Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (63528) > Сторінка 1057 з 1059
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SS19L R2 | TAIWAN SEMICONDUCTOR |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 90V; 1A; subSMA; reel,tape Case: subSMA Mounting: SMD Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 90V Max. forward voltage: 0.8V |
товар відсутній |
|||||||||||||||
| SMA4S60AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128 Type of diode: TVS Mounting: SMD Max. off-state voltage: 60V Semiconductor structure: unidirectional Case: SOD128 Leakage current: 1µA Max. forward impulse current: 4.1A Kind of package: reel; tape Breakdown voltage: 67.1...74.1V Peak pulse power dissipation: 0.4kW Tolerance: ±5% |
товар відсутній |
||||||||||||||||
| TSM3N80CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Power dissipation: 94W Case: IPAK Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
TSM3N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
| TSM3N80CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Power dissipation: 94W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: SMD Gate charge: 19nC Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| TSM3N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Power dissipation: 94W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
TSM180P03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.3A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.6nC Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
| TSM7P06CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; 15.6W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Power dissipation: 15.6W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 8.2nC Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
SR310 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: DO201AD Kind of package: tape Max. forward impulse current: 80A Max. forward voltage: 0.85V |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
BZX85C6V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 6.2V Zener current: 35mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 370 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
RABS20M M3G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Max. forward impulse current: 50A Case: ABS Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.16V Load current: 2A |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
TS2937CM33 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; D2PAK; SMD Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: SMD Input voltage: 4.3...26V Kind of voltage regulator: fixed; LDO; linear Case: D2PAK Tolerance: ±2% Output voltage: 3.3V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
товар відсутній |
|||||||||||||||
|
|
TS2937CM50 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2% Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: SMD Input voltage: 6...26V Kind of voltage regulator: fixed; LDO; linear Case: D2PAK Tolerance: ±2% Output voltage: 5V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
товар відсутній |
|||||||||||||||
 |
TS2937CP33 R0G | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: TS2937 Operating temperature: -40...125°C Tolerance: ±0.2% Number of channels: 1 Input voltage: 4.3...26V |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
TS2937CW33 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: SMD Input voltage: 4.3...26V Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Tolerance: ±2% Output voltage: 3.3V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
товар відсутній |
|||||||||||||||
|
|
TS2937CW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT223; SMD Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: SMD Input voltage: 6...26V Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Tolerance: ±2% Output voltage: 5V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
товар відсутній |
|||||||||||||||
 |
TS2937CZ33 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: THT Input voltage: 4.3...26V Kind of voltage regulator: fixed; LDO; linear Case: TO220 Tolerance: ±2% Output voltage: 3.3V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
товар відсутній |
|||||||||||||||
|
|
TS2937CZ50 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220; THT; ±2% Operating temperature: -40...125°C Manufacturer series: TS2937 Mounting: THT Input voltage: 6...26V Kind of voltage regulator: fixed; LDO; linear Case: TO220 Tolerance: ±2% Output voltage: 5V Output current: 0.5A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 |
товар відсутній |
|||||||||||||||
 +1 |
TSS42U RG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603; reel,tape; 150mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: 0603 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.15W |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| TSZU52C13 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 13V; 5mA; SMD; reel,tape; 0603; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 13V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 0603 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||||||
 |
ABS2 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 30A; ABS; SMT Electrical mounting: SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 30A Case: ABS Kind of package: reel; tape |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
|||||||||||||||
 |
S1M M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 12pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| TSM1NB60CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: IPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
TSM1NB60CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: DPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
| TSM1NB60CW RPG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| TS2596CM533 RNG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 3.3V DC Output current: 3A Case: D2PAK-5 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
 |
BZT52B10-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 10V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 10V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.2µA |
на замовлення 815 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BZT52B12-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 12V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 2375 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
BZT52B12S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 90nA |
товар відсутній |
|||||||||||||||
|
|
BZT52B13-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 13V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 5895 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BZT52B15-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 610 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BZT52B15S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
товар відсутній |
|||||||||||||||
|
|
BZT52B20-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 20V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 5285 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BZT52B24-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 24V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 5640 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
P6SMB18A R5G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 25A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
|
|
P6SMB18A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 25A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
 |
BZX84C7V5 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 7.5V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| SS25 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
|
|
P6SMB62CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
|
|
P6SMB62CA R5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
|
|
P6SMB62CAHM4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
 |
P4SMA36A M2G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; DO214AC; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 8.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
 |
GBU606 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| YBS2206G RAG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2.2A; Ifsm: 90A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2.2A Max. forward impulse current: 90A Case: YBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
товар відсутній |
||||||||||||||||
|
|
TSM160P02CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±10V On-state resistance: 16mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
 |
BZT52C3V9 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 740 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
TS4264CW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 0.1A Case: SOT223 Mounting: SMD Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...45V |
товар відсутній |
|||||||||||||||
|
|
TS4264GCW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 0.1A Case: SOT223 Mounting: SMD Operating temperature: -40...150°C Tolerance: ±3% Number of channels: 1 Input voltage: 5.5...45V |
товар відсутній |
|||||||||||||||
 |
BZV55B3V0 L1G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; MiniMELF glass; Ir: 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 4µA |
на замовлення 740 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BZV55B3V6 L1G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| TSC966CW RPG | TAIWAN SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 1W Case: SOT223 Pulsed collector current: 1A Current gain: 90...300 Mounting: SMD Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
| TSM650N15CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56 Drain-source voltage: 150V Drain current: 4A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PDFN56 |
товар відсутній |
||||||||||||||||
|
|
TSM650N15CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8 Drain-source voltage: 150V Drain current: 4A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOP8 |
товар відсутній |
|||||||||||||||
|
|
P4SMA18A M2G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 18V; 16.5A; unidirectional; ±5%; DO214AC Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 16.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
 |
LL4006G L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Case: MELF Max. forward impulse current: 30A Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
 |
BZS55C4V7 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
BZT52C4V7 RH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BZT52C4V7 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 880 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BZT52C4V7S R9G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 3460 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
MBR2060CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
|
| SS19L R2 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1A; subSMA; reel,tape
Case: subSMA
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 90V
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1A; subSMA; reel,tape
Case: subSMA
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 90V
Max. forward voltage: 0.8V
товар відсутній
| SMA4S60AH |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Case: SOD128
Leakage current: 1µA
Max. forward impulse current: 4.1A
Kind of package: reel; tape
Breakdown voltage: 67.1...74.1V
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Case: SOD128
Leakage current: 1µA
Max. forward impulse current: 4.1A
Kind of package: reel; tape
Breakdown voltage: 67.1...74.1V
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
товар відсутній
| TSM3N80CH C5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
товар відсутній
| TSM3N80CI C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
товар відсутній
| TSM3N80CP ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
товар відсутній
| TSM3N80CZ C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
товар відсутній
| TSM180P03CS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhanced
товар відсутній
| TSM7P06CP ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; 15.6W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Power dissipation: 15.6W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; 15.6W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Power dissipation: 15.6W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
товар відсутній
| SR310 R0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Kind of package: tape
Max. forward impulse current: 80A
Max. forward voltage: 0.85V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Kind of package: tape
Max. forward impulse current: 80A
Max. forward voltage: 0.85V
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.3 грн |
| 25+ | 16.95 грн |
| 58+ | 14.64 грн |
| BZX85C6V2 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Zener current: 35mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Zener current: 35mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.94 грн |
| 100+ | 5.42 грн |
| 195+ | 4.31 грн |
| RABS20M M3G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. forward impulse current: 50A
Case: ABS
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.16V
Load current: 2A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. forward impulse current: 50A
Case: ABS
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.16V
Load current: 2A
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.51 грн |
| 30+ | 12.46 грн |
| TS2937CM33 RNG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; D2PAK; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: D2PAK
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; D2PAK; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: D2PAK
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
товар відсутній
| TS2937CM50 RNG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2%
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: D2PAK
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2%
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: D2PAK
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
товар відсутній
| TS2937CP33 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 4.3...26V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 4.3...26V
на замовлення 124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.55 грн |
| 6+ | 65.18 грн |
| 17+ | 50.69 грн |
| 46+ | 47.8 грн |
| TS2937CW33 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
товар відсутній
| TS2937CW50 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT223; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT223; SMD
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: SMD
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
товар відсутній
| TS2937CZ33 C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: THT
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: TO220
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: THT
Input voltage: 4.3...26V
Kind of voltage regulator: fixed; LDO; linear
Case: TO220
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
товар відсутній
| TS2937CZ50 C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220; THT; ±2%
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: THT
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: TO220
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220; THT; ±2%
Operating temperature: -40...125°C
Manufacturer series: TS2937
Mounting: THT
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Case: TO220
Tolerance: ±2%
Output voltage: 5V
Output current: 0.5A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
товар відсутній
| TSS42U RG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603; reel,tape; 150mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: 0603
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603; reel,tape; 150mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: 0603
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.15W
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.98 грн |
| 62+ | 5.87 грн |
| 190+ | 4.49 грн |
| 520+ | 4.2 грн |
| TSZU52C13 RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; 5mA; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 0603
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; 5mA; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 0603
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| ABS2 RGG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 30A; ABS; SMT
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 30A
Case: ABS
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 30A; ABS; SMT
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 30A
Case: ABS
Kind of package: reel; tape
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| S1M M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 26.07 грн |
| TSM1NB60CH C5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
| TSM1NB60CP ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
| TSM1NB60CW RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
| TS2596CM533 RNG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
товар відсутній
| BZT52B10-G RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 10V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 10V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 815 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.45 грн |
| 70+ | 5.36 грн |
| 100+ | 4.27 грн |
| 220+ | 3.85 грн |
| 500+ | 3.83 грн |
| 600+ | 3.64 грн |
| BZT52B12-G RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 2375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11 грн |
| 65+ | 5.64 грн |
| 100+ | 4.49 грн |
| 210+ | 4.06 грн |
| 500+ | 4.03 грн |
| 570+ | 3.83 грн |
| BZT52B12S RRG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 90nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 90nA
товар відсутній
| BZT52B13-G RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11 грн |
| 65+ | 5.64 грн |
| 100+ | 4.49 грн |
| 210+ | 4.06 грн |
| 500+ | 4.03 грн |
| 570+ | 3.83 грн |
| 3000+ | 3.76 грн |
| BZT52B15-G RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 610 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.23 грн |
| 65+ | 5.79 грн |
| 100+ | 4.61 грн |
| 190+ | 4.53 грн |
| 500+ | 4.14 грн |
| BZT52B15S RRG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
товар відсутній
| BZT52B20-G RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11 грн |
| 65+ | 5.64 грн |
| 100+ | 4.49 грн |
| 210+ | 4 грн |
| 570+ | 3.79 грн |
| 3000+ | 3.76 грн |
| BZT52B24-G RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 24V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 24V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5640 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11 грн |
| 65+ | 5.64 грн |
| 100+ | 4.49 грн |
| 210+ | 4 грн |
| 570+ | 3.79 грн |
| 3000+ | 3.76 грн |
| P6SMB18A R5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| P6SMB18A M4G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| BZX84C7V5 RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.79 грн |
| 100+ | 3.9 грн |
| 305+ | 2.8 грн |
| 840+ | 2.64 грн |
| SS25 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товар відсутній
| P6SMB62CA M4G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| P6SMB62CA R5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| P6SMB62CAHM4G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| P4SMA36A M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; DO214AC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; DO214AC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| GBU606 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.77 грн |
| 6+ | 65.9 грн |
| 17+ | 50.37 грн |
| YBS2206G RAG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2.2A; Ifsm: 90A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2.2A; Ifsm: 90A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
| TSM160P02CS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
товар відсутній
| BZT52C3V9 RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 740 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.45 грн |
| 125+ | 3.01 грн |
| 250+ | 2.44 грн |
| TS4264CW50 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...45V
товар відсутній
| TS4264GCW50 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 5.5...45V
товар відсутній
| BZV55B3V0 L1G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; MiniMELF glass; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 4µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; MiniMELF glass; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 4µA
на замовлення 740 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.23 грн |
| 110+ | 3.35 грн |
| 330+ | 2.56 грн |
| BZV55B3V6 L1G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.23 грн |
| TSC966CW RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: SOT223
Pulsed collector current: 1A
Current gain: 90...300
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 1W
Case: SOT223
Pulsed collector current: 1A
Current gain: 90...300
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| TSM650N15CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
товар відсутній
| TSM650N15CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOP8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8
Drain-source voltage: 150V
Drain current: 4A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOP8
товар відсутній
| P4SMA18A M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; unidirectional; ±5%; DO214AC
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; unidirectional; ±5%; DO214AC
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| LL4006G L0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward impulse current: 30A
Kind of package: reel; tape
товар відсутній
| BZS55C4V7 RXG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 7.02 грн |
| BZT52C4V7 RH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 10.92 грн |
| 51+ | 7.17 грн |
| 73+ | 5.01 грн |
| 102+ | 3.58 грн |
| 250+ | 2.51 грн |
| BZT52C4V7 RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.45 грн |
| 125+ | 3.01 грн |
| 250+ | 2.45 грн |
| BZT52C4V7S R9G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 3460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.23 грн |
| 100+ | 4.41 грн |
| 230+ | 3.7 грн |
| 625+ | 3.5 грн |
| MBR2060CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 82.67 грн |
| 8+ | 51.56 грн |
| 21+ | 41.35 грн |
| 56+ | 39.03 грн |