Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99813) > Сторінка 1640 з 1664
| Фото | Назва | Виробник | Інформація |
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| RGPR30BM40HRTL | ROHM SEMICONDUCTOR |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 430V; 30A; 125W; TO252 Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 30A Power dissipation: 125W Case: TO252 Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 1µs Turn-off time: 9.5µs Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems |
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| RGT16BM65DTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: TO252 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode |
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| RGT8BM65DTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 31W; TO252 Case: TO252 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 12A Turn-on time: 54ns Turn-off time: 158ns Type of transistor: IGBT Power dissipation: 31W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 13.5nC Mounting: SMD |
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| RGCL80TS60DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 74W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 98nC Kind of package: tube Turn-on time: 114ns Turn-off time: 565ns Features of semiconductor devices: integrated anti-parallel diode |
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RB068L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; DO214AC,SMA; reel,tape Case: DO214AC; SMA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 50A Leakage current: 1µA Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.69V Load current: 2A Semiconductor structure: single diode |
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RB068L100DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; DO214AC,SMA; reel,tape Mounting: SMD Case: DO214AC; SMA Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.79V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 110A Leakage current: 3µA |
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| RB068LAM-30TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.7V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 0.8µA |
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| RB068LAM-40TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.69V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 1µA |
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| RB068LAM-60TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.68V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 2µA |
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| RB068LAM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.68V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 2µA |
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| RB068LAM100TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.81V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 1.5µA |
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| RB068LAM100TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.81V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 1.5µA |
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| RB068LAM150TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 2A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 150V Max. forward voltage: 0.81V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 3µA |
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| RB068LAM150TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 2A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 150V Max. forward voltage: 0.81V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 3µA |
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RB068MM-30TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.7V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 0.8µA |
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RB068MM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.725V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 0.55µA |
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RB068MM-60TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.765V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 1.5µA |
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RB068MM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.765V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 1.5µA |
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RB068MM100TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.87V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 0.4µA |
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RB068MM100TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.87V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 0.4µA |
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| SCS320AHGC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA Type of diode: Schottky rectifying Power dissipation: 115W Max. off-state voltage: 650V Max. forward impulse current: 0.45kA Semiconductor structure: single diode Case: TO220AC Mounting: THT Leakage current: 0.4mA Kind of package: tube Technology: SiC Max. load current: 81A Max. forward voltage: 1.71V Load current: 20A |
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| SCS320AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 41W; TO220FP-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 46A Power dissipation: 41W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 0.45kA Max. forward voltage: 1.71V Leakage current: 0.4mA |
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| RB225T-60HZC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN Mounting: THT Case: ITO220AB; TO220FN Max. off-state voltage: 60V Max. forward voltage: 0.63V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.6mA Kind of package: tube Type of diode: Schottky rectifying |
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DTC124ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124ECAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 775 шт: термін постачання 21-30 дні (днів) |
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| DTC124EETL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124EKAT146 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 2205 шт: термін постачання 21-30 дні (днів) |
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| DTC124EMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124EU3HZGT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124EU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124EUAFRAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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| DTC124EUBTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323F Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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| DTC124TMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ |
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DTC124TUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ |
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DTC124XCAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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DTC124XCAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
на замовлення 974 шт: термін постачання 21-30 дні (днів) |
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| DTC124XEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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2SC4061KT146N | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Case: SC59; SOT346 Frequency: 100MHz Collector-emitter voltage: 300V Current gain: 56...120 Collector current: 0.1A Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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DTA124XCAHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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DTA124XCAT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.2W Polarisation: bipolar Frequency: 250MHz Kind of package: reel; tape Case: SOT23 Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A Type of transistor: PNP |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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| DTA124XEFRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Frequency: 250MHz Kind of package: reel; tape Case: SC75A; SOT416 Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A Type of transistor: PNP |
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DTA124XKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.2W Polarisation: bipolar Frequency: 250MHz Kind of package: reel; tape Case: SC59; SOT346 Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A Type of transistor: PNP |
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| DTA124XMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Frequency: 250MHz Kind of package: reel; tape Case: SOT723 Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A Type of transistor: PNP |
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| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| RD3G01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -15A On-state resistance: 49mΩ Type of transistor: P-MOSFET |
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| RD3G03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET |
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| RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -70A On-state resistance: 8.7mΩ Type of transistor: P-MOSFET |
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| RD3L01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Power dissipation: 26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -10A On-state resistance: 93mΩ Type of transistor: P-MOSFET |
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| RD3L03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -35A On-state resistance: 46mΩ Type of transistor: P-MOSFET |
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| RD3L07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -70A On-state resistance: 14.1mΩ Type of transistor: P-MOSFET |
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| RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 40V Drain current: 120A On-state resistance: 2.08mΩ Type of transistor: N-MOSFET |
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| RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 192W Polarisation: unipolar Gate charge: 175nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 60V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET |
товар відсутній |
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| RJ1P12BBDTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
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| EM6J1T2R | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 0.2A Pulsed drain current: -0.8A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 9.6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
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| QS6J1TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| UM6J1NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.2A Pulsed drain current: -400mA Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| US6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -1.3A Pulsed drain current: -5.2A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±10V On-state resistance: 1.06Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| RCJ120N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 200V Drain current: 12A On-state resistance: 0.79Ω Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A |
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| RCJ160N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 85W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
| RGPR30BM40HRTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 30A; 125W; TO252
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 30A
Power dissipation: 125W
Case: TO252
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Turn-on time: 1µs
Turn-off time: 9.5µs
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 30A; 125W; TO252
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 30A
Power dissipation: 125W
Case: TO252
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Turn-on time: 1µs
Turn-off time: 9.5µs
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
товар відсутній
| RGT16BM65DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO252
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO252
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| RGT8BM65DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 31W; TO252
Case: TO252
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 8A
Pulsed collector current: 12A
Turn-on time: 54ns
Turn-off time: 158ns
Type of transistor: IGBT
Power dissipation: 31W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 13.5nC
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 31W; TO252
Case: TO252
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 8A
Pulsed collector current: 12A
Turn-on time: 54ns
Turn-off time: 158ns
Type of transistor: IGBT
Power dissipation: 31W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 13.5nC
Mounting: SMD
товар відсутній
| RGCL80TS60DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 74W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 74W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| RB068L-40DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; DO214AC,SMA; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Leakage current: 1µA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.69V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; DO214AC,SMA; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Leakage current: 1µA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.69V
Load current: 2A
Semiconductor structure: single diode
товар відсутній
| RB068L100DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; DO214AC,SMA; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Leakage current: 3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; DO214AC,SMA; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Leakage current: 3µA
товар відсутній
| RB068LAM-30TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.8µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.8µA
товар відсутній
| RB068LAM-40TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.69V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.69V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 1µA
товар відсутній
| RB068LAM-60TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 2µA
товар відсутній
| RB068LAM-60TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 2µA
товар відсутній
| RB068LAM100TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.81V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 1.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.81V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 1.5µA
товар відсутній
| RB068LAM100TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.81V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 1.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.81V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 1.5µA
товар відсутній
| RB068LAM150TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.81V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.81V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 3µA
товар відсутній
| RB068LAM150TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.81V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 2A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.81V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 3µA
товар відсутній
| RB068MM-30TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.8µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.8µA
товар відсутній
| RB068MM-40TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.725V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.55µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.725V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.55µA
товар відсутній
| RB068MM-60TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.765V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 1.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.765V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 1.5µA
товар відсутній
| RB068MM-60TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.765V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 1.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.765V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 1.5µA
товар відсутній
| RB068MM100TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
товар відсутній
| RB068MM100TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
товар відсутній
| SCS320AHGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA
Type of diode: Schottky rectifying
Power dissipation: 115W
Max. off-state voltage: 650V
Max. forward impulse current: 0.45kA
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Leakage current: 0.4mA
Kind of package: tube
Technology: SiC
Max. load current: 81A
Max. forward voltage: 1.71V
Load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA
Type of diode: Schottky rectifying
Power dissipation: 115W
Max. off-state voltage: 650V
Max. forward impulse current: 0.45kA
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Leakage current: 0.4mA
Kind of package: tube
Technology: SiC
Max. load current: 81A
Max. forward voltage: 1.71V
Load current: 20A
товар відсутній
| SCS320AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 41W; TO220FP-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 46A
Power dissipation: 41W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 0.45kA
Max. forward voltage: 1.71V
Leakage current: 0.4mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 41W; TO220FP-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 46A
Power dissipation: 41W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 0.45kA
Max. forward voltage: 1.71V
Leakage current: 0.4mA
товар відсутній
| RB225T-60HZC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN
Mounting: THT
Case: ITO220AB; TO220FN
Max. off-state voltage: 60V
Max. forward voltage: 0.63V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.6mA
Kind of package: tube
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN
Mounting: THT
Case: ITO220AB; TO220FN
Max. off-state voltage: 60V
Max. forward voltage: 0.63V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.6mA
Kind of package: tube
Type of diode: Schottky rectifying
товар відсутній
| DTC124ECAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124ECAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.1 грн |
| 500+ | 1.86 грн |
| 550+ | 1.61 грн |
| DTC124EETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EKAT146 | |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 2205 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.9 грн |
| 155+ | 2.43 грн |
| 415+ | 2.09 грн |
| 1140+ | 1.97 грн |
| DTC124EMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EU3HZGT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EU3T106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EUAFRAT106 |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EUBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323F
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323F
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124TMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
товар відсутній
| DTC124TUAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
товар відсутній
| DTC124XCAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| DTC124XCAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
на замовлення 974 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.1 грн |
| 500+ | 1.86 грн |
| 550+ | 1.61 грн |
| DTC124XEFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| 2SC4061KT146N |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Case: SC59; SOT346
Frequency: 100MHz
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Case: SC59; SOT346
Frequency: 100MHz
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.83 грн |
| 45+ | 8.71 грн |
| 100+ | 7.69 грн |
| 125+ | 6.9 грн |
| 345+ | 6.53 грн |
| 3000+ | 6.37 грн |
| DTA124XCAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| DTA124XCAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SOT23
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SOT23
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
на замовлення 950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.1 грн |
| 500+ | 1.86 грн |
| 525+ | 1.65 грн |
| DTA124XEFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SC75A; SOT416
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SC75A; SOT416
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
товар відсутній
| DTA124XKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SC59; SOT346
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SC59; SOT346
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
товар відсутній
| DTA124XMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SOT723
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SOT723
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
товар відсутній
| RHU002N06FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RD3G01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3G03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3G07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
товар відсутній
| RJ1G12BGNTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
товар відсутній
| RJ1L12BGNTLL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| RJ1P12BBDTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| EM6J1T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS6J11TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS6J1TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| UM6J1NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| US6J11TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| RCJ120N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
товар відсутній
| RCJ160N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній