Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (63527) > Сторінка 1050 з 1059
| Фото | Назва | Виробник | Інформація |
Доступність |
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BZX55C3V3 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.3V; 5mA; reel,tape; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 1179 шт: термін постачання 21-30 дні (днів) |
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BZX55C5V6 R0 | TAIWAN SEMICONDUCTOR |
 Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1519 шт: термін постачання 21-30 дні (днів) |
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BZX55C5V6 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 446 шт: термін постачання 21-30 дні (днів) |
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BZX85C6V8 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 6.8V; 35mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 6.8V Zener current: 35mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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BZX85C8V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 8.2V; 25mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 8.2V Zener current: 25mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 586 шт: термін постачання 21-30 дні (днів) |
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BZX85C4V3 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 4.3V; 50mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 4.3V Zener current: 50mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA |
на замовлення 585 шт: термін постачання 21-30 дні (днів) |
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BZX85C5V6 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 5.6V; 45mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.6V Zener current: 45mA Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO41 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 722 шт: термін постачання 21-30 дні (днів) |
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SD103BW RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.35A; SOD123 Mounting: SMD Case: SOD123 Max. off-state voltage: 30V Max. forward voltage: 0.6V Load current: 0.35A Semiconductor structure: single diode Max. forward impulse current: 1.5A Type of diode: Schottky rectifying |
на замовлення 740 шт: термін постачання 21-30 дні (днів) |
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TSM2314CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23 Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 33mΩ Drain current: 4.9A Drain-source voltage: 20V Gate charge: 14nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Power dissipation: 0.8W |
на замовлення 499 шт: термін постачання 21-30 дні (днів) |
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P4SMA39CA M2G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 39V; 7.7A; bidirectional; ±5%; DO214AC; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 7.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
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| SS36FSH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Application: automotive industry |
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| SS36H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry |
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P6KE27CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 27V; 16.8A; bidirectional; ±5%; DO15; 600W; reel,tape Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 16.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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| SS26H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Application: automotive industry Kind of package: reel; tape Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode |
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| SS26L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; subSMA; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode |
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| SS26LWH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123W; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Application: automotive industry Kind of package: reel; tape Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode |
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| TS4448 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Reverse recovery time: 9ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 9pF Case: 0603 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.15W Kind of package: reel; tape |
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| TS4448 RWG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 1005; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Reverse recovery time: 9ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 9pF Case: 1005 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.2W Kind of package: reel; tape |
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| SS34ALH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; thinSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: thinSMA Kind of package: reel; tape Application: automotive industry |
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| SS34H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry |
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| SS34LW | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123W; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: SOD123W Kind of package: reel; tape |
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BZT52C4V3 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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P4SMA30A M2G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 30V; 10A; unidirectional; ±5%; SMA; reel,tape Max. off-state voltage: 25.6V Max. forward impulse current: 10A Case: SMA Kind of package: reel; tape Mounting: SMD Breakdown voltage: 30V Leakage current: 1µA Type of diode: TVS Peak pulse power dissipation: 0.4kW Tolerance: ±5% Semiconductor structure: unidirectional |
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| SMA4S30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 33.5÷37.1V; 8.2A; unidirectional; ±5%; SOD128 Max. off-state voltage: 30V Max. forward impulse current: 8.2A Case: SOD128 Kind of package: reel; tape Mounting: SMD Breakdown voltage: 33.5...37.1V Leakage current: 1µA Type of diode: TVS Peak pulse power dissipation: 0.4kW Tolerance: ±5% Semiconductor structure: unidirectional |
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MUR820 C0 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8A; tube; TO220AC; Ufmax: 0.975V; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 0.975V Reverse recovery time: 25ns |
на замовлення 314 шт: термін постачання 21-30 дні (днів) |
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| TSM220NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 22mΩ Drain current: 8A Drain-source voltage: 60V Gate charge: 23nC Case: PDFN56 Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 23W |
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| TSM220NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 22mΩ Drain current: 8A Drain-source voltage: 60V Gate charge: 23nC Case: PDFN56 Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 23W |
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MBR760 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; tube Mounting: THT Max. forward impulse current: 150A Max. off-state voltage: 60V Max. load current: 15A Max. forward voltage: 0.75V Load current: 7.5A Semiconductor structure: single diode Kind of package: tube Type of diode: Schottky rectifying Case: TO220AC |
на замовлення 448 шт: термін постачання 21-30 дні (днів) |
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1.5KE250CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 250V; 4.5A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Max. off-state voltage: 344V Breakdown voltage: 250V Max. forward impulse current: 4.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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P6SMB200A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
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| BZX85C4V7 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 4.7V; 45mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 4.7V Zener current: 45mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA |
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| SS24 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
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| SS24ALH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; thinSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: thinSMA Kind of package: reel; tape Application: automotive industry |
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| SS320H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMC; reel,tape Mounting: SMD Application: automotive industry Kind of package: reel; tape Case: SMC Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Type of diode: Schottky rectifying |
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| SS320LW | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 3A; SOD123W; reel,tape Mounting: SMD Kind of package: reel; tape Case: SOD123W Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Type of diode: Schottky rectifying |
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| SS320LWH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 3A; SOD123W; reel,tape Mounting: SMD Application: automotive industry Kind of package: reel; tape Case: SOD123W Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Type of diode: Schottky rectifying |
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MCR100-4 A1G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT thyristors Description: Thyristor; 200V; 0.8A; Igt: 0.2mA; TO92; THT; Ammo Pack; Ifsm: 10A Type of thyristor: thyristor Max. off-state voltage: 200V Load current: 0.8A Gate current: 0.2mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 10A Features of semiconductor devices: sensitive gate |
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P6SMB6.8A | TAIWAN SEMICONDUCTOR |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 60A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 2mA Kind of package: reel; tape |
на замовлення 2235 шт: термін постачання 21-30 дні (днів) |
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| TSM120N06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 14W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 36.5nC Kind of channel: enhanced |
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TSM120N06LCS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 37nC Kind of channel: enhanced |
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BZX84C10 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA |
на замовлення 981 шт: термін постачання 21-30 дні (днів) |
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BZX55C30 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 30V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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BZX55C4V7 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 348 шт: термін постачання 21-30 дні (днів) |
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BZX55C4V7 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 563 шт: термін постачання 21-30 дні (днів) |
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| SS210 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
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| SS210ALH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; thinSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: thinSMA Kind of package: reel; tape Application: automotive industry |
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| SS210H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Application: automotive industry |
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| SS210L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: subSMA Kind of package: reel; tape |
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| SS210LW | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123W; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SOD123W Kind of package: reel; tape |
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| SS210LWH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123W; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SOD123W Kind of package: reel; tape Application: automotive industry |
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TS2581CS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; Topology: buck; Ch: 1 Kind of package: reel; tape Type of integrated circuit: PMIC Number of channels: 1 Input voltage: 8...40V DC Integrated circuit features: PWM Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Operating temperature: -20...125°C Case: SOP8 Frequency: 0.1MHz |
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BYG21M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 120ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 13pF Case: SMA Max. forward voltage: 1.6V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| SS220LW | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 2A; SOD123W; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Case: SOD123W Kind of package: reel; tape |
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| TSM70N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of channel: enhanced |
товар відсутній |
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TSM70N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of channel: enhanced |
товар відсутній |
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| TSM70N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 12.6nC Kind of channel: enhanced |
товар відсутній |
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| TSM70N750CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Power dissipation: 62.5W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 10.7nC Kind of channel: enhanced |
товар відсутній |
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| TSM70N750CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 10.7nC Kind of channel: enhanced |
товар відсутній |
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| TSM70N900CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of channel: enhanced |
товар відсутній |
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TSM70N900CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of channel: enhanced |
товар відсутній |
| BZX55C3V3 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; 5mA; reel,tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; 5mA; reel,tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 1179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.38 грн |
| 32+ | 11.44 грн |
| 53+ | 6.95 грн |
| 100+ | 5.71 грн |
| 250+ | 3.9 грн |
| 401+ | 2.09 грн |
| 1102+ | 1.98 грн |
| BZX55C5V6 R0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1519 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 99+ | 3.95 грн |
| 137+ | 2.64 грн |
| 419+ | 2.01 грн |
| 1150+ | 1.9 грн |
| BZX55C5V6 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 446 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 17.94 грн |
| 33+ | 11.01 грн |
| 53+ | 6.95 грн |
| 100+ | 5.71 грн |
| 250+ | 4.45 грн |
| 402+ | 2.09 грн |
| BZX85C6V8 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Zener current: 35mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Zener current: 35mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.55 грн |
| 100+ | 4.32 грн |
| 250+ | 3.82 грн |
| 260+ | 3.27 грн |
| BZX85C8V2 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; 25mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 8.2V
Zener current: 25mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; 25mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 8.2V
Zener current: 25mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 586 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 61+ | 6.47 грн |
| 100+ | 5.42 грн |
| 203+ | 4.14 грн |
| 556+ | 3.92 грн |
| BZX85C4V3 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.3V; 50mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.3V
Zener current: 50mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.3V; 50mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.3V
Zener current: 50mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
на замовлення 585 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.55 грн |
| 100+ | 4.32 грн |
| 245+ | 3.27 грн |
| BZX85C5V6 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.6V; 45mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.6V
Zener current: 45mA
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.6V; 45mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.6V
Zener current: 45mA
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 722 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 61+ | 6.47 грн |
| 100+ | 5.42 грн |
| 204+ | 4.16 грн |
| 500+ | 4.15 грн |
| 559+ | 3.93 грн |
| SD103BW RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.35A; SOD123
Mounting: SMD
Case: SOD123
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward impulse current: 1.5A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.35A; SOD123
Mounting: SMD
Case: SOD123
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward impulse current: 1.5A
Type of diode: Schottky rectifying
на замовлення 740 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.23 грн |
| 110+ | 3.35 грн |
| 310+ | 2.71 грн |
| 500+ | 2.66 грн |
| TSM2314CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Power dissipation: 0.8W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Power dissipation: 0.8W
на замовлення 499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.47 грн |
| 12+ | 31.72 грн |
| 25+ | 24.04 грн |
| 45+ | 19.12 грн |
| 122+ | 18.1 грн |
| P4SMA39CA M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 39V; 7.7A; bidirectional; ±5%; DO214AC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 39V; 7.7A; bidirectional; ±5%; DO214AC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| SS36FSH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SS36H |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| P6KE27CA R0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 27V; 16.8A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 27V; 16.8A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.84 грн |
| SS26H |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
товар відсутній
| SS26L |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; subSMA; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; subSMA; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
товар відсутній
| SS26LWH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
товар відсутній
| TS4448 RGG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 9ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 9pF
Case: 0603
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.15W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 9ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 9pF
Case: 0603
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.15W
Kind of package: reel; tape
товар відсутній
| TS4448 RWG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 1005; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 9ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 9pF
Case: 1005
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 1005; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 9ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 9pF
Case: 1005
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.2W
Kind of package: reel; tape
товар відсутній
| SS34ALH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; thinSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; thinSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SS34H |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SS34LW |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
товар відсутній
| BZT52C4V3 RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.45 грн |
| 125+ | 3.01 грн |
| 250+ | 2.39 грн |
| 1000+ | 2.36 грн |
| P4SMA30A M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 30V; 10A; unidirectional; ±5%; SMA; reel,tape
Max. off-state voltage: 25.6V
Max. forward impulse current: 10A
Case: SMA
Kind of package: reel; tape
Mounting: SMD
Breakdown voltage: 30V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Semiconductor structure: unidirectional
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 30V; 10A; unidirectional; ±5%; SMA; reel,tape
Max. off-state voltage: 25.6V
Max. forward impulse current: 10A
Case: SMA
Kind of package: reel; tape
Mounting: SMD
Breakdown voltage: 30V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Semiconductor structure: unidirectional
товар відсутній
| SMA4S30AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 33.5÷37.1V; 8.2A; unidirectional; ±5%; SOD128
Max. off-state voltage: 30V
Max. forward impulse current: 8.2A
Case: SOD128
Kind of package: reel; tape
Mounting: SMD
Breakdown voltage: 33.5...37.1V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Semiconductor structure: unidirectional
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 33.5÷37.1V; 8.2A; unidirectional; ±5%; SOD128
Max. off-state voltage: 30V
Max. forward impulse current: 8.2A
Case: SOD128
Kind of package: reel; tape
Mounting: SMD
Breakdown voltage: 33.5...37.1V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Semiconductor structure: unidirectional
товар відсутній
| MUR820 C0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; TO220AC; Ufmax: 0.975V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; TO220AC; Ufmax: 0.975V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
на замовлення 314 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.37 грн |
| 7+ | 57.93 грн |
| 21+ | 40.26 грн |
| 58+ | 38.09 грн |
| TSM220NB06CR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 22mΩ
Drain current: 8A
Drain-source voltage: 60V
Gate charge: 23nC
Case: PDFN56
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 23W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 22mΩ
Drain current: 8A
Drain-source voltage: 60V
Gate charge: 23nC
Case: PDFN56
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 23W
товар відсутній
| TSM220NB06LCR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 22mΩ
Drain current: 8A
Drain-source voltage: 60V
Gate charge: 23nC
Case: PDFN56
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 23W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 22mΩ
Drain current: 8A
Drain-source voltage: 60V
Gate charge: 23nC
Case: PDFN56
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 23W
товар відсутній
| MBR760 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; tube
Mounting: THT
Max. forward impulse current: 150A
Max. off-state voltage: 60V
Max. load current: 15A
Max. forward voltage: 0.75V
Load current: 7.5A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO220AC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; tube
Mounting: THT
Max. forward impulse current: 150A
Max. off-state voltage: 60V
Max. load current: 15A
Max. forward voltage: 0.75V
Load current: 7.5A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO220AC
на замовлення 448 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.36 грн |
| 10+ | 45.62 грн |
| 25+ | 34.18 грн |
| 67+ | 32.3 грн |
| 1.5KE250CA R0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 250V; 4.5A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 344V
Breakdown voltage: 250V
Max. forward impulse current: 4.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 250V; 4.5A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 344V
Breakdown voltage: 250V
Max. forward impulse current: 4.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.97 грн |
| P6SMB200A M4G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| BZX85C4V7 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; 45mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Zener current: 45mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; 45mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Zener current: 45mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
товар відсутній
| SS24 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товар відсутній
| SS24ALH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; thinSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; thinSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SS320H |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMC; reel,tape
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SMC
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMC; reel,tape
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SMC
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Type of diode: Schottky rectifying
товар відсутній
| SS320LW |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SOD123W; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SOD123W
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SOD123W; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SOD123W
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товар відсутній
| SS320LWH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SOD123W; reel,tape
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SOD123W
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SOD123W; reel,tape
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SOD123W
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товар відсутній
| MCR100-4 A1G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT thyristors
Description: Thyristor; 200V; 0.8A; Igt: 0.2mA; TO92; THT; Ammo Pack; Ifsm: 10A
Type of thyristor: thyristor
Max. off-state voltage: 200V
Load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 10A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 200V; 0.8A; Igt: 0.2mA; TO92; THT; Ammo Pack; Ifsm: 10A
Type of thyristor: thyristor
Max. off-state voltage: 200V
Load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 10A
Features of semiconductor devices: sensitive gate
товар відсутній
| P6SMB6.8A | |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
на замовлення 2235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.26 грн |
| 35+ | 11.08 грн |
| 95+ | 8.91 грн |
| 260+ | 8.4 грн |
| TSM120N06LCR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of channel: enhanced
товар відсутній
| TSM120N06LCS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhanced
товар відсутній
| BZX84C10 RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 981 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.79 грн |
| 100+ | 3.9 грн |
| 305+ | 2.81 грн |
| 830+ | 2.66 грн |
| BZX55C30 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.68 грн |
| BZX55C4V7 R0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 348 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.92 грн |
| 137+ | 2.66 грн |
| BZX55C4V7 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 563 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.38 грн |
| 33+ | 11.01 грн |
| 53+ | 6.95 грн |
| 100+ | 5.71 грн |
| 250+ | 3.9 грн |
| 404+ | 2.09 грн |
| SS210 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товар відсутній
| SS210ALH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; thinSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; thinSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SS210H |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SS210L |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: subSMA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: subSMA
Kind of package: reel; tape
товар відсутній
| SS210LW |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
товар відсутній
| SS210LWH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| TS2581CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; Topology: buck; Ch: 1
Kind of package: reel; tape
Type of integrated circuit: PMIC
Number of channels: 1
Input voltage: 8...40V DC
Integrated circuit features: PWM
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -20...125°C
Case: SOP8
Frequency: 0.1MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; Topology: buck; Ch: 1
Kind of package: reel; tape
Type of integrated circuit: PMIC
Number of channels: 1
Input voltage: 8...40V DC
Integrated circuit features: PWM
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -20...125°C
Case: SOP8
Frequency: 0.1MHz
товар відсутній
| BYG21M |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38.99 грн |
| SS220LW |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 2A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 2A; SOD123W; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
товар відсутній
| TSM70N600CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of channel: enhanced
товар відсутній
| TSM70N600CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of channel: enhanced
товар відсутній
| TSM70N600CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of channel: enhanced
товар відсутній
| TSM70N750CH C5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of channel: enhanced
товар відсутній
| TSM70N750CP ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of channel: enhanced
товар відсутній
| TSM70N900CH C5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of channel: enhanced
товар відсутній
| TSM70N900CI C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of channel: enhanced
товар відсутній