RGT8BM65DTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: IGBT TRENCH FIELD 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
на замовлення 2140 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 155.1 грн |
| 10+ | 124.02 грн |
| 100+ | 98.7 грн |
| 500+ | 78.37 грн |
| 1000+ | 66.5 грн |
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Технічний опис RGT8BM65DTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-252, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/69ns, Test Condition: 400V, 4A, 50Ohm, 15V, Gate Charge: 13.5 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 62 W.
Інші пропозиції RGT8BM65DTL за ціною від 64.03 грн до 168.92 грн
| Фото | Назва | Виробник | Інформація |
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RGT8BM65DTL | Виробник : ROHM Semiconductor |
IGBTs 650V 4A IGBT Stop Trench |
на замовлення 2157 шт: термін постачання 21-30 дні (днів) |
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| RGT8BM65DTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 31W; TO252 Case: TO252 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 12A Turn-on time: 54ns Turn-off time: 158ns Type of transistor: IGBT Power dissipation: 31W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 13.5nC Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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RGT8BM65DTL | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 8A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 62 W |
товар відсутній |
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| RGT8BM65DTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 31W; TO252 Case: TO252 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 12A Turn-on time: 54ns Turn-off time: 158ns Type of transistor: IGBT Power dissipation: 31W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 13.5nC Mounting: SMD |
товар відсутній |