Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99813) > Сторінка 1638 з 1664
Фото | Назва | Виробник | Інформація |
Доступність |
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UMD12NFHATR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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RK7002BMHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.35W Case: SST3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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SCS112AGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube Technology: SiC Mounting: THT Case: TO220AC Kind of package: tube Max. forward impulse current: 167A Load current: 12A Max. forward voltage: 1.7V Power dissipation: 93W Max. load current: 48A Type of diode: Schottky rectifying Max. off-state voltage: 0.6kV Heatsink thickness: max. 1.27mm Semiconductor structure: single diode |
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BAS40-06HYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A Type of diode: switching Mounting: SMD Max. off-state voltage: 40V Load current: 120mA x2 Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1V Max. load current: 120mA Max. forward impulse current: 0.6A Kind of package: reel; tape |
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QS8J13TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 58mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS8J2TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -4A Pulsed drain current: -12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 132mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS8J4TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Pulsed drain current: -16A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS8J5TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS8K11TCR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS8K13TCR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 18A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS8M31TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; Idm: 4÷6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 3/-2A Pulsed drain current: 4...6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 137/266mΩ Mounting: SMD Gate charge: 4/7.2nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 988 шт: термін постачання 21-30 дні (днів) |
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QS8M51FRATR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
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QS8M51TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
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BA033CC0FP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 1A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...25V |
на замовлення 1354 шт: термін постачання 21-30 дні (днів) |
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BA05CC0FP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2% Operating temperature: -40...125°C Mounting: SMD Case: TO252-3 Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Tolerance: ±2% Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 4...25V Output current: 1A Voltage drop: 0.3V |
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KDZVTR5.1B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 20µA |
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PDZVTR5.1B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA |
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TFZVTR5.1B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 500mW; 5.1V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323HE Mounting: SMD Semiconductor structure: single diode Leakage current: 5µA |
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CDZVT2R5.1B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode; 2uA Type of diode: Zener Power dissipation: 0.1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD923 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
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EDZVT2R5.1B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523F Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 5.1V Leakage current: 2µA Power dissipation: 0.15W Type of diode: Zener |
на замовлення 7800 шт: термін постачання 21-30 дні (днів) |
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R6009END3TL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252 Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Mounting: SMD Case: TO252 |
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R6009JND3TL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252 Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 585mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 27A Mounting: SMD Case: TO252 |
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R6009JNJGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 585mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 27A Mounting: SMD Case: D2PAK |
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R6009KNJTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Mounting: SMD Case: D2PAK |
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SCS220KE2C | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 280W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 94A Power dissipation: 280W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 320A Max. forward voltage: 1.9V |
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SCS220KE2GC11 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 270W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 94A Power dissipation: 270W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 320A Max. forward voltage: 1.9V Leakage current: 0.2mA |
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SCS220KGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 83A Power dissipation: 210W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 310A Max. forward voltage: 1.6V |
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SCS220KGC17 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 83A Power dissipation: 210W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 310A Max. forward voltage: 1.9V Leakage current: 0.4mA |
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R6012JNJGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 36A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
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R6012JNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP Power dissipation: 60W Polarisation: unipolar Kind of package: tube Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 36A Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 12A On-state resistance: 390mΩ Type of transistor: N-MOSFET |
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DTC123ECAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
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DTC123EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Frequency: 250MHz Kind of package: reel; tape Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Collector-emitter voltage: 50V Current gain: 20 Collector current: 0.1A Type of transistor: NPN |
на замовлення 1520 шт: термін постачання 21-30 дні (днів) |
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DTC123EKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
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DTC123EU3T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 10300 шт: термін постачання 21-30 дні (днів) |
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RSR010N10FHATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced |
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RSR010N10HZGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced |
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SH8MA4TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 9/-8.5A Pulsed drain current: 18A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 32.5/41.3mΩ Mounting: SMD Gate charge: 15.5/19.6nC Kind of package: reel; tape Kind of channel: enhanced |
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DTC144ECAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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DTC144ECAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 245 шт: термін постачання 21-30 дні (днів) |
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DTC144EEBTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC89 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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DTC144EEFRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 2560 шт: термін постачання 21-30 дні (днів) |
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DTC144EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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DTC144EKAT146 | ROHM SEMICONDUCTOR |
![]() ![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 460 шт: термін постачання 21-30 дні (днів) |
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DTC144EMFHAT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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DTC144EMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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DTC144EU3T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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DTC144GUAT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 47kΩ |
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2SA2094TLQ | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96 Kind of package: reel; tape Frequency: 300MHz Collector-emitter voltage: 60V Current gain: 120...270 Collector current: 2A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Mounting: SMD Case: SC96 |
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BZX84C10VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA Case: SOT23 Mounting: SMD Tolerance: ±6% Application: automotive industry Leakage current: 2µA Power dissipation: 0.25W Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Zener voltage: 10V |
товар відсутній |
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2SD1383KT146B | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT,Darlington; 32V; 0.3A; 200mW; 4kΩ Kind of package: reel; tape Collector current: 0.3A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Collector-emitter voltage: 32V Frequency: 250MHz Kind of transistor: BRT; Darlington Base-emitter resistor: 4kΩ Case: SC59; SOT346 Current gain: 5k Mounting: SMD |
на замовлення 2874 шт: термін постачання 21-30 дні (днів) |
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2SD1757KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346 Mounting: SMD Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Case: SC59; SOT346 Frequency: 150MHz Collector-emitter voltage: 15V Current gain: 270...560 Collector current: 0.5A Type of transistor: NPN |
товар відсутній |
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UMB10NFHATN | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Mounting: SMD Case: SC88; SOT363 Power dissipation: 0.15W Kind of package: reel; tape Current gain: 80 Collector current: 0.1A Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Collector-emitter voltage: 50V |
товар відсутній |
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UMN10NFHTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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BU2508FV-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C Power dissipation: 0.7W Case: SSOP-B14 Mounting: SMD Frequency: 10MHz Operating temperature: -30...85°C Max INL: ±3.5LSB Max DNL: ±1LSB DC supply current: 850mA Operating voltage: 4.5...5.5V Type of integrated circuit: D/A converter Interface: 3-wire Converter resolution: 10bit Number of channels: 4 Integrated circuit features: rail-to-rail |
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RBR40NS60AFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 20Ax2; D2PAK,SC83,TO263S Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Case: D2PAK; SC83; TO263S Max. forward voltage: 0.6V Leakage current: 0.8mA Max. forward impulse current: 100A Kind of package: reel; tape |
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DTC114EEFRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
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DTC114EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Frequency: 250MHz Kind of package: reel; tape Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: NPN |
на замовлення 2745 шт: термін постачання 21-30 дні (днів) |
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DTC114EKAT146 | ROHM SEMICONDUCTOR |
![]() ![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 155 шт: термін постачання 21-30 дні (днів) |
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DTC114EMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
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DTC114EU3HZGT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
UMD12NFHATR |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
RK7002BMHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SCS112AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Technology: SiC
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 167A
Load current: 12A
Max. forward voltage: 1.7V
Power dissipation: 93W
Max. load current: 48A
Type of diode: Schottky rectifying
Max. off-state voltage: 0.6kV
Heatsink thickness: max. 1.27mm
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Technology: SiC
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 167A
Load current: 12A
Max. forward voltage: 1.7V
Power dissipation: 93W
Max. load current: 48A
Type of diode: Schottky rectifying
Max. off-state voltage: 0.6kV
Heatsink thickness: max. 1.27mm
Semiconductor structure: single diode
товар відсутній
BAS40-06HYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1V
Max. load current: 120mA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1V
Max. load current: 120mA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
товар відсутній
QS8J13TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
QS8J2TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Pulsed drain current: -12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Pulsed drain current: -12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
QS8J4TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
QS8J5TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
QS8K11TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
QS8K13TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
QS8M31TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; Idm: 4÷6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3/-2A
Pulsed drain current: 4...6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 137/266mΩ
Mounting: SMD
Gate charge: 4/7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; Idm: 4÷6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3/-2A
Pulsed drain current: 4...6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 137/266mΩ
Mounting: SMD
Gate charge: 4/7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 988 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
43+ | 20.13 грн |
116+ | 19.04 грн |
QS8M51FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
QS8M51TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
BA033CC0FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...25V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...25V
на замовлення 1354 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 89.1 грн |
20+ | 43.93 грн |
54+ | 41.73 грн |
BA05CC0FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2%
Operating temperature: -40...125°C
Mounting: SMD
Case: TO252-3
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Tolerance: ±2%
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 4...25V
Output current: 1A
Voltage drop: 0.3V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2%
Operating temperature: -40...125°C
Mounting: SMD
Case: TO252-3
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Tolerance: ±2%
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 4...25V
Output current: 1A
Voltage drop: 0.3V
товар відсутній
KDZVTR5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
товар відсутній
PDZVTR5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
товар відсутній
TFZVTR5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
CDZVT2R5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
товар відсутній
EDZVT2R5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523F
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 2µA
Power dissipation: 0.15W
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523F
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 2µA
Power dissipation: 0.15W
Type of diode: Zener
на замовлення 7800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
72+ | 5.54 грн |
97+ | 3.81 грн |
116+ | 3.16 грн |
156+ | 2.36 грн |
500+ | 1.77 грн |
678+ | 1.26 грн |
1863+ | 1.19 грн |
R6009END3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Mounting: SMD
Case: TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Mounting: SMD
Case: TO252
товар відсутній
R6009JND3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: TO252
товар відсутній
R6009JNJGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
товар відсутній
R6009KNJTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
товар відсутній
SCS220KE2C |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 280W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 94A
Power dissipation: 280W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.9V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 280W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 94A
Power dissipation: 280W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.9V
товар відсутній
SCS220KE2GC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 270W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 94A
Power dissipation: 270W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.9V
Leakage current: 0.2mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 270W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 94A
Power dissipation: 270W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.9V
Leakage current: 0.2mA
товар відсутній
SCS220KGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 83A
Power dissipation: 210W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 310A
Max. forward voltage: 1.6V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 83A
Power dissipation: 210W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 310A
Max. forward voltage: 1.6V
товар відсутній
SCS220KGC17 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 83A
Power dissipation: 210W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 310A
Max. forward voltage: 1.9V
Leakage current: 0.4mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 83A
Power dissipation: 210W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 310A
Max. forward voltage: 1.9V
Leakage current: 0.4mA
товар відсутній
R6012JNJGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
R6012JNXC7G |
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 36A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 36A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
товар відсутній
DTC123ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
товар відсутній
DTC123EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: NPN
на замовлення 1520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
140+ | 3.11 грн |
160+ | 2.5 грн |
440+ | 2 грн |
1180+ | 1.89 грн |
DTC123EKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
товар відсутній
DTC123EU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 10300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
175+ | 2.12 грн |
500+ | 1.87 грн |
525+ | 1.68 грн |
1425+ | 1.6 грн |
RSR010N10FHATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
RSR010N10HZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SH8MA4TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/-8.5A
Pulsed drain current: 18A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 32.5/41.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/-8.5A
Pulsed drain current: 18A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 32.5/41.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DTC144ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
DTC144ECAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 245 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 2.71 грн |
165+ | 2.28 грн |
DTC144EEBTL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC89
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC89
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
DTC144EEFRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 2560 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
125+ | 3.15 грн |
155+ | 2.36 грн |
443+ | 1.94 грн |
1216+ | 1.83 грн |
DTC144EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
DTC144EKAT146 | ![]() |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 460 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
120+ | 3.43 грн |
140+ | 2.86 грн |
360+ | 2.41 грн |
DTC144EMFHAT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
DTC144EMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
DTC144EU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
DTC144GUAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
товар відсутній
2SA2094TLQ |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC96
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC96
товар відсутній
BZX84C10VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Application: automotive industry
Leakage current: 2µA
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 10V
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Application: automotive industry
Leakage current: 2µA
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 10V
товар відсутній
2SD1383KT146B |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT,Darlington; 32V; 0.3A; 200mW; 4kΩ
Kind of package: reel; tape
Collector current: 0.3A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Collector-emitter voltage: 32V
Frequency: 250MHz
Kind of transistor: BRT; Darlington
Base-emitter resistor: 4kΩ
Case: SC59; SOT346
Current gain: 5k
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT,Darlington; 32V; 0.3A; 200mW; 4kΩ
Kind of package: reel; tape
Collector current: 0.3A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Collector-emitter voltage: 32V
Frequency: 250MHz
Kind of transistor: BRT; Darlington
Base-emitter resistor: 4kΩ
Case: SC59; SOT346
Current gain: 5k
Mounting: SMD
на замовлення 2874 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 18.13 грн |
29+ | 12.96 грн |
100+ | 9.66 грн |
119+ | 7.18 грн |
326+ | 6.78 грн |
2SD1757KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC59; SOT346
Frequency: 150MHz
Collector-emitter voltage: 15V
Current gain: 270...560
Collector current: 0.5A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC59; SOT346
Frequency: 150MHz
Collector-emitter voltage: 15V
Current gain: 270...560
Collector current: 0.5A
Type of transistor: NPN
товар відсутній
UMB10NFHATN |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Power dissipation: 0.15W
Kind of package: reel; tape
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Power dissipation: 0.15W
Kind of package: reel; tape
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
товар відсутній
UMN10NFHTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
товар відсутній
BU2508FV-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: D/A converters - integrated circuits
Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C
Power dissipation: 0.7W
Case: SSOP-B14
Mounting: SMD
Frequency: 10MHz
Operating temperature: -30...85°C
Max INL: ±3.5LSB
Max DNL: ±1LSB
DC supply current: 850mA
Operating voltage: 4.5...5.5V
Type of integrated circuit: D/A converter
Interface: 3-wire
Converter resolution: 10bit
Number of channels: 4
Integrated circuit features: rail-to-rail
Category: D/A converters - integrated circuits
Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C
Power dissipation: 0.7W
Case: SSOP-B14
Mounting: SMD
Frequency: 10MHz
Operating temperature: -30...85°C
Max INL: ±3.5LSB
Max DNL: ±1LSB
DC supply current: 850mA
Operating voltage: 4.5...5.5V
Type of integrated circuit: D/A converter
Interface: 3-wire
Converter resolution: 10bit
Number of channels: 4
Integrated circuit features: rail-to-rail
товар відсутній
RBR40NS60AFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 20Ax2; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: D2PAK; SC83; TO263S
Max. forward voltage: 0.6V
Leakage current: 0.8mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 20Ax2; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: D2PAK; SC83; TO263S
Max. forward voltage: 0.6V
Leakage current: 0.8mA
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
DTC114EEFRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
DTC114EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN
на замовлення 2745 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 7.88 грн |
61+ | 6 грн |
83+ | 4.45 грн |
94+ | 3.92 грн |
106+ | 3.48 грн |
448+ | 1.91 грн |
1231+ | 1.81 грн |
DTC114EKAT146 | ![]() |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 155 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
106+ | 3.75 грн |
120+ | 3.06 грн |
DTC114EMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
DTC114EU3HZGT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній