Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99380) > Сторінка 1642 з 1657
| Фото | Назва | Виробник | Інформація |
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| RGS80TSX2HRC11 | ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Gate charge: 104nC Mounting: THT |
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| RB481KTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC82,SOT343; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double independent Max. forward voltage: 0.5V Case: SC82; SOT343 Kind of package: reel; tape Leakage current: 30µA Max. forward impulse current: 1A |
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BCX17HZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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BCX17T116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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KDZVTR4.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 4.3V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA |
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| EMG2T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ Mounting: SMD Case: SOT553 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.15W |
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FMG2AT148 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT25 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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| UMG2NTR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Mounting: SMD Case: SC88A; SOT353 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.15W |
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| UMG5NTR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Mounting: SMD Case: SC88A; SOT353 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.15W |
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SML-D12D8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW Type of diode: LED Mounting: SMD Case: 0603 LED colour: orange Luminosity: 40...100mcd Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 602...608nm LED lens: transparent Power: 54mW Front: flat Manufacturer series: EXCELED™ Operating voltage: 2.2V |
на замовлення 2998 шт: термін постачання 21-30 дні (днів) |
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| 2SB1709TL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96 Case: SC96 Mounting: SMD Frequency: 400MHz Kind of package: reel; tape Power dissipation: 0.5W Collector-emitter voltage: 12V Collector current: 1.5A Current gain: 270...680 Type of transistor: PNP Polarisation: bipolar |
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| R6004END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 8A Power dissipation: 59W Case: TO252 Gate-source voltage: ±20V On-state resistance: 1.36Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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| R6004JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 12A Power dissipation: 60W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.43Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSR015P06FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V |
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| RSR015P06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V |
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| CDZVT2R9.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 9.1V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 9.1V Leakage current: 0.5µA |
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| YFZVFHTR9.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 9.1V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323HE Mounting: SMD Semiconductor structure: single diode Leakage current: 0.5µA |
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| UDZVTE-179.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
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| UDZVFHTE-179.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
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| R6006KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 70W Drain-source voltage: 600V Drain current: 6A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A |
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| SCT3160KW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W Type of transistor: N-MOSFET Technology: SiC Mounting: SMD Case: TO263-7 Kind of package: reel; tape On-state resistance: 208mΩ Power dissipation: 100W Drain-source voltage: 1.2kV Drain current: 17A Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 42A |
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| DAN217UMFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323F Max. forward voltage: 1.2V Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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| DAN217UMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323F Max. forward voltage: 1.2V Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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DAN217UT106 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC70,SOT323; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SC70; SOT323 Max. forward voltage: 1.2V Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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SH8KA2GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 16A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| 2SB1707TL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96 Kind of package: reel; tape Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 4A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Mounting: SMD Case: SC96 Frequency: 250MHz |
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| RGT16NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: TO263 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode |
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| RGT16NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; LPDS Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: LPDS Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode |
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| RQ3G150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8 Power dissipation: 20W Case: HSMT8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Gate charge: 24.1nC Polarisation: unipolar Drain current: 39A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.9mΩ |
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| 2SA2030T2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723 Kind of package: reel; tape Frequency: 260MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Mounting: SMD Case: SOT723 |
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2SD2114KT146W | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Pulsed collector current: 1A Current gain: 2700 Mounting: SMD Kind of package: reel; tape Frequency: 350MHz |
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2SD2142KT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 10k Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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2SD2153T100V | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 2A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 2A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 820...1800 Mounting: SMD Kind of package: reel; tape Frequency: 110MHz |
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| RBR15BM30AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 7.5Ax2; DPAK,SC63,TO252 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 7.5A x2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Max. forward impulse current: 100A Max. forward voltage: 0.51V Leakage current: 0.2mA |
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| RBQ30NS45BTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 30A; D2PAK,SC83,TO263S Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 30A Semiconductor structure: single diode Case: D2PAK; SC83; TO263S Kind of package: reel; tape Max. forward impulse current: 100A Max. forward voltage: 0.59V Leakage current: 0.35mA |
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| RBQ30TB45BNZC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30A; ITO220AC,TO220FN; tube Case: ITO220AC; TO220FN Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 45V Type of diode: Schottky rectifying Load current: 30A Max. forward voltage: 0.59V Leakage current: 0.35mA Max. forward impulse current: 100A |
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IMD2AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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IMD9AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Frequency: 250MHz Mounting: SMD Base-emitter resistor: 47kΩ Case: SC74; SOT457 Collector-emitter voltage: 50V Current gain: 68 Collector current: 0.1A Type of transistor: NPN / PNP Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 10kΩ |
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IMH5AT108 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Mounting: SMD Base-emitter resistor: 22kΩ Case: SC74; SOT457 Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 22kΩ |
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IMZ1AT108 | ROHM SEMICONDUCTOR |
 Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Frequency: 180MHz Mounting: SMD Case: SC74; SOT457 Collector-emitter voltage: 50V Collector current: 0.15A Type of transistor: NPN / PNP Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: complementary pair |
на замовлення 2934 шт: термін постачання 21-30 дні (днів) |
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IMD10AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Frequency: 200MHz; 250MHz Mounting: SMD Base-emitter resistor: 10kΩ Case: SC74; SOT457 Collector-emitter voltage: 50V Current gain: 68...600 Collector current: 0.5/0.1A Type of transistor: NPN / PNP Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 0.1/10kΩ |
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IMD16AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Frequency: 250MHz Mounting: SMD Base-emitter resistor: 22kΩ Case: SC74; SOT457 Collector-emitter voltage: 50V Current gain: 82...600 Collector current: 0.5/0.1A Type of transistor: NPN / PNP Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 2.2/100kΩ |
на замовлення 1220 шт: термін постачання 21-30 дні (днів) |
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| RB706UM-40TL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOT323F; reel,tape Mounting: SMD Max. forward impulse current: 0.2A Leakage current: 1µA Case: SOT323F Kind of package: reel; tape Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: double series Type of diode: Schottky rectifying Max. forward voltage: 0.37V |
на замовлення 2989 шт: термін постачання 21-30 дні (днів) |
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2SCR586D3TL1 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 10W Case: DPAK; TO252 Current gain: 120...390 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 793 шт: термін постачання 21-30 дні (днів) |
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| SML-P11UTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm Mounting: SMD Case: 0402 Operating voltage: 1.8V Dimensions: 1x0.6x0.2mm Wavelength: 616...626nm LED lens: transparent Luminosity: 1...2.5mcd LED current: 1mA Front: flat Power: 50mW LED colour: red Type of diode: LED |
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SML-P11UTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm Mounting: SMD Case: 0402 Operating voltage: 1.8V Dimensions: 1x0.6x0.2mm Wavelength: 616...626nm LED lens: transparent Luminosity: 1...2.5mcd LED current: 1mA Front: flat Power: 50mW LED colour: red Type of diode: LED |
на замовлення 185 шт: термін постачання 21-30 дні (днів) |
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RB717FT106 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC70,SOT323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: common anode; double Max. forward voltage: 0.37V Case: SC70; SOT323 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 0.2A |
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2SD2226KT146W | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Case: SC59; SOT346 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 1200...2700 Collector current: 0.15A Type of transistor: NPN |
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QS5K2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25 Mounting: SMD Case: TSOT25 Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 2A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: reel; tape Semiconductor structure: common source On-state resistance: 154mΩ Pulsed drain current: 8A Power dissipation: 1.25W Gate charge: 2.8nC |
товар відсутній |
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RN141CMT2R | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF Type of diode: switching Max. off-state voltage: 50V Load current: 0.1A Case: SOD923 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.8pF |
на замовлення 7820 шт: термін постачання 21-30 дні (днів) |
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| UMN1NTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW Type of diode: switching Power dissipation: 0.15W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT353 Max. load current: 80mA Semiconductor structure: common cathode; quadruple Reverse recovery time: 4ns Max. forward impulse current: 0.25A Max. off-state voltage: 80V Load current: 25mA |
товар відсутній |
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| UMP1NFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW Type of diode: switching Power dissipation: 0.15W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT353 Max. load current: 80mA Semiconductor structure: common anode; quadruple Reverse recovery time: 4ns Max. forward impulse current: 0.25A Max. off-state voltage: 80V Load current: 25mA |
товар відсутній |
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UMP1NTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW Type of diode: switching Power dissipation: 0.15W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT353 Max. load current: 80mA Semiconductor structure: common anode; quadruple Reverse recovery time: 4ns Max. forward impulse current: 0.25A Max. off-state voltage: 80V Load current: 25mA |
на замовлення 11770 шт: термін постачання 21-30 дні (днів) |
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| UMZ6.8ENTR | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC88A,SOT353; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SC88A; SOT353 Semiconductor structure: common anode; quadruple Leakage current: 0.5µA |
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| R8002CND3FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 69W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2A Pulsed drain current: 8A Power dissipation: 69W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 4.3Ω Mounting: SMD Gate charge: 12.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| RQ3E075ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -30A; 15W; HSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -30A Power dissipation: 15W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| DTA014EEBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Current gain: 35 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
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| DTA014EUBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 10kΩ Frequency: 250MHz Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT323F Collector-emitter voltage: 50V Current gain: 35 Collector current: 0.1A Type of transistor: PNP |
товар відсутній |
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| DAN235ETL | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA Mounting: SMD Case: SC75A Capacitance: 1.2pF Max. off-state voltage: 35V Max. forward voltage: 1V Semiconductor structure: common cathode; double Leakage current: 10nA Power dissipation: 0.15W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: band-switching; RF |
товар відсутній |
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| DTC123YETL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
| RGS80TSX2HRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Gate charge: 104nC
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Gate charge: 104nC
Mounting: THT
товар відсутній
| RB481KTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC82,SOT343; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Max. forward voltage: 0.5V
Case: SC82; SOT343
Kind of package: reel; tape
Leakage current: 30µA
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC82,SOT343; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Max. forward voltage: 0.5V
Case: SC82; SOT343
Kind of package: reel; tape
Leakage current: 30µA
Max. forward impulse current: 1A
товар відсутній
| BCX17HZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товар відсутній
| BCX17T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товар відсутній
| KDZVTR4.3B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.3V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.3V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
товар відсутній
| EMG2T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ
Mounting: SMD
Case: SOT553
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.15W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ
Mounting: SMD
Case: SOT553
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.15W
товар відсутній
| FMG2AT148 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| UMG2NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Mounting: SMD
Case: SC88A; SOT353
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.15W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Mounting: SMD
Case: SC88A; SOT353
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.15W
товар відсутній
| UMG5NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Mounting: SMD
Case: SC88A; SOT353
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.15W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Mounting: SMD
Case: SC88A; SOT353
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.15W
товар відсутній
| SML-D12D8WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: orange
Luminosity: 40...100mcd
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 602...608nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Operating voltage: 2.2V
Category: SMD colour LEDs
Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: orange
Luminosity: 40...100mcd
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 602...608nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Operating voltage: 2.2V
на замовлення 2998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.66 грн |
| 45+ | 8.82 грн |
| 100+ | 5.88 грн |
| 260+ | 3.3 грн |
| 705+ | 3.12 грн |
| 2SB1709TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96
Case: SC96
Mounting: SMD
Frequency: 400MHz
Kind of package: reel; tape
Power dissipation: 0.5W
Collector-emitter voltage: 12V
Collector current: 1.5A
Current gain: 270...680
Type of transistor: PNP
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96
Case: SC96
Mounting: SMD
Frequency: 400MHz
Kind of package: reel; tape
Power dissipation: 0.5W
Collector-emitter voltage: 12V
Collector current: 1.5A
Current gain: 270...680
Type of transistor: PNP
Polarisation: bipolar
товар відсутній
| R6004END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.36Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.36Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| R6004JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSR015P06FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
товар відсутній
| RSR015P06HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
товар відсутній
| CDZVT2R9.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 9.1V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 9.1V
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 9.1V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 9.1V
Leakage current: 0.5µA
товар відсутній
| YFZVFHTR9.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 9.1V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 9.1V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| UDZVTE-179.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| UDZVFHTE-179.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| R6006KND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 70W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 70W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
товар відсутній
| SCT3160KW7TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
On-state resistance: 208mΩ
Power dissipation: 100W
Drain-source voltage: 1.2kV
Drain current: 17A
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 42A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
On-state resistance: 208mΩ
Power dissipation: 100W
Drain-source voltage: 1.2kV
Drain current: 17A
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 42A
товар відсутній
| DAN217UMFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323F
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323F
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
товар відсутній
| DAN217UMTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323F
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323F
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
товар відсутній
| DAN217UT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC70,SOT323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SC70; SOT323
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC70,SOT323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SC70; SOT323
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
товар відсутній
| SH8KA2GZETB |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| 2SB1707TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 4A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC96
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 4A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC96
Frequency: 250MHz
товар відсутній
| RGT16NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO263
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO263
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| RGT16NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: LPDS
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: LPDS
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| RQ3G150GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
товар відсутній
| 2SA2030T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723
Kind of package: reel; tape
Frequency: 260MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Mounting: SMD
Case: SOT723
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723
Kind of package: reel; tape
Frequency: 260MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Mounting: SMD
Case: SOT723
товар відсутній
| 2SD2114KT146W |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Pulsed collector current: 1A
Current gain: 2700
Mounting: SMD
Kind of package: reel; tape
Frequency: 350MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Pulsed collector current: 1A
Current gain: 2700
Mounting: SMD
Kind of package: reel; tape
Frequency: 350MHz
товар відсутній
| 2SD2142KT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 10k
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 10k
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
товар відсутній
| 2SD2153T100V |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 820...1800
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 820...1800
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
товар відсутній
| RBR15BM30AFHTL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 7.5Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. forward voltage: 0.51V
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 7.5Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. forward voltage: 0.51V
Leakage current: 0.2mA
товар відсутній
| RBQ30NS45BTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 30A; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; SC83; TO263S
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. forward voltage: 0.59V
Leakage current: 0.35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 30A; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; SC83; TO263S
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. forward voltage: 0.59V
Leakage current: 0.35mA
товар відсутній
| RBQ30TB45BNZC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30A; ITO220AC,TO220FN; tube
Case: ITO220AC; TO220FN
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Load current: 30A
Max. forward voltage: 0.59V
Leakage current: 0.35mA
Max. forward impulse current: 100A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30A; ITO220AC,TO220FN; tube
Case: ITO220AC; TO220FN
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Load current: 30A
Max. forward voltage: 0.59V
Leakage current: 0.35mA
Max. forward impulse current: 100A
товар відсутній
| IMD2AT108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| IMD9AT108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Frequency: 250MHz
Mounting: SMD
Base-emitter resistor: 47kΩ
Case: SC74; SOT457
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Frequency: 250MHz
Mounting: SMD
Base-emitter resistor: 47kΩ
Case: SC74; SOT457
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
товар відсутній
| IMH5AT108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Base-emitter resistor: 22kΩ
Case: SC74; SOT457
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Base-emitter resistor: 22kΩ
Case: SC74; SOT457
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 22kΩ
товар відсутній
| IMZ1AT108 | |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Frequency: 180MHz
Mounting: SMD
Case: SC74; SOT457
Collector-emitter voltage: 50V
Collector current: 0.15A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Frequency: 180MHz
Mounting: SMD
Case: SC74; SOT457
Collector-emitter voltage: 50V
Collector current: 0.15A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
на замовлення 2934 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.39 грн |
| 9+ | 44.82 грн |
| 24+ | 36.81 грн |
| 65+ | 34.83 грн |
| 500+ | 33.51 грн |
| IMD10AT108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Frequency: 200MHz; 250MHz
Mounting: SMD
Base-emitter resistor: 10kΩ
Case: SC74; SOT457
Collector-emitter voltage: 50V
Current gain: 68...600
Collector current: 0.5/0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 0.1/10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Frequency: 200MHz; 250MHz
Mounting: SMD
Base-emitter resistor: 10kΩ
Case: SC74; SOT457
Collector-emitter voltage: 50V
Current gain: 68...600
Collector current: 0.5/0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 0.1/10kΩ
товар відсутній
| IMD16AT108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Frequency: 250MHz
Mounting: SMD
Base-emitter resistor: 22kΩ
Case: SC74; SOT457
Collector-emitter voltage: 50V
Current gain: 82...600
Collector current: 0.5/0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 2.2/100kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Frequency: 250MHz
Mounting: SMD
Base-emitter resistor: 22kΩ
Case: SC74; SOT457
Collector-emitter voltage: 50V
Current gain: 82...600
Collector current: 0.5/0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 2.2/100kΩ
на замовлення 1220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.19 грн |
| 50+ | 7.79 грн |
| 100+ | 6.76 грн |
| 135+ | 6.59 грн |
| 360+ | 6.23 грн |
| 500+ | 6.1 грн |
| RB706UM-40TL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOT323F; reel,tape
Mounting: SMD
Max. forward impulse current: 0.2A
Leakage current: 1µA
Case: SOT323F
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Type of diode: Schottky rectifying
Max. forward voltage: 0.37V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOT323F; reel,tape
Mounting: SMD
Max. forward impulse current: 0.2A
Leakage current: 1µA
Case: SOT323F
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Type of diode: Schottky rectifying
Max. forward voltage: 0.37V
на замовлення 2989 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.24 грн |
| 80+ | 4.97 грн |
| 230+ | 3.74 грн |
| 250+ | 3.73 грн |
| 620+ | 3.53 грн |
| 2SCR586D3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.93 грн |
| 11+ | 36.45 грн |
| 25+ | 32.77 грн |
| 34+ | 25.72 грн |
| 93+ | 24.32 грн |
| SML-P11UTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm
Mounting: SMD
Case: 0402
Operating voltage: 1.8V
Dimensions: 1x0.6x0.2mm
Wavelength: 616...626nm
LED lens: transparent
Luminosity: 1...2.5mcd
LED current: 1mA
Front: flat
Power: 50mW
LED colour: red
Type of diode: LED
Category: SMD colour LEDs
Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm
Mounting: SMD
Case: 0402
Operating voltage: 1.8V
Dimensions: 1x0.6x0.2mm
Wavelength: 616...626nm
LED lens: transparent
Luminosity: 1...2.5mcd
LED current: 1mA
Front: flat
Power: 50mW
LED colour: red
Type of diode: LED
товар відсутній
| SML-P11UTT86R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm
Mounting: SMD
Case: 0402
Operating voltage: 1.8V
Dimensions: 1x0.6x0.2mm
Wavelength: 616...626nm
LED lens: transparent
Luminosity: 1...2.5mcd
LED current: 1mA
Front: flat
Power: 50mW
LED colour: red
Type of diode: LED
Category: SMD colour LEDs
Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm
Mounting: SMD
Case: 0402
Operating voltage: 1.8V
Dimensions: 1x0.6x0.2mm
Wavelength: 616...626nm
LED lens: transparent
Luminosity: 1...2.5mcd
LED current: 1mA
Front: flat
Power: 50mW
LED colour: red
Type of diode: LED
на замовлення 185 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.03 грн |
| 60+ | 6.54 грн |
| 100+ | 5.58 грн |
| 185+ | 4.63 грн |
| RB717FT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC70,SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: common anode; double
Max. forward voltage: 0.37V
Case: SC70; SOT323
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC70,SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: common anode; double
Max. forward voltage: 0.37V
Case: SC70; SOT323
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
товар відсутній
| 2SD2226KT146W |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 1200...2700
Collector current: 0.15A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 1200...2700
Collector current: 0.15A
Type of transistor: NPN
товар відсутній
| QS5K2TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Case: TSOT25
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common source
On-state resistance: 154mΩ
Pulsed drain current: 8A
Power dissipation: 1.25W
Gate charge: 2.8nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Case: TSOT25
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common source
On-state resistance: 154mΩ
Pulsed drain current: 8A
Power dissipation: 1.25W
Gate charge: 2.8nC
товар відсутній
| RN141CMT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD923
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.8pF
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD923
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.8pF
на замовлення 7820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.17 грн |
| 100+ | 5.26 грн |
| 200+ | 4.3 грн |
| 550+ | 4.06 грн |
| UMN1NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common cathode; quadruple
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Max. off-state voltage: 80V
Load current: 25mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common cathode; quadruple
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Max. off-state voltage: 80V
Load current: 25mA
товар відсутній
| UMP1NFHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common anode; quadruple
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Max. off-state voltage: 80V
Load current: 25mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common anode; quadruple
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Max. off-state voltage: 80V
Load current: 25mA
товар відсутній
| UMP1NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common anode; quadruple
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Max. off-state voltage: 80V
Load current: 25mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common anode; quadruple
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Max. off-state voltage: 80V
Load current: 25mA
на замовлення 11770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.58 грн |
| 190+ | 4.5 грн |
| 530+ | 4.26 грн |
| 3000+ | 4.11 грн |
| UMZ6.8ENTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC88A,SOT353; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC88A; SOT353
Semiconductor structure: common anode; quadruple
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC88A,SOT353; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC88A; SOT353
Semiconductor structure: common anode; quadruple
Leakage current: 0.5µA
товар відсутній
| R8002CND3FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 69W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 4.3Ω
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 69W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 4.3Ω
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RQ3E075ATTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -30A; 15W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -30A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -30A; 15W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -30A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DTA014EEBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 35
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 35
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| DTA014EUBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 10kΩ
Frequency: 250MHz
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT323F
Collector-emitter voltage: 50V
Current gain: 35
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 10kΩ
Frequency: 250MHz
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT323F
Collector-emitter voltage: 50V
Current gain: 35
Collector current: 0.1A
Type of transistor: PNP
товар відсутній
| DAN235ETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA
Mounting: SMD
Case: SC75A
Capacitance: 1.2pF
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA
Mounting: SMD
Case: SC75A
Capacitance: 1.2pF
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
товар відсутній
| DTC123YETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
товар відсутній