TSM110NB04DCR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 34.26 грн |
| 5000+ | 31.42 грн |
| 12500+ | 29.97 грн |
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Технічний опис TSM110NB04DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 48W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V, Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.
Інші пропозиції TSM110NB04DCR RLG за ціною від 32.89 грн до 82.93 грн
| Фото | Назва | Виробник | Інформація |
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TSM110NB04DCR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A/48A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
на замовлення 14882 шт: термін постачання 21-31 дні (днів) |
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TSM110NB04DCR RLG | Виробник : Taiwan Semiconductor |
 MOSFET Dual N-Chan Pwr MOSFET 40V 48A 11mu |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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TSM110NB04DCR RLG | Виробник : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 10A 8-Pin PDFN EP T/R |
товар відсутній |
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| TSM110NB04DCR RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 9.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| TSM110NB04DCR RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 9.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced |
товар відсутній |