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B0540W RHG B0540W RHG TAIWAN SEMICONDUCTOR B0540W-RHG.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Case: SOD123
Max. forward voltage: 0.62V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.41W
на замовлення 759 шт:
термін постачання 21-30 дні (днів)
46+8.88 грн
58+ 6.52 грн
100+ 5.87 грн
250+ 4.93 грн
254+ 3.44 грн
699+ 3.25 грн
Мінімальне замовлення: 46
TS5204CY50 RMG TS5204CY50 RMG TAIWAN SEMICONDUCTOR TS5204_M2003.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT89; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 80mA
Case: SOT89
Mounting: SMD
Manufacturer series: TS5204
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
товар відсутній
TSM480P06CP ROG TAIWAN SEMICONDUCTOR TSM480P06CP_B2209.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -13A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of channel: enhanced
товар відсутній
TSM680P06CP ROG TAIWAN SEMICONDUCTOR TSM680P06CP_A2204.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 20W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 20W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
товар відсутній
BZS55C5V1 RXG BZS55C5V1 RXG TAIWAN SEMICONDUCTOR BZS55C5V1-RXG.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
TSM650P02CX RFG TSM650P02CX RFG TAIWAN SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhanced
товар відсутній
TSM650P03CX RFG TSM650P03CX RFG TAIWAN SEMICONDUCTOR TSM650P03CX_B1811.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -2.6A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
8+54.07 грн
14+ 27.57 грн
25+ 19.33 грн
64+ 13.86 грн
Мінімальне замовлення: 8
TSM2328CX RFG TSM2328CX RFG TAIWAN SEMICONDUCTOR TSM2328_B14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.25Ω
Drain current: 1.5A
Drain-source voltage: 100V
Gate charge: 11.1nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 1.38W
товар відсутній
TSM320N03CX RFG TSM320N03CX RFG TAIWAN SEMICONDUCTOR TSM320N03CX_C1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Case: SOT23
Gate charge: 8.9nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±12V
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
8+53.26 грн
12+ 32.82 грн
25+ 24.88 грн
45+ 19.78 грн
122+ 18.73 грн
Мінімальне замовлення: 8
TS1117BCP33 ROG TS1117BCP33 ROG TAIWAN SEMICONDUCTOR TS1117B_H1607.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: TS1117B
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
9+50.03 грн
11+ 34.17 грн
25+ 30.72 грн
39+ 22.48 грн
Мінімальне замовлення: 9
RS1AL R2 RS1AL R2 TAIWAN SEMICONDUCTOR RS1AL-R2.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: subSMA
Kind of package: reel; tape
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 0.8A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Type of diode: switching
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
39+9.74 грн
Мінімальне замовлення: 39
TSM210N02CX RFG TSM210N02CX RFG TAIWAN SEMICONDUCTOR TSM210N02CX_B1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 4.2A
Drain-source voltage: 20V
Gate charge: 5.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±10V
Power dissipation: 1.56W
товар відсутній
TSM085P03CS RLG TSM085P03CS RLG TAIWAN SEMICONDUCTOR TSM085P03CS_A1703.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
товар відсутній
TSM089N08LCR RLG TAIWAN SEMICONDUCTOR TSM089N08LCR_A1608.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Case: PDFN56U
Mounting: SMD
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 17W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
SK84C V7G SK84C V7G TAIWAN SEMICONDUCTOR SK84C-V7G.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 8A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
на замовлення 492 шт:
термін постачання 21-30 дні (днів)
13+32.28 грн
15+ 26.75 грн
25+ 24.05 грн
39+ 22.25 грн
100+ 21.36 грн
108+ 21.06 грн
Мінімальне замовлення: 13
P6SMB15CA P6SMB15CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p6smb_datasheet.pdf.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
30+14.04 грн
35+ 12.14 грн
Мінімальне замовлення: 30
TSM4925DCS RLG TSM4925DCS RLG TAIWAN SEMICONDUCTOR TSM4925D_B15.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Power dissipation: 1.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
товар відсутній
P6KE8.2CA R0 P6KE8.2CA R0 TAIWAN SEMICONDUCTOR P6KE_SER.pdf Category: Bidirectional THT transil diodes
Description: Diode: TVS; 8.2V; 50A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO15
Semiconductor structure: bidirectional
Leakage current: 0.2mA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 50A
Breakdown voltage: 8.2V
Max. off-state voltage: 7.02V
товар відсутній
DBL104G C1 DBL104G C1 TAIWAN SEMICONDUCTOR DBL104G-C1.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1A; Ifsm: 40A; DBL; THT
Case: DBL
Max. off-state voltage: 0.4kV
Kind of package: tube
Load current: 1A
Max. forward impulse current: 40A
Electrical mounting: THT
Type of bridge rectifier: single-phase
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
20+21.79 грн
25+ 16.11 грн
55+ 16.04 грн
100+ 14.99 грн
150+ 14.91 грн
Мінімальне замовлення: 20
TSM126CX RFG TSM126CX RFG TAIWAN SEMICONDUCTOR TSM126_A14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 600V
Drain current: 24mA
On-state resistance: 800Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
товар відсутній
BZT52C9V1 RHG BZT52C9V1 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.45µA
на замовлення 2965 шт:
термін постачання 21-30 дні (днів)
90+4.6 грн
125+ 3.11 грн
250+ 2.47 грн
1000+ 2.41 грн
Мінімальне замовлення: 90
TSM033NB04CR RLG TAIWAN SEMICONDUCTOR TSM033NB04CR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
товар відсутній
TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
товар відсутній
TSM042N03CS RLG TSM042N03CS RLG TAIWAN SEMICONDUCTOR TSM042N03CS-RLG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOP8
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
7+59.31 грн
23+ 38.18 грн
Мінімальне замовлення: 7
TSM045NB06CR RLG TAIWAN SEMICONDUCTOR TSM045NB06CR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Mounting: SMD
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Case: PDFN56U
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 104nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 16A
товар відсутній
TSM048NB06LCR RLG TSM048NB06LCR RLG TAIWAN SEMICONDUCTOR TSM048NB06LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
3+164.62 грн
5+ 137.12 грн
9+ 109.4 грн
23+ 103.4 грн
Мінімальне замовлення: 3
TSM051N04LCP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhanced
товар відсутній
TSM05N03CW RPG TSM05N03CW RPG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM05N03CW Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
на замовлення 133 шт:
термін постачання 21-30 дні (днів)
7+62.94 грн
10+ 40.61 грн
25+ 30.72 грн
33+ 26.45 грн
91+ 24.95 грн
Мінімальне замовлення: 7
MMSZ5232B RHG MMSZ5232B RHG TAIWAN SEMICONDUCTOR MMSZ5221B series_H2007.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 5670 шт:
термін постачання 21-30 дні (днів)
75+5.49 грн
100+ 4.7 грн
225+ 3.94 грн
610+ 3.72 грн
3000+ 3.57 грн
Мінімальне замовлення: 75
P4SMA27A M2G P4SMA27A M2G TAIWAN SEMICONDUCTOR P4SMA15A-M2G.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; DO214AC; reel,tape
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO214AC
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 27V
Max. forward impulse current: 11A
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
22+18.72 грн
32+ 11.84 грн
100+ 10.42 грн
102+ 8.55 грн
Мінімальне замовлення: 22
1.5SMC36CA V6G 1.5SMC36CA V6G TAIWAN SEMICONDUCTOR 1.5SMC33A-R6.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
15+27.68 грн
17+ 23.08 грн
25+ 20.46 грн
Мінімальне замовлення: 15
1PGSMB5926 1PGSMB5926 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; 136mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Zener current: 136mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
15+28.24 грн
20+ 18.73 грн
25+ 17.46 грн
Мінімальне замовлення: 15
P6SMB43A M4G P6SMB43A M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.6A
Breakdown voltage: 43V
товар відсутній
TLD6S33AH TAIWAN SEMICONDUCTOR TLD6S10AH SERIES_D2103.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 36.7÷40.6V; 86A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 86A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
TLD6S43AH TAIWAN SEMICONDUCTOR pdf.php?pn=TLD6S43AH Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 47.8÷52.8V; 66A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
TSM2305CX RFG TSM2305CX RFG TAIWAN SEMICONDUCTOR TSM2305_E15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 55mΩ
Drain current: -1A
Drain-source voltage: -20V
Gate charge: 20nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Power dissipation: 0.8W
товар відсутній
TSM2306CX RFG TSM2306CX RFG TAIWAN SEMICONDUCTOR TSM2306_B15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 57mΩ
Drain current: 3.5A
Drain-source voltage: 30V
Gate charge: 7nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 0.8W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
11+37.93 грн
17+ 22.18 грн
Мінімальне замовлення: 11
TSM2307CX RFG TSM2307CX RFG TAIWAN SEMICONDUCTOR TSM2307CX_D15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 95mΩ
Drain current: -3A
Drain-source voltage: -30V
Gate charge: 15nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 0.8W
товар відсутній
TSM2308CX RFG TSM2308CX RFG TAIWAN SEMICONDUCTOR TSM2308_C15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 156mΩ
Drain current: 3A
Drain-source voltage: 60V
Gate charge: 3.99nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 0.8W
товар відсутній
TSM2312CX RFG TSM2312CX RFG TAIWAN SEMICONDUCTOR TSM2312_E15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Power dissipation: 0.48W
товар відсутній
TSM2318CX RFG TSM2318CX RFG TAIWAN SEMICONDUCTOR TSM2318_C15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 3.9A
Drain-source voltage: 40V
Gate charge: 10nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 1.25W
товар відсутній
TSM280NB06LCR RLG TAIWAN SEMICONDUCTOR TSM280NB06LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
товар відсутній
TSM2NB60CP ROG TAIWAN SEMICONDUCTOR TSM2NB60CP_A2208.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of channel: enhanced
товар відсутній
MBRF30100CT C0 MBRF30100CT C0 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.94V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.94V
Max. forward impulse current: 200A
Kind of package: tube
товар відсутній
TSM60NB900CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 36.8W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.6nC
Kind of channel: enhanced
товар відсутній
TSM60NB900CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 36.8W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of channel: enhanced
товар відсутній
BZX84C6V2 RFG BZX84C6V2 RFG TAIWAN SEMICONDUCTOR BZX84C2V4 SERIES_F2001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
на замовлення 950 шт:
термін постачання 21-30 дні (днів)
60+7.02 грн
100+ 4.04 грн
305+ 2.89 грн
830+ 2.73 грн
Мінімальне замовлення: 60
BZV55B4V7 L1G BZV55B4V7 L1G TAIWAN SEMICONDUCTOR BZV55B2V4%20SERIES_G2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 1390 шт:
термін постачання 21-30 дні (днів)
75+5.41 грн
110+ 3.47 грн
355+ 2.47 грн
975+ 2.34 грн
Мінімальне замовлення: 75
BZX55C9V1 R0G BZX55C9V1 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 745 шт:
термін постачання 21-30 дні (днів)
115+3.55 грн
140+ 2.72 грн
405+ 2.17 грн
Мінімальне замовлення: 115
TS3480CX50 RFG TS3480CX50 RFG TAIWAN SEMICONDUCTOR TS3480_D1810.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 5V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6.5...30V
Manufacturer series: TS3480
товар відсутній
TS5204CX50 RFG TS5204CX50 RFG TAIWAN SEMICONDUCTOR TS5204_M2003.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23; SMD; ±4%
Operating temperature: -40...125°C
Case: SOT23
Mounting: SMD
Input voltage: 2.5...16V
Manufacturer series: TS5204
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±4%
Output voltage: 5V
Output current: 80mA
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
9+46.8 грн
10+ 40.61 грн
25+ 24.88 грн
47+ 18.88 грн
Мінімальне замовлення: 9
TS3480CX33 RFG TS3480CX33 RFG TAIWAN SEMICONDUCTOR TS3480_D1810.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Tolerance: ±2%
Mounting: SMD
Output current: 0.1A
Case: SOT23
Operating temperature: -40...125°C
Input voltage: 4.8...30V
Manufacturer series: TS3480
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Number of channels: 1
товар відсутній
TS5204CX33 RFG TS5204CX33 RFG TAIWAN SEMICONDUCTOR TS5204_M2003.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23; SMD
Operating temperature: -40...125°C
Case: SOT23
Mounting: SMD
Input voltage: 2.5...16V
Manufacturer series: TS5204
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±4%
Output voltage: 3.3V
Output current: 80mA
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
на замовлення 151 шт:
термін постачання 21-30 дні (днів)
9+48.42 грн
40+ 21.95 грн
110+ 20.76 грн
Мінімальне замовлення: 9
TSD30H120CW MNG TAIWAN SEMICONDUCTOR TSD30H100CW%20SERIES_C15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 30A; D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 200A
Max. forward voltage: 0.84V
товар відсутній
TSD30H150CW MNG TAIWAN SEMICONDUCTOR TSD30H100CW%20SERIES_C15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 30A; D2PAK
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Load current: 30A
Max. forward voltage: 0.9V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
товар відсутній
1PGSMB5929 1PGSMB5929 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; 100mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Zener current: 100mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
15+28.24 грн
20+ 18.73 грн
25+ 17.68 грн
100+ 17.61 грн
Мінімальне замовлення: 15
1PGSMB5927 1PGSMB5927 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Tolerance: ±5%
Zener current: 125mA
Zener voltage: 12V
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
8+56.81 грн
11+ 37.17 грн
25+ 28.1 грн
Мінімальне замовлення: 8
1PGSMB5928 1PGSMB5928 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; 115mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Tolerance: ±5%
Zener current: 115mA
Zener voltage: 13V
на замовлення 185 шт:
термін постачання 21-30 дні (днів)
8+56.81 грн
11+ 37.17 грн
25+ 28.1 грн
41+ 21.25 грн
112+ 20.09 грн
Мінімальне замовлення: 8
1PGSMB5930 1PGSMB5930 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; 94mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Zener current: 94mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
8+56.81 грн
11+ 37.17 грн
25+ 28.1 грн
Мінімальне замовлення: 8
1PGSMB5931 1PGSMB5931 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; 83mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Zener current: 83mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
15+28.24 грн
20+ 18.73 грн
25+ 17.76 грн
Мінімальне замовлення: 15
B0540W RHG B0540W-RHG.pdf
B0540W RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Case: SOD123
Max. forward voltage: 0.62V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.41W
на замовлення 759 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
46+8.88 грн
58+ 6.52 грн
100+ 5.87 грн
250+ 4.93 грн
254+ 3.44 грн
699+ 3.25 грн
Мінімальне замовлення: 46
TS5204CY50 RMG TS5204_M2003.pdf
TS5204CY50 RMG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT89; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 80mA
Case: SOT89
Mounting: SMD
Manufacturer series: TS5204
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
товар відсутній
TSM480P06CP ROG TSM480P06CP_B2209.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -13A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of channel: enhanced
товар відсутній
TSM680P06CP ROG TSM680P06CP_A2204.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 20W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 20W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
товар відсутній
BZS55C5V1 RXG BZS55C5V1-RXG.pdf
BZS55C5V1 RXG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
TSM650P02CX RFG
TSM650P02CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhanced
товар відсутній
TSM650P03CX RFG TSM650P03CX_B1811.pdf
TSM650P03CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -2.6A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+54.07 грн
14+ 27.57 грн
25+ 19.33 грн
64+ 13.86 грн
Мінімальне замовлення: 8
TSM2328CX RFG TSM2328_B14.pdf
TSM2328CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.25Ω
Drain current: 1.5A
Drain-source voltage: 100V
Gate charge: 11.1nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 1.38W
товар відсутній
TSM320N03CX RFG TSM320N03CX_C1811.pdf
TSM320N03CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Case: SOT23
Gate charge: 8.9nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±12V
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+53.26 грн
12+ 32.82 грн
25+ 24.88 грн
45+ 19.78 грн
122+ 18.73 грн
Мінімальне замовлення: 8
TS1117BCP33 ROG TS1117B_H1607.pdf
TS1117BCP33 ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: TS1117B
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
9+50.03 грн
11+ 34.17 грн
25+ 30.72 грн
39+ 22.48 грн
Мінімальне замовлення: 9
RS1AL R2 RS1AL-R2.pdf
RS1AL R2
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: subSMA
Kind of package: reel; tape
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 0.8A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Type of diode: switching
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
39+9.74 грн
Мінімальне замовлення: 39
TSM210N02CX RFG TSM210N02CX_B1811.pdf
TSM210N02CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 4.2A
Drain-source voltage: 20V
Gate charge: 5.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±10V
Power dissipation: 1.56W
товар відсутній
TSM085P03CS RLG TSM085P03CS_A1703.pdf
TSM085P03CS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
товар відсутній
TSM089N08LCR RLG TSM089N08LCR_A1608.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Case: PDFN56U
Mounting: SMD
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 17W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
SK84C V7G SK84C-V7G.pdf
SK84C V7G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 8A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
на замовлення 492 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
13+32.28 грн
15+ 26.75 грн
25+ 24.05 грн
39+ 22.25 грн
100+ 21.36 грн
108+ 21.06 грн
Мінімальне замовлення: 13
P6SMB15CA littelfuse_tvs_diode_p6smb_datasheet.pdf.pdf
P6SMB15CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
30+14.04 грн
35+ 12.14 грн
Мінімальне замовлення: 30
TSM4925DCS RLG TSM4925D_B15.pdf
TSM4925DCS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Power dissipation: 1.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
товар відсутній
P6KE8.2CA R0 P6KE_SER.pdf
P6KE8.2CA R0
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 8.2V; 50A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO15
Semiconductor structure: bidirectional
Leakage current: 0.2mA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 50A
Breakdown voltage: 8.2V
Max. off-state voltage: 7.02V
товар відсутній
DBL104G C1 DBL104G-C1.pdf
DBL104G C1
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1A; Ifsm: 40A; DBL; THT
Case: DBL
Max. off-state voltage: 0.4kV
Kind of package: tube
Load current: 1A
Max. forward impulse current: 40A
Electrical mounting: THT
Type of bridge rectifier: single-phase
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
20+21.79 грн
25+ 16.11 грн
55+ 16.04 грн
100+ 14.99 грн
150+ 14.91 грн
Мінімальне замовлення: 20
TSM126CX RFG TSM126_A14.pdf
TSM126CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 600V
Drain current: 24mA
On-state resistance: 800Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
товар відсутній
BZT52C9V1 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C9V1 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.45µA
на замовлення 2965 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
90+4.6 грн
125+ 3.11 грн
250+ 2.47 грн
1000+ 2.41 грн
Мінімальне замовлення: 90
TSM033NB04CR RLG TSM033NB04CR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
товар відсутній
TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
товар відсутній
TSM042N03CS RLG TSM042N03CS-RLG.pdf
TSM042N03CS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOP8
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+59.31 грн
23+ 38.18 грн
Мінімальне замовлення: 7
TSM045NB06CR RLG TSM045NB06CR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Mounting: SMD
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Case: PDFN56U
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 104nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 16A
товар відсутній
TSM048NB06LCR RLG TSM048NB06LCR_B1804.pdf
TSM048NB06LCR RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+164.62 грн
5+ 137.12 грн
9+ 109.4 грн
23+ 103.4 грн
Мінімальне замовлення: 3
TSM051N04LCP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhanced
товар відсутній
TSM05N03CW RPG pdf.php?pn=TSM05N03CW
TSM05N03CW RPG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
на замовлення 133 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+62.94 грн
10+ 40.61 грн
25+ 30.72 грн
33+ 26.45 грн
91+ 24.95 грн
Мінімальне замовлення: 7
MMSZ5232B RHG MMSZ5221B series_H2007.pdf
MMSZ5232B RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 5670 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.49 грн
100+ 4.7 грн
225+ 3.94 грн
610+ 3.72 грн
3000+ 3.57 грн
Мінімальне замовлення: 75
P4SMA27A M2G P4SMA15A-M2G.pdf
P4SMA27A M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; DO214AC; reel,tape
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO214AC
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 27V
Max. forward impulse current: 11A
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
22+18.72 грн
32+ 11.84 грн
100+ 10.42 грн
102+ 8.55 грн
Мінімальне замовлення: 22
1.5SMC36CA V6G 1.5SMC33A-R6.pdf
1.5SMC36CA V6G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+27.68 грн
17+ 23.08 грн
25+ 20.46 грн
Мінімальне замовлення: 15
1PGSMB5926
1PGSMB5926
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; 136mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Zener current: 136mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+28.24 грн
20+ 18.73 грн
25+ 17.46 грн
Мінімальне замовлення: 15
P6SMB43A M4G P6SMB_ser.pdf
P6SMB43A M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.6A
Breakdown voltage: 43V
товар відсутній
TLD6S33AH TLD6S10AH SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 36.7÷40.6V; 86A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 86A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
TLD6S43AH pdf.php?pn=TLD6S43AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 47.8÷52.8V; 66A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
TSM2305CX RFG TSM2305_E15.pdf
TSM2305CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 55mΩ
Drain current: -1A
Drain-source voltage: -20V
Gate charge: 20nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Power dissipation: 0.8W
товар відсутній
TSM2306CX RFG TSM2306_B15.pdf
TSM2306CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 57mΩ
Drain current: 3.5A
Drain-source voltage: 30V
Gate charge: 7nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 0.8W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
11+37.93 грн
17+ 22.18 грн
Мінімальне замовлення: 11
TSM2307CX RFG TSM2307CX_D15.pdf
TSM2307CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 95mΩ
Drain current: -3A
Drain-source voltage: -30V
Gate charge: 15nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 0.8W
товар відсутній
TSM2308CX RFG TSM2308_C15.pdf
TSM2308CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 156mΩ
Drain current: 3A
Drain-source voltage: 60V
Gate charge: 3.99nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 0.8W
товар відсутній
TSM2312CX RFG TSM2312_E15.pdf
TSM2312CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Power dissipation: 0.48W
товар відсутній
TSM2318CX RFG TSM2318_C15.pdf
TSM2318CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 3.9A
Drain-source voltage: 40V
Gate charge: 10nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 1.25W
товар відсутній
TSM280NB06LCR RLG TSM280NB06LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
товар відсутній
TSM2NB60CP ROG TSM2NB60CP_A2208.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of channel: enhanced
товар відсутній
MBRF30100CT C0
MBRF30100CT C0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.94V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.94V
Max. forward impulse current: 200A
Kind of package: tube
товар відсутній
TSM60NB900CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 36.8W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.6nC
Kind of channel: enhanced
товар відсутній
TSM60NB900CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 36.8W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of channel: enhanced
товар відсутній
BZX84C6V2 RFG BZX84C2V4 SERIES_F2001.pdf
BZX84C6V2 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
на замовлення 950 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
60+7.02 грн
100+ 4.04 грн
305+ 2.89 грн
830+ 2.73 грн
Мінімальне замовлення: 60
BZV55B4V7 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B4V7 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 1390 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.41 грн
110+ 3.47 грн
355+ 2.47 грн
975+ 2.34 грн
Мінімальне замовлення: 75
BZX55C9V1 R0G
BZX55C9V1 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 745 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
115+3.55 грн
140+ 2.72 грн
405+ 2.17 грн
Мінімальне замовлення: 115
TS3480CX50 RFG TS3480_D1810.pdf
TS3480CX50 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 5V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6.5...30V
Manufacturer series: TS3480
товар відсутній
TS5204CX50 RFG TS5204_M2003.pdf
TS5204CX50 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23; SMD; ±4%
Operating temperature: -40...125°C
Case: SOT23
Mounting: SMD
Input voltage: 2.5...16V
Manufacturer series: TS5204
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±4%
Output voltage: 5V
Output current: 80mA
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
9+46.8 грн
10+ 40.61 грн
25+ 24.88 грн
47+ 18.88 грн
Мінімальне замовлення: 9
TS3480CX33 RFG TS3480_D1810.pdf
TS3480CX33 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Tolerance: ±2%
Mounting: SMD
Output current: 0.1A
Case: SOT23
Operating temperature: -40...125°C
Input voltage: 4.8...30V
Manufacturer series: TS3480
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Number of channels: 1
товар відсутній
TS5204CX33 RFG TS5204_M2003.pdf
TS5204CX33 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23; SMD
Operating temperature: -40...125°C
Case: SOT23
Mounting: SMD
Input voltage: 2.5...16V
Manufacturer series: TS5204
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±4%
Output voltage: 3.3V
Output current: 80mA
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
на замовлення 151 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
9+48.42 грн
40+ 21.95 грн
110+ 20.76 грн
Мінімальне замовлення: 9
TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 30A; D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 200A
Max. forward voltage: 0.84V
товар відсутній
TSD30H150CW MNG TSD30H100CW%20SERIES_C15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 30A; D2PAK
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Load current: 30A
Max. forward voltage: 0.9V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
товар відсутній
1PGSMB5929
1PGSMB5929
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; 100mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Zener current: 100mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+28.24 грн
20+ 18.73 грн
25+ 17.68 грн
100+ 17.61 грн
Мінімальне замовлення: 15
1PGSMB5927
1PGSMB5927
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Tolerance: ±5%
Zener current: 125mA
Zener voltage: 12V
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+56.81 грн
11+ 37.17 грн
25+ 28.1 грн
Мінімальне замовлення: 8
1PGSMB5928
1PGSMB5928
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; 115mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Tolerance: ±5%
Zener current: 115mA
Zener voltage: 13V
на замовлення 185 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+56.81 грн
11+ 37.17 грн
25+ 28.1 грн
41+ 21.25 грн
112+ 20.09 грн
Мінімальне замовлення: 8
1PGSMB5930
1PGSMB5930
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; 94mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Zener current: 94mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+56.81 грн
11+ 37.17 грн
25+ 28.1 грн
Мінімальне замовлення: 8
1PGSMB5931
1PGSMB5931
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; 83mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Zener current: 83mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+28.24 грн
20+ 18.73 грн
25+ 17.76 грн
Мінімальне замовлення: 15
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