Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99378) > Сторінка 1645 з 1657
| Фото | Назва | Виробник | Інформація |
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| 2SC5662T2LP | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 11V; 0.05A; 150mW; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 11V Collector current: 50mA Power dissipation: 0.15W Case: SOT723 Current gain: 180 Mounting: SMD Kind of package: reel; tape Frequency: 3.2GHz |
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| 2SC5663T2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 0.5A; 150mW; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT723 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
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| 2SC5866TLQ | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 2A; 500mW; SC96 Mounting: SMD Case: SC96 Kind of package: reel; tape Current gain: 120...270 Collector current: 2A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Frequency: 200MHz Collector-emitter voltage: 60V |
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2SC5876T106Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 0.5A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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RF081L2STFTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SMA; Ufmax: 0.98V; Ifsm: 25A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.98V Max. forward impulse current: 25A Kind of package: reel; tape |
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| RF081LAM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.98V Max. forward impulse current: 25A Kind of package: reel; tape |
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| RF081LAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.98V Max. forward impulse current: 25A Kind of package: reel; tape |
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RF081MM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.8A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.98V Max. forward impulse current: 20A Kind of package: reel; tape |
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RF081MM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.8A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.98V Max. forward impulse current: 20A Kind of package: reel; tape |
на замовлення 258 шт: термін постачання 21-30 дні (днів) |
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SML-210PTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0805; green; 1.4÷4mcd; 2x1.25x0.8mm; 2.2÷2.8V; 20mA; 70mW Operating voltage: 2.2...2.8V LED colour: green Type of diode: LED Wavelength: 555nm LED lens: transparent Luminosity: 1.4...4mcd LED current: 20mA Dimensions: 2x1.25x0.8mm Front: flat Mounting: SMD Case: 0805 Power: 70mW |
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| R6547KNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 141A; 480W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 141A Power dissipation: 480W Case: TO247 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
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KDZVTR3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 40µA Case: SOD123F Zener voltage: 3.9V Type of diode: Zener Tolerance: ±2% Power dissipation: 1W |
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KDZVTFTR3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 40µA Case: SOD123F Zener voltage: 3.9V Type of diode: Zener Power dissipation: 1W |
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| RB168LAM150TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.84V Case: SOD128 Kind of package: reel; tape Leakage current: 2.5µA Max. forward impulse current: 50A |
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RB168MM150TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.84V Case: SOD123F Kind of package: reel; tape Leakage current: 4µA Max. forward impulse current: 35A |
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RB168MM150TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.84V Case: SOD123F Kind of package: reel; tape Leakage current: 4µA Max. forward impulse current: 35A |
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| RB168VAM150TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.89V Case: SOD323HE Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 5A |
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| RB168VYM150FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.89V Case: SOD323HE Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 5A |
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| CDZVT2R4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 4.7V; SMD; reel,tape; SOD923; single diode; 2uA Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 4.7V Leakage current: 2µA |
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KDZVTFTR4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 4.7V Kind of package: reel; tape Case: SOD123F Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA |
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| YFZVFHTR4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 4.7V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: reel; tape Case: SOD323HE Mounting: SMD Semiconductor structure: single diode Leakage current: 5µA |
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| RS1E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 60A Power dissipation: 22W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
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| RB051LAM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: SOD128 Kind of package: reel; tape Leakage current: 0.15mA Max. forward impulse current: 80A |
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RB520CM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: SOD923 Kind of package: reel; tape Leakage current: 0.5µA Max. forward impulse current: 0.5A |
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2SAR533P5T100 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 500mW/2W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 500mW/2W Case: SC62; SOT89 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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| 2SAR543RTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 500mW; SC96 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.5W Case: SC96 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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| UM6K31NFHATCN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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UM6K31NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 2705 шт: термін постачання 21-30 дні (днів) |
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| UM6K33NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| UM6K34NTCN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| EMH11T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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IMH11AT110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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UMH11NTN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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DAN217T146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Features of semiconductor devices: fast switching Capacitance: 3.5pF Case: SC59; SOT346 Max. forward voltage: 1.2V Max. forward impulse current: 4A Leakage current: 0.1µA Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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| DAN217WMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series Max. off-state voltage: 80V Reverse recovery time: 4ns Max. forward impulse current: 4A Max. load current: 0.3A Max. forward voltage: 1.2V Type of diode: switching Load current: 0.1A |
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2SC4713KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 6V Collector current: 50mA Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 800MHz |
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2SC4713KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 6V Collector current: 50mA Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 800MHz |
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| RCX330N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 250V Drain current: 33A On-state resistance: 0.23Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A |
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| RD3S075CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 52W Case: TO252 Gate-source voltage: ±20V On-state resistance: 347mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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RB731XNTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: triple independent Max. forward voltage: 0.37V Case: SC88; SOT363 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 0.2A |
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BC847BT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23 Mounting: SMD Collector current: 0.1A Type of transistor: NPN Polarisation: bipolar Kind of package: reel; tape Power dissipation: 0.2W Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 45V Current gain: 200...450 |
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DTA123YCAT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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DTA123YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Polarisation: bipolar Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 33 |
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KDZVTFTR2.4B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA Mounting: SMD Case: SOD123F Semiconductor structure: single diode Zener voltage: 2.4V Leakage current: 0.2mA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener |
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SLR-332MG3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V Type of diode: LED Mounting: THT LED lens: transparent LED colour: yellow green Operating voltage: 2.1V LED current: 10mA Front: convex Terminal pitch: 2.54mm Wavelength: 563nm Viewing angle: 85° Number of terminals: 2 Luminosity: 5.6...16mcd LED diameter: 3.2mm |
на замовлення 2700 шт: термін постачання 21-30 дні (днів) |
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| SLR-342MG3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V LED colour: yellow green LED diameter: 3.1mm Type of diode: LED Wavelength: 572nm LED lens: diffused; yellow-green Luminosity: 5.6...16mcd LED current: 25mA Viewing angle: 40° Number of terminals: 2 Operating voltage: 2.1V Terminal pitch: 2.5mm Front: convex Mounting: THT |
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SLR-342VR3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2 Type of diode: LED Mounting: THT LED diameter: 3mm LED colour: red Terminal pitch: 2.54mm Wavelength: 630nm LED lens: diffused; red Luminosity: 5.6...16mcd LED current: 10mA Viewing angle: 40° Number of terminals: 2 Front: convex Operating voltage: 2V |
на замовлення 609 шт: термін постачання 21-30 дні (днів) |
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RB500VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape Mounting: SMD Case: SOD323F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.45V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 1A Leakage current: 1µA |
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| R6011KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP Power dissipation: 53W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 33A Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 11A On-state resistance: 720mΩ Type of transistor: N-MOSFET |
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| RQ3E180AJTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 72A Power dissipation: 30W Case: HSMT8 Gate-source voltage: ±12V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
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DTD114EKT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 2395 шт: термін постачання 21-30 дні (днів) |
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| RGS50TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 53ns Turn-off time: 345ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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| RGS50TSX2HRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 53ns Turn-off time: 345ns |
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| RGT50NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Mounting: SMD Type of transistor: IGBT Power dissipation: 97W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: TO263 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns |
товар відсутній |
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| RGT50NS65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Mounting: THT Type of transistor: IGBT Power dissipation: 97W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: TO262 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns |
товар відсутній |
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| RGT50NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Mounting: SMD Type of transistor: IGBT Power dissipation: 97W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: LPDS Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns |
товар відсутній |
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| RGTH50TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 100A Turn-on time: 65ns Turn-off time: 172ns Type of transistor: IGBT Power dissipation: 87W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 25A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC |
товар відсутній |
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RB530CM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 0.5A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 0.3µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.46V |
товар відсутній |
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RB530CM-60T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.2A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.6V |
товар відсутній |
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BCX19HZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 40...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товар відсутній |
| 2SC5662T2LP |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 0.05A; 150mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.15W
Case: SOT723
Current gain: 180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 0.05A; 150mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.15W
Case: SOT723
Current gain: 180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
товар відсутній
| 2SC5663T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.5A; 150mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT723
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.5A; 150mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT723
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
товар відсутній
| 2SC5866TLQ |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 500mW; SC96
Mounting: SMD
Case: SC96
Kind of package: reel; tape
Current gain: 120...270
Collector current: 2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Frequency: 200MHz
Collector-emitter voltage: 60V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 500mW; SC96
Mounting: SMD
Case: SC96
Kind of package: reel; tape
Current gain: 120...270
Collector current: 2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Frequency: 200MHz
Collector-emitter voltage: 60V
товар відсутній
| 2SC5876T106Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
| RF081L2STFTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SMA; Ufmax: 0.98V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SMA; Ufmax: 0.98V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
товар відсутній
| RF081LAM2STFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
товар відсутній
| RF081LAM2STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
товар відсутній
| RF081MM2STFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Kind of package: reel; tape
товар відсутній
| RF081MM2STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Kind of package: reel; tape
на замовлення 258 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.74 грн |
| 40+ | 9.33 грн |
| 100+ | 8.23 грн |
| 115+ | 7.37 грн |
| SML-210PTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0805; green; 1.4÷4mcd; 2x1.25x0.8mm; 2.2÷2.8V; 20mA; 70mW
Operating voltage: 2.2...2.8V
LED colour: green
Type of diode: LED
Wavelength: 555nm
LED lens: transparent
Luminosity: 1.4...4mcd
LED current: 20mA
Dimensions: 2x1.25x0.8mm
Front: flat
Mounting: SMD
Case: 0805
Power: 70mW
Category: SMD colour LEDs
Description: LED; SMD; 0805; green; 1.4÷4mcd; 2x1.25x0.8mm; 2.2÷2.8V; 20mA; 70mW
Operating voltage: 2.2...2.8V
LED colour: green
Type of diode: LED
Wavelength: 555nm
LED lens: transparent
Luminosity: 1.4...4mcd
LED current: 20mA
Dimensions: 2x1.25x0.8mm
Front: flat
Mounting: SMD
Case: 0805
Power: 70mW
товар відсутній
| R6547KNZ4C13 |
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 141A; 480W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 480W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 141A; 480W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 480W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| KDZVTR3.9B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SOD123F
Zener voltage: 3.9V
Type of diode: Zener
Tolerance: ±2%
Power dissipation: 1W
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SOD123F
Zener voltage: 3.9V
Type of diode: Zener
Tolerance: ±2%
Power dissipation: 1W
товар відсутній
| KDZVTFTR3.9B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SOD123F
Zener voltage: 3.9V
Type of diode: Zener
Power dissipation: 1W
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SOD123F
Zener voltage: 3.9V
Type of diode: Zener
Power dissipation: 1W
товар відсутній
| RB168LAM150TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Case: SOD128
Kind of package: reel; tape
Leakage current: 2.5µA
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Case: SOD128
Kind of package: reel; tape
Leakage current: 2.5µA
Max. forward impulse current: 50A
товар відсутній
| RB168MM150TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 4µA
Max. forward impulse current: 35A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 4µA
Max. forward impulse current: 35A
товар відсутній
| RB168MM150TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 4µA
Max. forward impulse current: 35A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 4µA
Max. forward impulse current: 35A
товар відсутній
| RB168VAM150TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 5A
товар відсутній
| RB168VYM150FHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 5A
товар відсутній
| CDZVT2R4.7B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 4.7V; SMD; reel,tape; SOD923; single diode; 2uA
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 4.7V
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 4.7V; SMD; reel,tape; SOD923; single diode; 2uA
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 4.7V
Leakage current: 2µA
товар відсутній
| KDZVTFTR4.7B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
товар відсутній
| YFZVFHTR4.7B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 4.7V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 4.7V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| RS1E150GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RB051LAM-40TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD128
Kind of package: reel; tape
Leakage current: 0.15mA
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD128
Kind of package: reel; tape
Leakage current: 0.15mA
Max. forward impulse current: 80A
товар відсутній
| RB520CM-30T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD923
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD923
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
товар відсутній
| 2SAR533P5T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 500mW/2W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 500mW/2W
Case: SC62; SOT89
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 500mW/2W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 500mW/2W
Case: SC62; SOT89
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
| 2SAR543RTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 500mW; SC96
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.5W
Case: SC96
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 500mW; SC96
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.5W
Case: SC96
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
| UM6K31NFHATCN |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| UM6K31NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 2705 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 13.14 грн |
| 50+ | 7.49 грн |
| 100+ | 5.95 грн |
| 165+ | 5.22 грн |
| 445+ | 4.92 грн |
| UM6K33NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| UM6K34NTCN |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| EMH11T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| IMH11AT110 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| UMH11NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| DAN217T146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Capacitance: 3.5pF
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Leakage current: 0.1µA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Capacitance: 3.5pF
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Leakage current: 0.1µA
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 6.25 грн |
| 115+ | 3.31 грн |
| DAN217WMTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
товар відсутній
| 2SC4713KT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 6V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 6V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
товар відсутній
| 2SC4713KT146S |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 6V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 6V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
товар відсутній
| RCX330N25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
товар відсутній
| RD3S075CNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 347mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 347mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RB731XNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: triple independent
Max. forward voltage: 0.37V
Case: SC88; SOT363
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: triple independent
Max. forward voltage: 0.37V
Case: SC88; SOT363
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
товар відсутній
| BC847BT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 0.2W
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 0.2W
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 45V
Current gain: 200...450
товар відсутній
| DTA123YCAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.11 грн |
| 500+ | 1.87 грн |
| 525+ | 1.62 грн |
| DTA123YKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
товар відсутній
| KDZVTFTR2.4B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Zener voltage: 2.4V
Leakage current: 0.2mA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Zener voltage: 2.4V
Leakage current: 0.2mA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
товар відсутній
| SLR-332MG3F |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V
Type of diode: LED
Mounting: THT
LED lens: transparent
LED colour: yellow green
Operating voltage: 2.1V
LED current: 10mA
Front: convex
Terminal pitch: 2.54mm
Wavelength: 563nm
Viewing angle: 85°
Number of terminals: 2
Luminosity: 5.6...16mcd
LED diameter: 3.2mm
Category: THT LEDs Round
Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V
Type of diode: LED
Mounting: THT
LED lens: transparent
LED colour: yellow green
Operating voltage: 2.1V
LED current: 10mA
Front: convex
Terminal pitch: 2.54mm
Wavelength: 563nm
Viewing angle: 85°
Number of terminals: 2
Luminosity: 5.6...16mcd
LED diameter: 3.2mm
на замовлення 2700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.99 грн |
| 16+ | 24.25 грн |
| 25+ | 17.12 грн |
| 70+ | 12.13 грн |
| 192+ | 11.47 грн |
| SLR-342MG3F |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V
LED colour: yellow green
LED diameter: 3.1mm
Type of diode: LED
Wavelength: 572nm
LED lens: diffused; yellow-green
Luminosity: 5.6...16mcd
LED current: 25mA
Viewing angle: 40°
Number of terminals: 2
Operating voltage: 2.1V
Terminal pitch: 2.5mm
Front: convex
Mounting: THT
Category: THT LEDs Round
Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V
LED colour: yellow green
LED diameter: 3.1mm
Type of diode: LED
Wavelength: 572nm
LED lens: diffused; yellow-green
Luminosity: 5.6...16mcd
LED current: 25mA
Viewing angle: 40°
Number of terminals: 2
Operating voltage: 2.1V
Terminal pitch: 2.5mm
Front: convex
Mounting: THT
товар відсутній
| SLR-342VR3F |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2
Type of diode: LED
Mounting: THT
LED diameter: 3mm
LED colour: red
Terminal pitch: 2.54mm
Wavelength: 630nm
LED lens: diffused; red
Luminosity: 5.6...16mcd
LED current: 10mA
Viewing angle: 40°
Number of terminals: 2
Front: convex
Operating voltage: 2V
Category: THT LEDs Round
Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2
Type of diode: LED
Mounting: THT
LED diameter: 3mm
LED colour: red
Terminal pitch: 2.54mm
Wavelength: 630nm
LED lens: diffused; red
Luminosity: 5.6...16mcd
LED current: 10mA
Viewing angle: 40°
Number of terminals: 2
Front: convex
Operating voltage: 2V
на замовлення 609 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.23 грн |
| 18+ | 21.16 грн |
| 25+ | 14.84 грн |
| 78+ | 11.17 грн |
| 213+ | 10.58 грн |
| RB500VM-40TE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Mounting: SMD
Case: SOD323F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Mounting: SMD
Case: SOD323F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
товар відсутній
| R6011KNXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 33A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 720mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 33A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 720mΩ
Type of transistor: N-MOSFET
товар відсутній
| RQ3E180AJTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DTD114EKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2395 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.03 грн |
| 55+ | 7.05 грн |
| 100+ | 6.32 грн |
| 175+ | 4.92 грн |
| 485+ | 4.63 грн |
| RGS50TSX2DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| RGS50TSX2HRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
товар відсутній
| RGT50NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Mounting: SMD
Type of transistor: IGBT
Power dissipation: 97W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Case: TO263
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 65ns
Turn-off time: 210ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Mounting: SMD
Type of transistor: IGBT
Power dissipation: 97W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Case: TO263
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 65ns
Turn-off time: 210ns
товар відсутній
| RGT50NS65DGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Mounting: THT
Type of transistor: IGBT
Power dissipation: 97W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Case: TO262
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 65ns
Turn-off time: 210ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Mounting: THT
Type of transistor: IGBT
Power dissipation: 97W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Case: TO262
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 65ns
Turn-off time: 210ns
товар відсутній
| RGT50NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Mounting: SMD
Type of transistor: IGBT
Power dissipation: 97W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Case: LPDS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 65ns
Turn-off time: 210ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Mounting: SMD
Type of transistor: IGBT
Power dissipation: 97W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Case: LPDS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 65ns
Turn-off time: 210ns
товар відсутній
| RGTH50TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
товар відсутній
| RB530CM-30T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
товар відсутній
| RB530CM-60T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
товар відсутній
| BCX19HZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 40...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 40...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товар відсутній