Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99378) > Сторінка 1644 з 1657
| Фото | Назва | Виробник | Інформація |
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| SCT3040KW7TL | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 56A Pulsed drain current: 140A Power dissipation: 267W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 52mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhanced |
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| SCT3080ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced |
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| SCT3080ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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| SCT3105KRC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Mounting: THT Kind of package: tube Power dissipation: 134W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 60A Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 137mΩ Type of transistor: N-MOSFET |
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| SCT3120ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 52A Power dissipation: 103W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 156mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
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SCT3160KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Mounting: THT Case: TO247 Kind of package: tube On-state resistance: 0.16Ω Power dissipation: 103W Drain-source voltage: 1.2kV Drain current: 17A Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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RB160VAM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SOD323HE Leakage current: 50µA Max. forward impulse current: 10A |
на замовлення 1250 шт: термін постачання 21-30 дні (днів) |
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RB160VAM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.67V Case: SOD323HE Kind of package: reel; tape Max. forward impulse current: 5A |
на замовлення 2605 шт: термін постачання 21-30 дні (днів) |
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| RB160VYM-40FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SOD323HE Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 10A |
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| RB160VYM-60FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.67V Case: SOD323HE Kind of package: reel; tape Max. forward impulse current: 10A |
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SST4401HZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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SST4401T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23 Mounting: SMD Case: SOT23 Frequency: 250MHz Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Type of transistor: NPN Current gain: 20...300 Collector current: 0.6A Collector-emitter voltage: 40V |
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RRD07MM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.7A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.98V Max. forward impulse current: 150A Kind of package: reel; tape |
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| RD3P100SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 20A Power dissipation: 20W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 147mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| RFU02VSM8STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 1A Semiconductor structure: single diode Case: SOD323HE Mounting: SMD Kind of package: reel; tape Reverse recovery time: 35ns Max. forward voltage: 3V Load current: 0.2A |
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| STZ6.8NT146 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SC59; SOT346 Semiconductor structure: common anode; double Leakage current: 0.5µA |
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KDZVTR6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA |
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| CDZVT2R6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 6.8V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 6.8V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode Leakage current: 0.5µA |
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KDZVTFTR6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA |
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| UDZVTE-176.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 0.5µA |
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UDZVFHTE-176.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 0.5µA |
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RB061QS-20T18R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD882; reel,tape Case: SOD882 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 20V Load current: 2A Leakage current: 0.2mA Type of diode: Schottky rectifying Max. forward impulse current: 15A Max. forward voltage: 0.47V |
на замовлення 14484 шт: термін постачання 21-30 дні (днів) |
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| RB061US-30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; TSMD8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: double independent Max. forward voltage: 0.4V Case: TSMD8 Kind of package: reel; tape Leakage current: 0.9mA Max. forward impulse current: 8A |
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RF01VM2SFHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V Case: SC90A; SOD323F Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 250V Reverse recovery time: 50ns Type of diode: rectifying Max. forward impulse current: 1A Load current: 0.1A Max. forward voltage: 1.2V Max. load current: 0.3A |
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RF01VM2STE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V Case: SC90A; SOD323F Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 250V Reverse recovery time: 50ns Type of diode: rectifying Max. forward impulse current: 1A Load current: 0.1A Max. forward voltage: 1.2V Max. load current: 0.3A |
на замовлення 2280 шт: термін постачання 21-30 дні (днів) |
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RB501SM-30FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape Kind of package: reel; tape Mounting: SMD Max. forward impulse current: 1A Max. forward voltage: 0.35V Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Leakage current: 10µA Case: SC79; SOD523 Type of diode: Schottky rectifying |
на замовлення 3900 шт: термін постачання 21-30 дні (днів) |
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RB501VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape Case: SOD323F Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 1A Max. forward voltage: 0.55V Max. off-state voltage: 40V Load current: 0.1A Semiconductor structure: single diode Leakage current: 30µA Type of diode: Schottky rectifying |
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SML-211UTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0805; red; 0.9÷2.5mcd; 2x1.25x0.8mm; 1.8V; 2mA; Front: flat Operating voltage: 1.8V LED colour: red Type of diode: LED Wavelength: 615...625nm LED lens: transparent Luminosity: 0.9...2.5mcd LED current: 2mA Dimensions: 2x1.25x0.8mm Front: flat Mounting: SMD Case: 0805 |
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| RB496KATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOT353T; reel,tape Mounting: SMD Case: SOT353T Kind of package: reel; tape Semiconductor structure: double independent Leakage current: 0.8mA Type of diode: Schottky rectifying Max. forward impulse current: 5A Max. forward voltage: 0.43V Max. off-state voltage: 20V Load current: 1A |
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| RS1P600BETB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 70A Power dissipation: 35W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
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KDZVTFTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD123F Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA |
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RB161QS-40T18R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD882; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Max. load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: SOD882 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 7A |
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QST9TR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
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QST8TR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 1.5A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
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| QS6U24TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -1A Pulsed drain current: -2A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced |
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| QS6U22TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
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QS5U13TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS5U33TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS5U21TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS5U23TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS5U26TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS5U27TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QSH29TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 1.25W Case: SC74; SOT457 Current gain: 500 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ |
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QS5U12TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS5U17TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS5U28TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 245mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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RB510SM-30FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Case: SC79; SOD523 Kind of package: reel; tape Max. forward impulse current: 0.5A Max. forward voltage: 0.46V Leakage current: 0.3µA |
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RB510SM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Case: SC79; SOD523 Kind of package: reel; tape Max. forward impulse current: 0.5A Max. forward voltage: 0.46V Leakage current: 0.3µA |
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RB510SM-40FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.1A Semiconductor structure: single diode Case: SC79; SOD523 Kind of package: reel; tape Max. forward impulse current: 0.5A Max. forward voltage: 0.48V Leakage current: 2µA |
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RB510VM-30FHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD323F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Case: SOD323F Kind of package: reel; tape Max. forward impulse current: 0.5A Max. forward voltage: 0.46V Leakage current: 0.3µA |
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RB461FT106 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 0.7A; SC70,SOT323; reel,tape Mounting: SMD Case: SC70; SOT323 Kind of package: reel; tape Load current: 0.7A Semiconductor structure: single diode Max. forward impulse current: 3A Leakage current: 0.2mA Type of diode: Schottky rectifying Max. off-state voltage: 20V Max. forward voltage: 0.49V |
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DTB123TCHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SOT23; 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 40V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ |
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DTB123TCT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SOT23; 2.2kΩ Mounting: SMD Case: SOT23 Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Frequency: 200MHz Collector-emitter voltage: 40V Current gain: 100...600 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar |
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| HP8KA1TB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 28A Power dissipation: 3W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain |
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DTC124XKAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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DTC144TUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ |
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DTC144WUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
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| 2SAR502EBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.2W Case: SC89 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 520MHz |
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2SAR502U3HZGT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 520MHz |
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| 2SC5661T2LP | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.15W Case: SOT723 Current gain: 82...180 Mounting: SMD Kind of package: reel; tape Frequency: 1.5GHz |
товар відсутній |
| SCT3040KW7TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 56A
Pulsed drain current: 140A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 56A
Pulsed drain current: 140A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SCT3080ALGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SCT3080ARC14 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| SCT3105KRC14 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Mounting: THT
Kind of package: tube
Power dissipation: 134W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 60A
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Mounting: THT
Kind of package: tube
Power dissipation: 134W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 60A
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
товар відсутній
| SCT3120ALGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SCT3160KLGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
Case: TO247
Kind of package: tube
On-state resistance: 0.16Ω
Power dissipation: 103W
Drain-source voltage: 1.2kV
Drain current: 17A
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
Case: TO247
Kind of package: tube
On-state resistance: 0.16Ω
Power dissipation: 103W
Drain-source voltage: 1.2kV
Drain current: 17A
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1119.7 грн |
| 2+ | 710.53 грн |
| 4+ | 671.59 грн |
| RB160VAM-40TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Leakage current: 50µA
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Leakage current: 50µA
Max. forward impulse current: 10A
на замовлення 1250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 6.17 грн |
| 80+ | 4.61 грн |
| 230+ | 3.7 грн |
| 633+ | 3.5 грн |
| RB160VAM-60TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Case: SOD323HE
Kind of package: reel; tape
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Case: SOD323HE
Kind of package: reel; tape
Max. forward impulse current: 5A
на замовлення 2605 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.34 грн |
| 80+ | 4.64 грн |
| 100+ | 4.09 грн |
| 235+ | 3.65 грн |
| 640+ | 3.45 грн |
| 1500+ | 3.42 грн |
| RB160VYM-40FHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 10A
товар відсутній
| RB160VYM-60FHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Case: SOD323HE
Kind of package: reel; tape
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Case: SOD323HE
Kind of package: reel; tape
Max. forward impulse current: 10A
товар відсутній
| SST4401HZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товар відсутній
| SST4401T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 20...300
Collector current: 0.6A
Collector-emitter voltage: 40V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 20...300
Collector current: 0.6A
Collector-emitter voltage: 40V
товар відсутній
| RRD07MM4STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.7A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.98V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.7A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.98V
Max. forward impulse current: 150A
Kind of package: reel; tape
товар відсутній
| RD3P100SNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RFU02VSM8STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward voltage: 3V
Load current: 0.2A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward voltage: 3V
Load current: 0.2A
товар відсутній
| STZ6.8NT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Semiconductor structure: common anode; double
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Semiconductor structure: common anode; double
Leakage current: 0.5µA
товар відсутній
| KDZVTR6.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
товар відсутній
| CDZVT2R6.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 6.8V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 6.8V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| KDZVTFTR6.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
товар відсутній
| UDZVTE-176.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| UDZVFHTE-176.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| RB061QS-20T18R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD882; reel,tape
Case: SOD882
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 20V
Load current: 2A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. forward impulse current: 15A
Max. forward voltage: 0.47V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD882; reel,tape
Case: SOD882
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 20V
Load current: 2A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. forward impulse current: 15A
Max. forward voltage: 0.47V
на замовлення 14484 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.34 грн |
| 45+ | 8.38 грн |
| 100+ | 7.42 грн |
| 130+ | 6.75 грн |
| 350+ | 6.38 грн |
| 3000+ | 6.17 грн |
| RB061US-30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; TSMD8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: double independent
Max. forward voltage: 0.4V
Case: TSMD8
Kind of package: reel; tape
Leakage current: 0.9mA
Max. forward impulse current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; TSMD8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: double independent
Max. forward voltage: 0.4V
Case: TSMD8
Kind of package: reel; tape
Leakage current: 0.9mA
Max. forward impulse current: 8A
товар відсутній
| RF01VM2SFHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Type of diode: rectifying
Max. forward impulse current: 1A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Type of diode: rectifying
Max. forward impulse current: 1A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 0.3A
товар відсутній
| RF01VM2STE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Type of diode: rectifying
Max. forward impulse current: 1A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Type of diode: rectifying
Max. forward impulse current: 1A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 0.3A
на замовлення 2280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.35 грн |
| 120+ | 3.51 грн |
| 320+ | 2.78 грн |
| 860+ | 2.63 грн |
| RB501SM-30FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape
Kind of package: reel; tape
Mounting: SMD
Max. forward impulse current: 1A
Max. forward voltage: 0.35V
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 10µA
Case: SC79; SOD523
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape
Kind of package: reel; tape
Mounting: SMD
Max. forward impulse current: 1A
Max. forward voltage: 0.35V
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 10µA
Case: SC79; SOD523
Type of diode: Schottky rectifying
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.58 грн |
| 200+ | 1.88 грн |
| 500+ | 1.67 грн |
| 600+ | 1.45 грн |
| 1600+ | 1.37 грн |
| RB501VM-40TE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 30µA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 30µA
Type of diode: Schottky rectifying
товар відсутній
| SML-211UTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0805; red; 0.9÷2.5mcd; 2x1.25x0.8mm; 1.8V; 2mA; Front: flat
Operating voltage: 1.8V
LED colour: red
Type of diode: LED
Wavelength: 615...625nm
LED lens: transparent
Luminosity: 0.9...2.5mcd
LED current: 2mA
Dimensions: 2x1.25x0.8mm
Front: flat
Mounting: SMD
Case: 0805
Category: SMD colour LEDs
Description: LED; SMD; 0805; red; 0.9÷2.5mcd; 2x1.25x0.8mm; 1.8V; 2mA; Front: flat
Operating voltage: 1.8V
LED colour: red
Type of diode: LED
Wavelength: 615...625nm
LED lens: transparent
Luminosity: 0.9...2.5mcd
LED current: 2mA
Dimensions: 2x1.25x0.8mm
Front: flat
Mounting: SMD
Case: 0805
товар відсутній
| RB496KATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOT353T; reel,tape
Mounting: SMD
Case: SOT353T
Kind of package: reel; tape
Semiconductor structure: double independent
Leakage current: 0.8mA
Type of diode: Schottky rectifying
Max. forward impulse current: 5A
Max. forward voltage: 0.43V
Max. off-state voltage: 20V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOT353T; reel,tape
Mounting: SMD
Case: SOT353T
Kind of package: reel; tape
Semiconductor structure: double independent
Leakage current: 0.8mA
Type of diode: Schottky rectifying
Max. forward impulse current: 5A
Max. forward voltage: 0.43V
Max. off-state voltage: 20V
Load current: 1A
товар відсутній
| RS1P600BETB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 70A
Power dissipation: 35W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 70A
Power dissipation: 35W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| KDZVTFTR5.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
товар відсутній
| RB161QS-40T18R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD882; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD882
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD882; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD882
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 7A
товар відсутній
| QST9TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
товар відсутній
| QST8TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
товар відсутній
| QS6U24TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1A
Pulsed drain current: -2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1A
Pulsed drain current: -2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| QS6U22TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| QS5U13TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS5U33TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS5U21TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS5U23TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS5U26TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS5U27TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QSH29TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC74; SOT457
Current gain: 500
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC74; SOT457
Current gain: 500
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
товар відсутній
| QS5U12TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS5U17TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS5U28TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| RB510SM-30FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.46V
Leakage current: 0.3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.46V
Leakage current: 0.3µA
товар відсутній
| RB510SM-30T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.46V
Leakage current: 0.3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.46V
Leakage current: 0.3µA
товар відсутній
| RB510SM-40FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.48V
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.48V
Leakage current: 2µA
товар відсутній
| RB510VM-30FHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD323F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.46V
Leakage current: 0.3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD323F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.46V
Leakage current: 0.3µA
товар відсутній
| RB461FT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.7A; SC70,SOT323; reel,tape
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.49V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.7A; SC70,SOT323; reel,tape
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.49V
товар відсутній
| DTB123TCHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SOT23; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SOT23; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
товар відсутній
| DTB123TCT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SOT23; 2.2kΩ
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 40V
Current gain: 100...600
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SOT23; 2.2kΩ
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 40V
Current gain: 100...600
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
товар відсутній
| HP8KA1TB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 28A
Power dissipation: 3W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 28A
Power dissipation: 3W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
товар відсутній
| DTC124XKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| DTC144TUAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
товар відсутній
| DTC144WUAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| 2SAR502EBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC89
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC89
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
товар відсутній
| 2SAR502U3HZGT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
товар відсутній
| 2SC5661T2LP |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.15W
Case: SOT723
Current gain: 82...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.15W
Case: SOT723
Current gain: 82...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
товар відсутній