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P6SMB120A M4G P6SMB120A M4G TAIWAN SEMICONDUCTOR P6SMB_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B3V9S RRG BZT52B3V9S RRG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
товар відсутній
S1J M2G S1J M2G TAIWAN SEMICONDUCTOR S1D-M2G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
товар відсутній
P6SMB22A M4G P6SMB22A M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 20A
Breakdown voltage: 22V
товар відсутній
P6SMB22A R5G P6SMB22A R5G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 20A
Breakdown voltage: 22V
товар відсутній
TESDU12V RGG TESDU12V RGG TAIWAN SEMICONDUCTOR TESDU5V0 SERIES_H1601.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 25W; 13V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 25W
Max. off-state voltage: 12V
Breakdown voltage: 13V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
40+11.07 грн
45+ 8.84 грн
100+ 7.82 грн
115+ 7.6 грн
310+ 7.17 грн
Мінімальне замовлення: 40
P6SMB11CA M4G P6SMB11CA M4G TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB11CA R5G P6SMB11CA R5G TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB11CAHM4G P6SMB11CAHM4G TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB10A R4 P6SMB10A R4 TAIWAN SEMICONDUCTOR P6SMB_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
P6SMB200A R4 P6SMB200A R4 TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B2V7S RRG BZT52B2V7S RRG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 18µA
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
105+ 3.54 грн
250+ 2.82 грн
315+ 2.68 грн
865+ 2.53 грн
Мінімальне замовлення: 75
BZT52B3V0S RRG BZT52B3V0S RRG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 9µA
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
Мінімальне замовлення: 75
P6SMB39A P6SMB39A TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
30+14.04 грн
35+ 11.73 грн
95+ 9.2 грн
250+ 8.69 грн
Мінімальне замовлення: 30
TSC2411CX RFG TSC2411CX RFG TAIWAN SEMICONDUCTOR Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23-3
Current gain: 82...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
1.5KE400CA 1.5KE400CA TAIWAN SEMICONDUCTOR 1.5KExx_SER.pdf Category: Bidirectional THT transil diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
8+53.03 грн
10+ 42 грн
25+ 34.76 грн
32+ 26.79 грн
87+ 25.35 грн
Мінімальне замовлення: 8
B0530WS RRG B0530WS RRG TAIWAN SEMICONDUCTOR B0530WS-RRG.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD323F; reel,tape
Case: SOD323F
Capacitance: 160pF
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
89+4.41 грн
100+ 3.69 грн
300+ 2.82 грн
823+ 2.67 грн
Мінімальне замовлення: 89
BZV55B5V6 L1G BZV55B5V6 L1G TAIWAN SEMICONDUCTOR BZV55B2V4%20SERIES_G2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1425 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
110+ 3.35 грн
355+ 2.4 грн
975+ 2.27 грн
Мінімальне замовлення: 75
TQM025NB04CR RLG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhanced
товар відсутній
P6SMB15A R4 P6SMB15A R4 TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB39CA M4G P6SMB39CA M4G TAIWAN SEMICONDUCTOR P6SMB_SER.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
10+42.89 грн
22+ 16.73 грн
25+ 15.06 грн
74+ 11.37 грн
204+ 10.72 грн
Мінімальне замовлення: 10
P6SMB39CA R5G P6SMB39CA R5G TAIWAN SEMICONDUCTOR P6SMB_SER.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB39CAHM4G P6SMB39CAHM4G TAIWAN SEMICONDUCTOR P6SMB_SER.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B3V6S RRG BZT52B3V6S RRG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.6V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 4.5µA
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
105+ 3.54 грн
250+ 2.82 грн
315+ 2.68 грн
Мінімальне замовлення: 75
TLD5S33AH TAIWAN SEMICONDUCTOR TLD5S10AH%20SERIES_B1809.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3.6kW; 36.7÷40.6V; 68A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
TSD10H100CW MNG TAIWAN SEMICONDUCTOR TSD10H100CW%20SERIES_A15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Case: D2PAK
Max. forward impulse current: 100A
товар відсутній
TSD10H150CW MNG TAIWAN SEMICONDUCTOR TSD10H100CW%20SERIES_A15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10A; D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.88V
Case: D2PAK
Max. forward impulse current: 100A
товар відсутній
TSD10H200CW MNG TAIWAN SEMICONDUCTOR TSD10H100CW%20SERIES_A15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 10A; D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Case: D2PAK
Max. forward impulse current: 100A
товар відсутній
SF3004PT SF3004PT TAIWAN SEMICONDUCTOR SF3001PT_ser.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO247AD
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
3+170.8 грн
5+ 144.11 грн
8+ 116.59 грн
Мінімальне замовлення: 3
BZV55B2V7 L1G BZV55B2V7 L1G TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 10µA
товар відсутній
BZV55B4V3 L1G BZV55B4V3 L1G TAIWAN SEMICONDUCTOR BZV55B2V4%20Series_F1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
110+ 3.35 грн
335+ 2.55 грн
Мінімальне замовлення: 75
BZV55B6V8 L1G BZV55B6V8 L1G TAIWAN SEMICONDUCTOR BZV55B2V4%20SERIES_G2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
BZV55B8V2 L1G BZV55B8V2 L1G TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 905 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
110+ 3.35 грн
350+ 2.4 грн
Мінімальне замовлення: 75
S1GM RSG S1GM RSG TAIWAN SEMICONDUCTOR S1GM-RSG.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50us; microSMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 5pF
Case: microSMA
Max. forward voltage: 1.1V
Max. forward impulse current: 20A
Kind of package: reel; tape
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
50+7.95 грн
55+ 6.59 грн
100+ 5.87 грн
Мінімальне замовлення: 50
TSD20H100CW MNG TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 20A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
товар відсутній
BZX85C47 R0G BZX85C47 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 47V; 4mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 47V
Zener current: 4mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 375 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
100+ 4.11 грн
250+ 3.64 грн
260+ 3.3 грн
Мінімальне замовлення: 75
BZT52C3V0 RHG BZT52C3V0 RHG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 9µA
на замовлення 989 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
105+ 3.54 грн
250+ 2.82 грн
315+ 2.67 грн
865+ 2.53 грн
Мінімальне замовлення: 75
BZT52C3V0S R9G BZT52C3V0S R9G TAIWAN SEMICONDUCTOR BZT52C2V4S%20SERIES_J2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 9µA
на замовлення 6995 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
100+ 4.41 грн
230+ 3.7 грн
625+ 3.5 грн
Мінімальне замовлення: 75
S1ML R2 S1ML R2 TAIWAN SEMICONDUCTOR S1BL-RVG.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; subSMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 9pF
Case: subSMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3116 шт:
термін постачання 21-30 дні (днів)
74+5.3 грн
100+ 4.43 грн
247+ 3.43 грн
679+ 3.24 грн
Мінімальне замовлення: 74
BZS55C3V9 RXG BZS55C3V9 RXG TAIWAN SEMICONDUCTOR BZS55C2V4%20SERIES_D1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 468 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
130+ 2.85 грн
395+ 2.16 грн
Мінімальне замовлення: 75
P6SMB56A M4G P6SMB56A M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56V; 8.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB56CA M4G P6SMB56CA M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB56CAHM4G P6SMB56CAHM4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB56CAHR5G P6SMB56CAHR5G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
HER208G R0 HER208G R0 TAIWAN SEMICONDUCTOR HER208G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; reel,tape; DO15
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO15
товар відсутній
P6SMB110CAHM4G P6SMB110CAHM4G TAIWAN SEMICONDUCTOR P6SMB%20SERIES_N1701.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 4.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 2µA
Max. forward impulse current: 4.1A
Breakdown voltage: 110V
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
P6SMB110CAHR5G P6SMB110CAHR5G TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 4.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 2µA
Max. forward impulse current: 4.1A
Breakdown voltage: 110V
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
BZT52B5V6-G RHG BZT52B5V6-G RHG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 5.6V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 5535 шт:
термін постачання 21-30 дні (днів)
40+10.45 грн
70+ 5.36 грн
100+ 4.27 грн
210+ 4.06 грн
500+ 3.83 грн
3000+ 3.68 грн
Мінімальне замовлення: 40
BZT52B5V6S RRG BZT52B5V6S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S%20SERIES_H2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
105+ 3.54 грн
Мінімальне замовлення: 75
P6SMB51CAHM4G P6SMB51CAHM4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 51V; 8.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43.6V
Breakdown voltage: 51V
Max. forward impulse current: 8.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB91CAHM4G P6SMB91CAHM4G TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 91V; 5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
MTZJ22SC R0G MTZJ22SC R0G TAIWAN SEMICONDUCTOR MTZJ2V0SA SERIES_D2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 21.63V; 5mA; reel,tape; DO34; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 21.63V
Zener current: 5mA
Kind of package: reel; tape
Case: DO34
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 9620 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
100+ 4.16 грн
250+ 3.31 грн
270+ 3.17 грн
735+ 3 грн
1000+ 2.97 грн
5000+ 2.88 грн
Мінімальне замовлення: 75
BZS55C3V6 RXG BZS55C3V6 RXG TAIWAN SEMICONDUCTOR BZS55C2V4%20SERIES_D1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
75+5.23 грн
130+ 2.85 грн
Мінімальне замовлення: 75
TSM60NB260CI C0G TSM60NB260CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 32.1W; TO220FP
Drain-source voltage: 600V
Drain current: 7.8A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 32.1W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
товар відсутній
P6SMB18CA M4G P6SMB18CA M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
30+12.17 грн
80+ 10.43 грн
Мінімальне замовлення: 30
P6SMB18CA R5G P6SMB18CA R5G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
товар відсутній
P4SMA18CA M2G P4SMA18CA M2G TAIWAN SEMICONDUCTOR P4SMA15A-M2G.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB120CAHM4G P6SMB120CAHM4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Tolerance: ±5%
Breakdown voltage: 120V
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 3.8A
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
товар відсутній
RSFKL R2G RSFKL R2G TAIWAN SEMICONDUCTOR RSFxL SER.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 500ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
на замовлення 6945 шт:
термін постачання 21-30 дні (днів)
15+32.76 грн
25+ 16.37 грн
65+ 13.4 грн
175+ 12.67 грн
2500+ 12.17 грн
Мінімальне замовлення: 15
TSM4NB60CI C0G TSM4NB60CI C0G TAIWAN SEMICONDUCTOR TSM4NB60_L1901.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 14.5nC
Kind of channel: enhanced
товар відсутній
P6SMB120A M4G P6SMB_SER.pdf
P6SMB120A M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B3V9S RRG
BZT52B3V9S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
товар відсутній
S1J M2G S1D-M2G.pdf
S1J M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
товар відсутній
P6SMB22A M4G P6SMB_ser.pdf
P6SMB22A M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 20A
Breakdown voltage: 22V
товар відсутній
P6SMB22A R5G P6SMB_ser.pdf
P6SMB22A R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 20A
Breakdown voltage: 22V
товар відсутній
TESDU12V RGG TESDU5V0 SERIES_H1601.pdf
TESDU12V RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 25W; 13V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 25W
Max. off-state voltage: 12V
Breakdown voltage: 13V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+11.07 грн
45+ 8.84 грн
100+ 7.82 грн
115+ 7.6 грн
310+ 7.17 грн
Мінімальне замовлення: 40
P6SMB11CA M4G
P6SMB11CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB11CA R5G
P6SMB11CA R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB11CAHM4G
P6SMB11CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
товар відсутній
P6SMB10A R4 P6SMB_SER.pdf
P6SMB10A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
P6SMB200A R4 P6SMB_ser.pdf
P6SMB200A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B2V7S RRG
BZT52B2V7S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 18µA
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
105+ 3.54 грн
250+ 2.82 грн
315+ 2.68 грн
865+ 2.53 грн
Мінімальне замовлення: 75
BZT52B3V0S RRG
BZT52B3V0S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 9µA
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
Мінімальне замовлення: 75
P6SMB39A P6SMB_ser.pdf
P6SMB39A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
30+14.04 грн
35+ 11.73 грн
95+ 9.2 грн
250+ 8.69 грн
Мінімальне замовлення: 30
TSC2411CX RFG
TSC2411CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23-3
Current gain: 82...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
1.5KE400CA 1.5KExx_SER.pdf
1.5KE400CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+53.03 грн
10+ 42 грн
25+ 34.76 грн
32+ 26.79 грн
87+ 25.35 грн
Мінімальне замовлення: 8
B0530WS RRG B0530WS-RRG.pdf
B0530WS RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD323F; reel,tape
Case: SOD323F
Capacitance: 160pF
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
89+4.41 грн
100+ 3.69 грн
300+ 2.82 грн
823+ 2.67 грн
Мінімальне замовлення: 89
BZV55B5V6 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B5V6 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1425 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
110+ 3.35 грн
355+ 2.4 грн
975+ 2.27 грн
Мінімальне замовлення: 75
TQM025NB04CR RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhanced
товар відсутній
P6SMB15A R4 P6SMB_ser.pdf
P6SMB15A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB39CA M4G P6SMB_SER.pdf
P6SMB39CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
10+42.89 грн
22+ 16.73 грн
25+ 15.06 грн
74+ 11.37 грн
204+ 10.72 грн
Мінімальне замовлення: 10
P6SMB39CA R5G P6SMB_SER.pdf
P6SMB39CA R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB39CAHM4G P6SMB_SER.pdf
P6SMB39CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 39V; 11.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
BZT52B3V6S RRG
BZT52B3V6S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.6V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 4.5µA
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
105+ 3.54 грн
250+ 2.82 грн
315+ 2.68 грн
Мінімальне замовлення: 75
TLD5S33AH TLD5S10AH%20SERIES_B1809.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3.6kW; 36.7÷40.6V; 68A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
TSD10H100CW MNG TSD10H100CW%20SERIES_A15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Case: D2PAK
Max. forward impulse current: 100A
товар відсутній
TSD10H150CW MNG TSD10H100CW%20SERIES_A15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10A; D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.88V
Case: D2PAK
Max. forward impulse current: 100A
товар відсутній
TSD10H200CW MNG TSD10H100CW%20SERIES_A15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 10A; D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Case: D2PAK
Max. forward impulse current: 100A
товар відсутній
SF3004PT SF3001PT_ser.pdf
SF3004PT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO247AD
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+170.8 грн
5+ 144.11 грн
8+ 116.59 грн
Мінімальне замовлення: 3
BZV55B2V7 L1G
BZV55B2V7 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 10µA
товар відсутній
BZV55B4V3 L1G BZV55B2V4%20Series_F1804.pdf
BZV55B4V3 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
110+ 3.35 грн
335+ 2.55 грн
Мінімальне замовлення: 75
BZV55B6V8 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B6V8 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
BZV55B8V2 L1G
BZV55B8V2 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 905 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
110+ 3.35 грн
350+ 2.4 грн
Мінімальне замовлення: 75
S1GM RSG S1GM-RSG.pdf
S1GM RSG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50us; microSMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 5pF
Case: microSMA
Max. forward voltage: 1.1V
Max. forward impulse current: 20A
Kind of package: reel; tape
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
50+7.95 грн
55+ 6.59 грн
100+ 5.87 грн
Мінімальне замовлення: 50
TSD20H100CW MNG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 20A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
товар відсутній
BZX85C47 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C47 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 47V; 4mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 47V
Zener current: 4mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 375 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
100+ 4.11 грн
250+ 3.64 грн
260+ 3.3 грн
Мінімальне замовлення: 75
BZT52C3V0 RHG
BZT52C3V0 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 9µA
на замовлення 989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
105+ 3.54 грн
250+ 2.82 грн
315+ 2.67 грн
865+ 2.53 грн
Мінімальне замовлення: 75
BZT52C3V0S R9G BZT52C2V4S%20SERIES_J2212.pdf
BZT52C3V0S R9G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 9µA
на замовлення 6995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
100+ 4.41 грн
230+ 3.7 грн
625+ 3.5 грн
Мінімальне замовлення: 75
S1ML R2 S1BL-RVG.pdf
S1ML R2
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; subSMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 9pF
Case: subSMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3116 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
74+5.3 грн
100+ 4.43 грн
247+ 3.43 грн
679+ 3.24 грн
Мінімальне замовлення: 74
BZS55C3V9 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C3V9 RXG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 468 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
130+ 2.85 грн
395+ 2.16 грн
Мінімальне замовлення: 75
P6SMB56A M4G P6SMB_ser.pdf
P6SMB56A M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56V; 8.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB56CA M4G P6SMB_ser.pdf
P6SMB56CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB56CAHM4G P6SMB_ser.pdf
P6SMB56CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB56CAHR5G P6SMB_ser.pdf
P6SMB56CAHR5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
HER208G R0 HER208G.pdf
HER208G R0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; reel,tape; DO15
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO15
товар відсутній
P6SMB110CAHM4G P6SMB%20SERIES_N1701.pdf
P6SMB110CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 4.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 2µA
Max. forward impulse current: 4.1A
Breakdown voltage: 110V
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
P6SMB110CAHR5G
P6SMB110CAHR5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 4.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 2µA
Max. forward impulse current: 4.1A
Breakdown voltage: 110V
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
BZT52B5V6-G RHG
BZT52B5V6-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 5.6V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 5535 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+10.45 грн
70+ 5.36 грн
100+ 4.27 грн
210+ 4.06 грн
500+ 3.83 грн
3000+ 3.68 грн
Мінімальне замовлення: 40
BZT52B5V6S RRG BZT52B2V4S%20SERIES_H2212.pdf
BZT52B5V6S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
105+ 3.54 грн
Мінімальне замовлення: 75
P6SMB51CAHM4G P6SMB_ser.pdf
P6SMB51CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 51V; 8.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43.6V
Breakdown voltage: 51V
Max. forward impulse current: 8.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB91CAHM4G
P6SMB91CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 91V; 5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
MTZJ22SC R0G MTZJ2V0SA SERIES_D2301.pdf
MTZJ22SC R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 21.63V; 5mA; reel,tape; DO34; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 21.63V
Zener current: 5mA
Kind of package: reel; tape
Case: DO34
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 9620 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
100+ 4.16 грн
250+ 3.31 грн
270+ 3.17 грн
735+ 3 грн
1000+ 2.97 грн
5000+ 2.88 грн
Мінімальне замовлення: 75
BZS55C3V6 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C3V6 RXG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.23 грн
130+ 2.85 грн
Мінімальне замовлення: 75
TSM60NB260CI C0G
TSM60NB260CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 32.1W; TO220FP
Drain-source voltage: 600V
Drain current: 7.8A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 32.1W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
товар відсутній
P6SMB18CA M4G P6SMB_ser.pdf
P6SMB18CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
30+12.17 грн
80+ 10.43 грн
Мінімальне замовлення: 30
P6SMB18CA R5G P6SMB_ser.pdf
P6SMB18CA R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Breakdown voltage: 18V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
товар відсутній
P4SMA18CA M2G P4SMA15A-M2G.pdf
P4SMA18CA M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 16.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 16.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB120CAHM4G P6SMB_ser.pdf
P6SMB120CAHM4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.8A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Tolerance: ±5%
Breakdown voltage: 120V
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 3.8A
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
товар відсутній
RSFKL R2G RSFxL SER.pdf
RSFKL R2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.5A; 500ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 10A
Kind of package: reel; tape
на замовлення 6945 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+32.76 грн
25+ 16.37 грн
65+ 13.4 грн
175+ 12.67 грн
2500+ 12.17 грн
Мінімальне замовлення: 15
TSM4NB60CI C0G TSM4NB60_L1901.pdf
TSM4NB60CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 14.5nC
Kind of channel: enhanced
товар відсутній
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