Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99380) > Сторінка 1641 з 1657
| Фото | Назва | Виробник | Інформація |
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| 2SC4725TLP | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Frequency: 1.5GHz Collector-emitter voltage: 20V Current gain: 82...180 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.15W Polarisation: bipolar |
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| RB876WTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 5V; 10mA; SC75A,SOT416; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 5V Load current: 10mA Semiconductor structure: double series Max. forward voltage: 0.35V Case: SC75A; SOT416 Kind of package: reel; tape Leakage current: 120µA |
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| DTA113ZETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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| DTA123EETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Power dissipation: 0.2W Frequency: 250MHz Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Collector current: 0.1A |
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| DTA123YETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Power dissipation: 0.15W Frequency: 250MHz Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Collector-emitter voltage: 50V Base-emitter resistor: 10kΩ Current gain: 33 Collector current: 0.1A |
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RBR1MM30ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: SOD123F Max. forward voltage: 0.48V Leakage current: 50µA |
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RBR3MM30ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: SOD123F Max. forward voltage: 0.51V Leakage current: 0.1mA |
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| RBR3LAM30ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.58V Leakage current: 50µA |
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| RBR5LAM30ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 5A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 0.53V Leakage current: 0.1mA |
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| US6K1TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.5A; Idm: 6A; 1W; TUMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 1.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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BD9778HFP-TR | ROHM SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7 Operating temperature: -40...125°C Mounting: SMD Output voltage: 1...35V DC Output current: 2A Type of integrated circuit: PMIC Number of channels: 1 Input voltage: 7...35V DC Frequency: 500MHz Kind of integrated circuit: DC/DC converter Case: HRP7 Topology: buck |
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| SCS306AHGC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 46W; TO220AC; tube Mounting: THT Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.71V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 170A Leakage current: 120µA Power dissipation: 46W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC |
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| SCS306AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 22A Semiconductor structure: single diode Max. forward voltage: 1.71V Case: TO220FP-2 Kind of package: tube Leakage current: 120µA Max. forward impulse current: 170A Power dissipation: 30W |
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| RCX160N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
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| RUC002N05HZGT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Pulsed drain current: 800A Power dissipation: 0.35W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 50V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SST3 On-state resistance: 7.2Ω Gate-source voltage: ±8V Mounting: SMD |
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| RUC002N05T116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Pulsed drain current: 800A Power dissipation: 0.35W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 50V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SST3 On-state resistance: 7.2Ω Gate-source voltage: ±8V Mounting: SMD |
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RUM002N05T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±8V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 4225 шт: термін постачання 21-30 дні (днів) |
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QS5U34TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Pulsed drain current: 3A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±10V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| US6K4TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; Idm: 3A; 1W; TUMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Pulsed drain current: 3A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±10V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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DAN202KT146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SC59; SOT346 Max. forward voltage: 1.2V Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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| RF601BM2DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 6A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 0.93V Max. forward impulse current: 60A Kind of package: reel; tape |
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RF601BM2DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 6A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 0.93V Max. forward impulse current: 60A Kind of package: reel; tape |
на замовлення 1605 шт: термін постачання 21-30 дні (днів) |
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| R6006JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 86W Drain-source voltage: 600V Drain current: 6A On-state resistance: 936mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 18A |
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| EMN11T2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT563; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double x2 Max. off-state voltage: 80V Reverse recovery time: 4ns Max. load current: 0.3A Max. forward voltage: 1.2V Load current: 0.1A Max. forward impulse current: 4A Type of diode: switching |
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| EMP11T2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT563; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double x2 Max. off-state voltage: 80V Reverse recovery time: 4ns Max. load current: 0.3A Max. forward voltage: 1.2V Load current: 0.1A Max. forward impulse current: 4A Type of diode: switching |
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| EMT18T2R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 12V; 0.5A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT563 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz |
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EMT1T2R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
на замовлення 4355 шт: термін постачання 21-30 дні (днів) |
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| EMX18T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT563 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
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| EMX1FHAT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
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| EMX1GT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Mounting: SMD Case: SOT563 Kind of package: reel; tape Frequency: 180MHz Collector-emitter voltage: 50V Collector current: 0.15A Type of transistor: NPN x2 Power dissipation: 0.15W Polarisation: bipolar |
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| EMX1T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
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| EMX26T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Type of transistor: NPN x2 Current gain: 820...2700 Frequency: 250MHz Collector current: 0.15A |
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| EMX52T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 150mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Type of transistor: NPN x2 Current gain: 120...560 Frequency: 350MHz Collector current: 0.1A |
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RB168MM100TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 1A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.81V Case: SOD123F Kind of package: reel; tape Leakage current: 0.4µA Max. forward impulse current: 40A |
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| R6520KNX3C16 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 220W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 60A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
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SST4403HZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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SST4403T116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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| 2SCR502UBTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.5A; 200mW; SOT323F Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323F Pulsed collector current: 1A Current gain: 500 Mounting: SMD Kind of package: reel; tape Frequency: 360MHz |
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| RSQ020N03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| RUF025N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 5A Drain-source voltage: 20V Drain current: 2.5A |
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| RUF025N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 5A Drain-source voltage: 20V Drain current: 2.5A |
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| RQ5E035BNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
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2SCR513P5T100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SC62,SOT89 Mounting: SMD Kind of package: reel; tape Case: SC62; SOT89 Frequency: 360MHz Collector-emitter voltage: 50V Current gain: 180...450 Collector current: 1A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar |
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2SCR513PFRAT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SC62,SOT89 Mounting: SMD Kind of package: reel; tape Case: SC62; SOT89 Frequency: 360MHz Collector-emitter voltage: 50V Current gain: 180...450 Collector current: 1A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar |
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2SCR514P5T100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC62,SOT89 Mounting: SMD Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 Frequency: 320MHz Collector-emitter voltage: 80V Current gain: 120...390 |
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2SCR514PFRAT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC62,SOT89 Mounting: SMD Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 Frequency: 320MHz Collector-emitter voltage: 80V Current gain: 120...390 |
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| 2SCR514RTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC96 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.7A Power dissipation: 0.5W Case: SC96 Current gain: 120...390 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
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2SCR346PT100P | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 0.1A; 500mW; SC62,SOT89 Mounting: SMD Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 Collector-emitter voltage: 400V Current gain: 82...180 |
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2SCR346PT100Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 0.1A; 500mW; SC62,SOT89 Mounting: SMD Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 Collector-emitter voltage: 400V Current gain: 120...270 |
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2SCR293P5T100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SC62,SOT89 Mounting: SMD Collector current: 1A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 Frequency: 320MHz Collector-emitter voltage: 30V Current gain: 270...680 |
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SCT3060ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247 Mounting: THT Drain-source voltage: 650V Drain current: 39A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Kind of package: tube Technology: SiC Kind of channel: enhanced Case: TO247 |
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| SCT3060ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247 Mounting: THT On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Kind of package: tube Gate charge: 58nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 97A Case: TO247 Drain-source voltage: 650V Drain current: 39A |
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| SCT3060ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W Mounting: THT Drain-source voltage: 650V Drain current: 39A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 58nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 97A Case: TO247-4 |
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| SCT3060AW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W Mounting: SMD Drain-source voltage: 650V Drain current: 38A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 159W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 95A Case: TO263-7 |
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SCT2450KEC | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247 Case: TO247 Power dissipation: 85W Polarisation: unipolar Kind of package: tube Gate charge: 27nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 25A Mounting: THT Drain-source voltage: 1.2kV Drain current: 7A On-state resistance: 0.45Ω Type of transistor: N-MOSFET |
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| SCT2750NYTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5.9A; Idm: 14A; 57W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5.9A Pulsed drain current: 14A Power dissipation: 57W Case: TO268 Gate-source voltage: -6...22V On-state resistance: 975mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
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| SCT2H12NYTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 44W; TO268 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 4A Pulsed drain current: 10A Power dissipation: 44W Case: TO268 Gate-source voltage: -6...22V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| SCT2H12NZGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.7A Pulsed drain current: 9.2A Power dissipation: 35W Case: TO3PFM Gate-source voltage: -6...22V On-state resistance: 1.5Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
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| RGS80TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3 Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 62ns Turn-off time: 291ns Type of transistor: IGBT Power dissipation: 136W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 48nC Mounting: THT |
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| RGS80TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 104nC Mounting: THT |
товар відсутній |
| 2SC4725TLP |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Frequency: 1.5GHz
Collector-emitter voltage: 20V
Current gain: 82...180
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Frequency: 1.5GHz
Collector-emitter voltage: 20V
Current gain: 82...180
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
товар відсутній
| RB876WTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 5V; 10mA; SC75A,SOT416; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 5V
Load current: 10mA
Semiconductor structure: double series
Max. forward voltage: 0.35V
Case: SC75A; SOT416
Kind of package: reel; tape
Leakage current: 120µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 5V; 10mA; SC75A,SOT416; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 5V
Load current: 10mA
Semiconductor structure: double series
Max. forward voltage: 0.35V
Case: SC75A; SOT416
Kind of package: reel; tape
Leakage current: 120µA
товар відсутній
| DTA113ZETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| DTA123EETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Power dissipation: 0.2W
Frequency: 250MHz
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Power dissipation: 0.2W
Frequency: 250MHz
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Collector current: 0.1A
товар відсутній
| DTA123YETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Power dissipation: 0.15W
Frequency: 250MHz
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Current gain: 33
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Power dissipation: 0.15W
Frequency: 250MHz
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Current gain: 33
Collector current: 0.1A
товар відсутній
| RBR1MM30ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD123F
Max. forward voltage: 0.48V
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD123F
Max. forward voltage: 0.48V
Leakage current: 50µA
товар відсутній
| RBR3MM30ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD123F
Max. forward voltage: 0.51V
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD123F
Max. forward voltage: 0.51V
Leakage current: 0.1mA
товар відсутній
| RBR3LAM30ATFTR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.58V
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.58V
Leakage current: 50µA
товар відсутній
| RBR5LAM30ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 0.53V
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 0.53V
Leakage current: 0.1mA
товар відсутній
| US6K1TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.5A; Idm: 6A; 1W; TUMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.5A; Idm: 6A; 1W; TUMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| BD9778HFP-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7
Operating temperature: -40...125°C
Mounting: SMD
Output voltage: 1...35V DC
Output current: 2A
Type of integrated circuit: PMIC
Number of channels: 1
Input voltage: 7...35V DC
Frequency: 500MHz
Kind of integrated circuit: DC/DC converter
Case: HRP7
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7
Operating temperature: -40...125°C
Mounting: SMD
Output voltage: 1...35V DC
Output current: 2A
Type of integrated circuit: PMIC
Number of channels: 1
Input voltage: 7...35V DC
Frequency: 500MHz
Kind of integrated circuit: DC/DC converter
Case: HRP7
Topology: buck
товар відсутній
| SCS306AHGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 46W; TO220AC; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.71V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 170A
Leakage current: 120µA
Power dissipation: 46W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 46W; TO220AC; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.71V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 170A
Leakage current: 120µA
Power dissipation: 46W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
товар відсутній
| SCS306AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 22A
Semiconductor structure: single diode
Max. forward voltage: 1.71V
Case: TO220FP-2
Kind of package: tube
Leakage current: 120µA
Max. forward impulse current: 170A
Power dissipation: 30W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 22A
Semiconductor structure: single diode
Max. forward voltage: 1.71V
Case: TO220FP-2
Kind of package: tube
Leakage current: 120µA
Max. forward impulse current: 170A
Power dissipation: 30W
товар відсутній
| RCX160N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| RUC002N05HZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Pulsed drain current: 800A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SST3
On-state resistance: 7.2Ω
Gate-source voltage: ±8V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Pulsed drain current: 800A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SST3
On-state resistance: 7.2Ω
Gate-source voltage: ±8V
Mounting: SMD
товар відсутній
| RUC002N05T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Pulsed drain current: 800A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SST3
On-state resistance: 7.2Ω
Gate-source voltage: ±8V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Pulsed drain current: 800A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SST3
On-state resistance: 7.2Ω
Gate-source voltage: ±8V
Mounting: SMD
товар відсутній
| RUM002N05T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 4225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.62 грн |
| 33+ | 11.24 грн |
| 54+ | 6.89 грн |
| 100+ | 5.54 грн |
| 239+ | 3.61 грн |
| 658+ | 3.41 грн |
| 1000+ | 3.38 грн |
| QS5U34TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| US6K4TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; Idm: 3A; 1W; TUMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; Idm: 3A; 1W; TUMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| DAN202KT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
товар відсутній
| RF601BM2DFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.93V
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.93V
Max. forward impulse current: 60A
Kind of package: reel; tape
товар відсутній
| RF601BM2DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.93V
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.93V
Max. forward impulse current: 60A
Kind of package: reel; tape
на замовлення 1605 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.56 грн |
| 11+ | 35.86 грн |
| 25+ | 28.51 грн |
| 33+ | 26.47 грн |
| 89+ | 25.03 грн |
| 500+ | 24.1 грн |
| R6006JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 86W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 936mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 86W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 936mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 18A
товар відсутній
| EMN11T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT563; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double x2
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Max. forward impulse current: 4A
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT563; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double x2
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Max. forward impulse current: 4A
Type of diode: switching
товар відсутній
| EMP11T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT563; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Max. forward impulse current: 4A
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT563; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Max. forward impulse current: 4A
Type of diode: switching
товар відсутній
| EMT18T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 260MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 260MHz
товар відсутній
| EMT1T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
на замовлення 4355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.08 грн |
| 80+ | 4.78 грн |
| 100+ | 4.31 грн |
| 265+ | 3.25 грн |
| 725+ | 3.07 грн |
| EMX18T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
товар відсутній
| EMX1FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товар відсутній
| EMX1GT2R |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Frequency: 180MHz
Collector-emitter voltage: 50V
Collector current: 0.15A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Frequency: 180MHz
Collector-emitter voltage: 50V
Collector current: 0.15A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
товар відсутній
| EMX1T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товар відсутній
| EMX26T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN x2
Current gain: 820...2700
Frequency: 250MHz
Collector current: 0.15A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN x2
Current gain: 820...2700
Frequency: 250MHz
Collector current: 0.15A
товар відсутній
| EMX52T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 150mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN x2
Current gain: 120...560
Frequency: 350MHz
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 150mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN x2
Current gain: 120...560
Frequency: 350MHz
Collector current: 0.1A
товар відсутній
| RB168MM100TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.81V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.4µA
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.81V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.4µA
Max. forward impulse current: 40A
товар відсутній
| R6520KNX3C16 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SST4403HZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товар відсутній
| SST4403T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товар відсутній
| 2SCR502UBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.5A; 200mW; SOT323F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323F
Pulsed collector current: 1A
Current gain: 500
Mounting: SMD
Kind of package: reel; tape
Frequency: 360MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.5A; 200mW; SOT323F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323F
Pulsed collector current: 1A
Current gain: 500
Mounting: SMD
Kind of package: reel; tape
Frequency: 360MHz
товар відсутній
| RSQ020N03HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RUF025N02FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 5A
Drain-source voltage: 20V
Drain current: 2.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 5A
Drain-source voltage: 20V
Drain current: 2.5A
товар відсутній
| RUF025N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 5A
Drain-source voltage: 20V
Drain current: 2.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 5A
Drain-source voltage: 20V
Drain current: 2.5A
товар відсутній
| RQ5E035BNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 2SCR513P5T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
товар відсутній
| 2SCR513PFRAT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
товар відсутній
| 2SCR514P5T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 320MHz
Collector-emitter voltage: 80V
Current gain: 120...390
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 320MHz
Collector-emitter voltage: 80V
Current gain: 120...390
товар відсутній
| 2SCR514PFRAT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 320MHz
Collector-emitter voltage: 80V
Current gain: 120...390
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 320MHz
Collector-emitter voltage: 80V
Current gain: 120...390
товар відсутній
| 2SCR514RTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC96
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SC96
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.7A; 500mW; SC96
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SC96
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
товар відсутній
| 2SCR346PT100P |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Collector-emitter voltage: 400V
Current gain: 82...180
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Collector-emitter voltage: 400V
Current gain: 82...180
товар відсутній
| 2SCR346PT100Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Collector-emitter voltage: 400V
Current gain: 120...270
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Collector-emitter voltage: 400V
Current gain: 120...270
товар відсутній
| 2SCR293P5T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 320MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 320MHz
Collector-emitter voltage: 30V
Current gain: 270...680
товар відсутній
| SCT3060ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247
Mounting: THT
Drain-source voltage: 650V
Drain current: 39A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Technology: SiC
Kind of channel: enhanced
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247
Mounting: THT
Drain-source voltage: 650V
Drain current: 39A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Technology: SiC
Kind of channel: enhanced
Case: TO247
товар відсутній
| SCT3060ALHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247
Mounting: THT
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 97A
Case: TO247
Drain-source voltage: 650V
Drain current: 39A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247
Mounting: THT
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 97A
Case: TO247
Drain-source voltage: 650V
Drain current: 39A
товар відсутній
| SCT3060ARC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W
Mounting: THT
Drain-source voltage: 650V
Drain current: 39A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 58nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 97A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W
Mounting: THT
Drain-source voltage: 650V
Drain current: 39A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 58nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 97A
Case: TO247-4
товар відсутній
| SCT3060AW7TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W
Mounting: SMD
Drain-source voltage: 650V
Drain current: 38A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 159W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 95A
Case: TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W
Mounting: SMD
Drain-source voltage: 650V
Drain current: 38A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 159W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 95A
Case: TO263-7
товар відсутній
| SCT2450KEC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Case: TO247
Power dissipation: 85W
Polarisation: unipolar
Kind of package: tube
Gate charge: 27nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 25A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 7A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Case: TO247
Power dissipation: 85W
Polarisation: unipolar
Kind of package: tube
Gate charge: 27nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 25A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 7A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
товар відсутній
| SCT2750NYTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5.9A; Idm: 14A; 57W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5.9A
Pulsed drain current: 14A
Power dissipation: 57W
Case: TO268
Gate-source voltage: -6...22V
On-state resistance: 975mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5.9A; Idm: 14A; 57W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5.9A
Pulsed drain current: 14A
Power dissipation: 57W
Case: TO268
Gate-source voltage: -6...22V
On-state resistance: 975mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SCT2H12NYTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 44W; TO268
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 44W
Case: TO268
Gate-source voltage: -6...22V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 44W; TO268
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4A
Pulsed drain current: 10A
Power dissipation: 44W
Case: TO268
Gate-source voltage: -6...22V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SCT2H12NZGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Pulsed drain current: 9.2A
Power dissipation: 35W
Case: TO3PFM
Gate-source voltage: -6...22V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Pulsed drain current: 9.2A
Power dissipation: 35W
Case: TO3PFM
Gate-source voltage: -6...22V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| RGS80TS65DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
товар відсутній
| RGS80TSX2DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Mounting: THT
товар відсутній