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TSZU52C13 RGG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; 5mA; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 0603
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
ABS2 RGG ABS2 RGG TAIWAN SEMICONDUCTOR ABS10-REG.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 30A; ABS; SMT
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 30A
Case: ABS
Kind of package: reel; tape
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
S1M M2G S1M M2G TAIWAN SEMICONDUCTOR S1D-M2G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
14+26.98 грн
Мінімальне замовлення: 14
TSM1NB60CH C5G TAIWAN SEMICONDUCTOR TSM1NB60CH_A2308.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
TSM1NB60CP ROG TSM1NB60CP ROG TAIWAN SEMICONDUCTOR TSM1NB60CP_A2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 600V
Drain current: 0.7A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 39W
товар відсутній
TSM1NB60CW RPG TAIWAN SEMICONDUCTOR TSM1NB60CW_A2206.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
TS2596CM533 RNG TAIWAN SEMICONDUCTOR TS2596_G1608.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
товар відсутній
BZT52B10-G RHG BZT52B10-G RHG TAIWAN SEMICONDUCTOR pdf.php?pn=BZT52B10-G Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 10V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 815 шт:
термін постачання 21-30 дні (днів)
40+10.81 грн
70+ 5.54 грн
100+ 4.41 грн
220+ 4.02 грн
500+ 3.96 грн
600+ 3.8 грн
Мінімальне замовлення: 40
BZT52B12-G RHG BZT52B12-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G%20SERIES_F1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)
40+10.81 грн
70+ 5.54 грн
100+ 4.41 грн
210+ 4.24 грн
500+ 3.96 грн
Мінімальне замовлення: 40
BZT52B12S RRG BZT52B12S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S%20series_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 90nA
товар відсутній
BZT52B13-G RHG BZT52B13-G RHG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5895 шт:
термін постачання 21-30 дні (днів)
40+11.38 грн
65+ 5.84 грн
100+ 4.65 грн
210+ 4.2 грн
500+ 4.17 грн
570+ 3.96 грн
3000+ 3.89 грн
Мінімальне замовлення: 40
BZT52B15-G RHG BZT52B15-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 610 шт:
термін постачання 21-30 дні (днів)
35+11.62 грн
65+ 5.99 грн
100+ 4.77 грн
190+ 4.69 грн
500+ 4.29 грн
Мінімальне замовлення: 35
BZT52B15S RRG BZT52B15S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S SERIES_H2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
товар відсутній
BZT52B20-G RHG BZT52B20-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G%20SERIES_F1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5285 шт:
термін постачання 21-30 дні (днів)
40+11.38 грн
65+ 5.84 грн
100+ 4.65 грн
210+ 4.14 грн
570+ 3.92 грн
3000+ 3.89 грн
Мінімальне замовлення: 40
BZT52B24-G RHG BZT52B24-G RHG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 24V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5640 шт:
термін постачання 21-30 дні (днів)
40+11.38 грн
65+ 5.84 грн
100+ 4.65 грн
210+ 4.14 грн
570+ 3.92 грн
3000+ 3.89 грн
Мінімальне замовлення: 40
P6SMB18A R5G P6SMB18A R5G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB18A M4G P6SMB18A M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZX84C7V5 RFG BZX84C7V5 RFG TAIWAN SEMICONDUCTOR BZX84C2V4 SERIES_F2001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 975 шт:
термін постачання 21-30 дні (днів)
60+7.02 грн
100+ 4.04 грн
305+ 2.9 грн
840+ 2.73 грн
Мінімальне замовлення: 60
SS25 TAIWAN SEMICONDUCTOR ss29-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товар відсутній
P6SMB62CA M4G P6SMB62CA M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB62CA R5G P6SMB62CA R5G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB62CAHM4G P6SMB62CAHM4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P4SMA36A M2G P4SMA36A M2G TAIWAN SEMICONDUCTOR P4SMA15A-M2G.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; DO214AC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
GBU606 GBU606 TAIWAN SEMICONDUCTOR GBU601 SERIES_N2103.pdf ds21226.pdf GBU6005-GBU610%20N1791%20REV.A.pdf GBU6005-GBU610.pdf GBU0606000L660.pdf 52-GBU6005-GBU610(GBU).pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
5+81.5 грн
6+ 68.19 грн
Мінімальне замовлення: 5
YBS2206G RAG TAIWAN SEMICONDUCTOR YBS220xG.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2.2A; Ifsm: 90A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
TSM160P02CS RLG TSM160P02CS RLG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM160P02CS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
товар відсутній
BZT52C3V9 RHG BZT52C3V9 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 740 шт:
термін постачання 21-30 дні (днів)
90+4.6 грн
125+ 3.11 грн
250+ 2.55 грн
315+ 2.54 грн
Мінімальне замовлення: 90
TS4264CW50 RPG TS4264CW50 RPG TAIWAN SEMICONDUCTOR TS4264_D15.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...45V
товар відсутній
TS4264GCW50 RPG TS4264GCW50 RPG TAIWAN SEMICONDUCTOR TS4264G_C15.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 5.5...45V
товар відсутній
BZV55B3V0 L1G BZV55B3V0 L1G TAIWAN SEMICONDUCTOR BZV55B2V4%20SERIES_G2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; MiniMELF glass; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 4µA
на замовлення 740 шт:
термін постачання 21-30 дні (днів)
75+5.41 грн
110+ 3.47 грн
330+ 2.65 грн
Мінімальне замовлення: 75
BZV55B3V6 L1G BZV55B3V6 L1G TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
75+5.41 грн
Мінімальне замовлення: 75
TSC966CW RPG TAIWAN SEMICONDUCTOR TSC966_F1801.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: SOT223
Pulsed collector current: 1A
Current gain: 90...300
Mounting: SMD
Kind of package: reel; tape
товар відсутній
TSM650N15CR RLG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
товар відсутній
TSM650N15CS RLG TSM650N15CS RLG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOP8
товар відсутній
P4SMA18A M2G P4SMA18A M2G TAIWAN SEMICONDUCTOR P4SMA15A-M2G.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; unidirectional; ±5%; DO214AC
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
LL4006G L0G LL4006G L0G TAIWAN SEMICONDUCTOR LL4001G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward impulse current: 30A
Kind of package: reel; tape
товар відсутній
BZS55C4V7 RXG BZS55C4V7 RXG TAIWAN SEMICONDUCTOR BZS55C2V4%20SERIES_D1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
55+7.26 грн
Мінімальне замовлення: 55
BZT52C4V7 RH BZT52C4V7 RH TAIWAN SEMICONDUCTOR BZT52C5V6-RH.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
36+11.3 грн
51+ 7.42 грн
73+ 5.19 грн
102+ 3.7 грн
250+ 2.59 грн
Мінімальне замовлення: 36
BZT52C4V7 RHG BZT52C4V7 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 880 шт:
термін постачання 21-30 дні (днів)
90+4.6 грн
125+ 3.11 грн
250+ 2.53 грн
Мінімальне замовлення: 90
BZT52C4V7S R9G BZT52C4V7S R9G TAIWAN SEMICONDUCTOR BZT52C2V4S SERIES_J2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 3460 шт:
термін постачання 21-30 дні (днів)
75+5.41 грн
100+ 4.56 грн
230+ 3.84 грн
625+ 3.63 грн
Мінімальне замовлення: 75
MBR2060CT MBR2060CT TAIWAN SEMICONDUCTOR MBR2035CT-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
5+85.54 грн
8+ 53.35 грн
21+ 42.86 грн
57+ 40.54 грн
Мінімальне замовлення: 5
P6SMB120A M4G P6SMB120A M4G TAIWAN SEMICONDUCTOR P6SMB_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B3V9S RRG BZT52B3V9S RRG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
товар відсутній
S1J M2G S1J M2G TAIWAN SEMICONDUCTOR S1D-M2G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
товар відсутній
P6SMB22A M4G P6SMB22A M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 20A
Breakdown voltage: 22V
товар відсутній
P6SMB22A R5G P6SMB22A R5G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 20A
Breakdown voltage: 22V
товар відсутній
TESDU12V RGG TESDU12V RGG TAIWAN SEMICONDUCTOR TESDU5V0 SERIES_H1601.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 25W; 13V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 25W
Max. off-state voltage: 12V
Breakdown voltage: 13V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
40+11.46 грн
45+ 9.14 грн
100+ 8.09 грн
115+ 7.87 грн
310+ 7.42 грн
Мінімальне замовлення: 40
P6SMB11CA M4G P6SMB11CA M4G TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Leakage current: 2µA
Max. forward impulse current: 40A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB11CA R5G P6SMB11CA R5G TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Leakage current: 2µA
Max. forward impulse current: 40A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB11CAHM4G P6SMB11CAHM4G TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Leakage current: 2µA
Max. forward impulse current: 40A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB10A R4 P6SMB10A R4 TAIWAN SEMICONDUCTOR P6SMB_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
P6SMB200A R4 P6SMB200A R4 TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B2V7S RRG BZT52B2V7S RRG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 18µA
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
75+5.41 грн
105+ 3.66 грн
250+ 2.91 грн
315+ 2.77 грн
865+ 2.62 грн
Мінімальне замовлення: 75
BZT52B3V0S RRG BZT52B3V0S RRG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 9µA
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
75+5.41 грн
Мінімальне замовлення: 75
P6SMB39A P6SMB39A TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
TSC2411CX RFG TSC2411CX RFG TAIWAN SEMICONDUCTOR Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23-3
Current gain: 82...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
B0530WS RRG B0530WS RRG TAIWAN SEMICONDUCTOR B0530WS-RRG.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD323F; reel,tape
Case: SOD323F
Capacitance: 160pF
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
89+4.56 грн
100+ 3.82 грн
300+ 2.92 грн
823+ 2.76 грн
Мінімальне замовлення: 89
BZV55B5V6 L1G BZV55B5V6 L1G TAIWAN SEMICONDUCTOR BZV55B2V4%20SERIES_G2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1425 шт:
термін постачання 21-30 дні (днів)
75+5.41 грн
110+ 3.47 грн
355+ 2.49 грн
975+ 2.35 грн
Мінімальне замовлення: 75
TQM025NB04CR RLG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhanced
товар відсутній
P6SMB15A R4 P6SMB15A R4 TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
TSZU52C13 RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; 5mA; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 0603
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
ABS2 RGG ABS10-REG.pdf
ABS2 RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 30A; ABS; SMT
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 30A
Case: ABS
Kind of package: reel; tape
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
S1M M2G S1D-M2G.pdf
S1M M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
14+26.98 грн
Мінімальне замовлення: 14
TSM1NB60CH C5G TSM1NB60CH_A2308.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
TSM1NB60CP ROG TSM1NB60CP_A2309.pdf
TSM1NB60CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 600V
Drain current: 0.7A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 39W
товар відсутній
TSM1NB60CW RPG TSM1NB60CW_A2206.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
TS2596CM533 RNG TS2596_G1608.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
товар відсутній
BZT52B10-G RHG pdf.php?pn=BZT52B10-G
BZT52B10-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 10V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 815 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+10.81 грн
70+ 5.54 грн
100+ 4.41 грн
220+ 4.02 грн
500+ 3.96 грн
600+ 3.8 грн
Мінімальне замовлення: 40
BZT52B12-G RHG BZT52B2V4-G%20SERIES_F1612.pdf
BZT52B12-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+10.81 грн
70+ 5.54 грн
100+ 4.41 грн
210+ 4.24 грн
500+ 3.96 грн
Мінімальне замовлення: 40
BZT52B12S RRG BZT52B2V4S%20series_G1804.pdf
BZT52B12S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 90nA
товар відсутній
BZT52B13-G RHG
BZT52B13-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5895 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+11.38 грн
65+ 5.84 грн
100+ 4.65 грн
210+ 4.2 грн
500+ 4.17 грн
570+ 3.96 грн
3000+ 3.89 грн
Мінімальне замовлення: 40
BZT52B15-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B15-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 610 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
35+11.62 грн
65+ 5.99 грн
100+ 4.77 грн
190+ 4.69 грн
500+ 4.29 грн
Мінімальне замовлення: 35
BZT52B15S RRG BZT52B2V4S SERIES_H2212.pdf
BZT52B15S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
товар відсутній
BZT52B20-G RHG BZT52B2V4-G%20SERIES_F1612.pdf
BZT52B20-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+11.38 грн
65+ 5.84 грн
100+ 4.65 грн
210+ 4.14 грн
570+ 3.92 грн
3000+ 3.89 грн
Мінімальне замовлення: 40
BZT52B24-G RHG
BZT52B24-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 24V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5640 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+11.38 грн
65+ 5.84 грн
100+ 4.65 грн
210+ 4.14 грн
570+ 3.92 грн
3000+ 3.89 грн
Мінімальне замовлення: 40
P6SMB18A R5G P6SMB_ser.pdf
P6SMB18A R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB18A M4G P6SMB_ser.pdf
P6SMB18A M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZX84C7V5 RFG BZX84C2V4 SERIES_F2001.pdf
BZX84C7V5 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 975 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
60+7.02 грн
100+ 4.04 грн
305+ 2.9 грн
840+ 2.73 грн
Мінімальне замовлення: 60
SS25 ss29-d.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товар відсутній
P6SMB62CA M4G P6SMB_ser.pdf
P6SMB62CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB62CA R5G P6SMB_ser.pdf
P6SMB62CA R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB62CAHM4G P6SMB_ser.pdf
P6SMB62CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P4SMA36A M2G P4SMA15A-M2G.pdf
P4SMA36A M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; DO214AC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
GBU606 GBU601 SERIES_N2103.pdf ds21226.pdf GBU6005-GBU610%20N1791%20REV.A.pdf GBU6005-GBU610.pdf GBU0606000L660.pdf 52-GBU6005-GBU610(GBU).pdf
GBU606
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+81.5 грн
6+ 68.19 грн
Мінімальне замовлення: 5
YBS2206G RAG YBS220xG.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2.2A; Ifsm: 90A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
TSM160P02CS RLG pdf.php?pn=TSM160P02CS
TSM160P02CS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
товар відсутній
BZT52C3V9 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V9 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 740 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
90+4.6 грн
125+ 3.11 грн
250+ 2.55 грн
315+ 2.54 грн
Мінімальне замовлення: 90
TS4264CW50 RPG TS4264_D15.pdf
TS4264CW50 RPG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...45V
товар відсутній
TS4264GCW50 RPG TS4264G_C15.pdf
TS4264GCW50 RPG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 5.5...45V
товар відсутній
BZV55B3V0 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B3V0 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; MiniMELF glass; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 4µA
на замовлення 740 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.41 грн
110+ 3.47 грн
330+ 2.65 грн
Мінімальне замовлення: 75
BZV55B3V6 L1G
BZV55B3V6 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.41 грн
Мінімальне замовлення: 75
TSC966CW RPG TSC966_F1801.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: SOT223
Pulsed collector current: 1A
Current gain: 90...300
Mounting: SMD
Kind of package: reel; tape
товар відсутній
TSM650N15CR RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
товар відсутній
TSM650N15CS RLG
TSM650N15CS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOP8
товар відсутній
P4SMA18A M2G P4SMA15A-M2G.pdf
P4SMA18A M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; unidirectional; ±5%; DO214AC
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
LL4006G L0G LL4001G.pdf
LL4006G L0G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward impulse current: 30A
Kind of package: reel; tape
товар відсутній
BZS55C4V7 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C4V7 RXG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
55+7.26 грн
Мінімальне замовлення: 55
BZT52C4V7 RH BZT52C5V6-RH.pdf
BZT52C4V7 RH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
36+11.3 грн
51+ 7.42 грн
73+ 5.19 грн
102+ 3.7 грн
250+ 2.59 грн
Мінімальне замовлення: 36
BZT52C4V7 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C4V7 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 880 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
90+4.6 грн
125+ 3.11 грн
250+ 2.53 грн
Мінімальне замовлення: 90
BZT52C4V7S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C4V7S R9G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 3460 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.41 грн
100+ 4.56 грн
230+ 3.84 грн
625+ 3.63 грн
Мінімальне замовлення: 75
MBR2060CT MBR2035CT-DTE.pdf
MBR2060CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+85.54 грн
8+ 53.35 грн
21+ 42.86 грн
57+ 40.54 грн
Мінімальне замовлення: 5
P6SMB120A M4G P6SMB_SER.pdf
P6SMB120A M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B3V9S RRG
BZT52B3V9S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
товар відсутній
S1J M2G S1D-M2G.pdf
S1J M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
товар відсутній
P6SMB22A M4G P6SMB_ser.pdf
P6SMB22A M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 20A
Breakdown voltage: 22V
товар відсутній
P6SMB22A R5G P6SMB_ser.pdf
P6SMB22A R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 20A
Breakdown voltage: 22V
товар відсутній
TESDU12V RGG TESDU5V0 SERIES_H1601.pdf
TESDU12V RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 25W; 13V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 25W
Max. off-state voltage: 12V
Breakdown voltage: 13V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+11.46 грн
45+ 9.14 грн
100+ 8.09 грн
115+ 7.87 грн
310+ 7.42 грн
Мінімальне замовлення: 40
P6SMB11CA M4G
P6SMB11CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Leakage current: 2µA
Max. forward impulse current: 40A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB11CA R5G
P6SMB11CA R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Leakage current: 2µA
Max. forward impulse current: 40A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB11CAHM4G
P6SMB11CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Leakage current: 2µA
Max. forward impulse current: 40A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB10A R4 P6SMB_SER.pdf
P6SMB10A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
P6SMB200A R4 P6SMB_ser.pdf
P6SMB200A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B2V7S RRG
BZT52B2V7S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 18µA
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.41 грн
105+ 3.66 грн
250+ 2.91 грн
315+ 2.77 грн
865+ 2.62 грн
Мінімальне замовлення: 75
BZT52B3V0S RRG
BZT52B3V0S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 9µA
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.41 грн
Мінімальне замовлення: 75
P6SMB39A P6SMB_ser.pdf
P6SMB39A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
TSC2411CX RFG
TSC2411CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23-3
Current gain: 82...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
B0530WS RRG B0530WS-RRG.pdf
B0530WS RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD323F; reel,tape
Case: SOD323F
Capacitance: 160pF
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
89+4.56 грн
100+ 3.82 грн
300+ 2.92 грн
823+ 2.76 грн
Мінімальне замовлення: 89
BZV55B5V6 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B5V6 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1425 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.41 грн
110+ 3.47 грн
355+ 2.49 грн
975+ 2.35 грн
Мінімальне замовлення: 75
TQM025NB04CR RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhanced
товар відсутній
P6SMB15A R4 P6SMB_ser.pdf
P6SMB15A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
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