RGCL80TS60DGC11 ROHM Semiconductor
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
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Технічний опис RGCL80TS60DGC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 600V 65A TO247N, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 53ns/227ns, Switching Energy: 1.11mJ (on), 1.68mJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 98 nC, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 148 W.
Інші пропозиції RGCL80TS60DGC11
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| RGCL80TS60DGC11 | Виробник : ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 74W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 74W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 98nC Kind of package: tube Turn-on time: 114ns Turn-off time: 565ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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RGCL80TS60DGC11 | Виробник : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 600V 65A TO247N Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 148 W |
товар відсутній |
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| RGCL80TS60DGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 74W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 98nC Kind of package: tube Turn-on time: 114ns Turn-off time: 565ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |