Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99813) > Сторінка 1635 з 1664
| Фото | Назва | Виробник | Інформація |
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| EMG8T2R | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT553 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
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| EMH25FHAT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
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| EMH25T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 150mW Case: SOT563 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
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| EMH75T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 150mW Case: SOT563 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
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DTC114WUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 24 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 4.7kΩ |
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UMG8NTR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Semiconductor structure: common emitter Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 705 шт: термін постачання 21-30 дні (днів) |
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| EMD6FHAT2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
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| EMD6T2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Power dissipation: 150mW Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Frequency: 250MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Current gain: 100...600 Type of transistor: NPN / PNP Kind of package: reel; tape |
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IMD6AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Frequency: 250MHz Mounting: SMD Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Case: SC74; SOT457 Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 0.1A Type of transistor: NPN / PNP |
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UMD6NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC88; SOT363 Power dissipation: 150mW Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Frequency: 250MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Current gain: 100...600 Type of transistor: NPN / PNP Kind of package: reel; tape |
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| EMD22FHAT2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Case: SOT563 Mounting: SMD Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN / PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz |
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| EMD22T2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN / PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz |
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| EMD72T2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Power dissipation: 150mW Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Current gain: 80 Type of transistor: NPN / PNP Kind of package: reel; tape |
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UMD22NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
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| EMD5T2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Power dissipation: 150mW Kind of transistor: BRT; complementary pair Base resistor: 47/4.7kΩ Base-emitter resistor: 47/10kΩ Frequency: 250MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Current gain: 30...68 Type of transistor: NPN / PNP Kind of package: reel; tape |
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UMD5NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC88; SOT363 Power dissipation: 150mW Kind of transistor: BRT; complementary pair Base resistor: 47/4.7kΩ Base-emitter resistor: 47/10kΩ Frequency: 250MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Current gain: 30...68 Type of transistor: NPN / PNP Kind of package: reel; tape |
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RB731UFHT108 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC74,SOT457; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: triple independent Max. forward voltage: 0.37V Case: SC74; SOT457 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 0.2A |
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UDZVTE-1712B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 2650 шт: термін постачання 21-30 дні (днів) |
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| UDZLVTE-17120 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 120V; SMD; reel,tape; SOD323F; single diode Kind of package: reel; tape Zener voltage: 120V Leakage current: 200nA Case: SOD323F Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Power dissipation: 200mW |
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| UDZVFHTE-1712B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
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RFN1L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.45V Max. forward impulse current: 15A Kind of package: reel; tape |
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RFN2L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 35ns Semiconductor structure: single diode Max. forward voltage: 1.55V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A |
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1SS380VMFHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: single diode Case: SC90A; SOD323F Max. forward voltage: 1.2V Max. load current: 225mA Max. forward impulse current: 0.4A Kind of package: reel; tape |
на замовлення 2096 шт: термін постачання 21-30 дні (днів) |
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1SS380VMTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: single diode Case: SC90A; SOD323F Max. forward voltage: 1.2V Max. load current: 225mA Max. forward impulse current: 0.4A Kind of package: reel; tape |
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BC848BWT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 450 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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RSS100N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSR030N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
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RSR030N06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2586 шт: термін постачання 21-30 дні (днів) |
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MSL0104RGBU1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 2709; RGB; 6.9x2.2x2.15mm; 2.1/3.3/3.2V; 20mA; Front: flat Type of diode: LED Mounting: SMD Case: 2709 LED colour: RGB Dimensions: 6.9x2.2x2.15mm LED current: 20mA Wavelength: 465...475nm; 520...535nm; 619...629nm LED version: angular; tricolour Luminosity of red colour: 450...700mcd Luminosity of blue colour: 220...400mcd Luminosity of green colour: 710...1200mcd Front: flat Operating voltage: 2.1/3.3/3.2V |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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| DAN222WMFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Max. off-state voltage: 80V Reverse recovery time: 4ns Max. forward impulse current: 4A Max. load current: 0.3A Max. forward voltage: 1.2V Type of diode: switching Load current: 0.1A |
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| DAN222WMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Max. off-state voltage: 80V Reverse recovery time: 4ns Max. forward impulse current: 4A Max. load current: 0.3A Max. forward voltage: 1.2V Type of diode: switching Load current: 0.1A |
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| DAP222WMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double Max. off-state voltage: 80V Reverse recovery time: 4ns Max. forward impulse current: 4A Max. load current: 0.3A Max. forward voltage: 1.2V Type of diode: switching Load current: 0.1A |
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SP8K80TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 500mA; Idm: 2A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.5A Pulsed drain current: 2A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±30V On-state resistance: 11.7Ω Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced |
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| RF4C050APTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -20A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020-8S Polarisation: unipolar Power dissipation: 2W Type of transistor: P-MOSFET On-state resistance: 26mΩ Drain current: -10A Gate charge: 55nC Drain-source voltage: -20V Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A |
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| RF4G060ATTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6A; Idm: -24A; 2W; DFN2020-8S Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -6A Pulsed drain current: -24A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 17.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| RF4L040ATTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 2W; DFN2020-8S Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Pulsed drain current: -16A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 89mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced |
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| RHP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
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| RHP030N03T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 10A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| RJP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
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| RQ3E160ADTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 64A; 2W; HSMT8 Case: HSMT8 Mounting: SMD On-state resistance: 7mΩ Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: 64A Drain-source voltage: 30V Drain current: 16A Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±20V |
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RS3E075ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.5A Pulsed drain current: -30A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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RSH065N06GZETB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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RSH065N06TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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RSH070N05GZETB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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RSH070N05TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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RSH070P05GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
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RSH070P05TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
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RSS060P05FRATB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -6A Pulsed drain current: -24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 53mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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| UT6K30TCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8 Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 223mΩ Gate-source voltage: ±20V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 2.1nC Polarisation: unipolar Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET |
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| UT6K3TCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; Idm: 12A; 2W; DFN2020D-8 Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 63mΩ Gate-source voltage: ±12V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 4nC Polarisation: unipolar Drain current: 5.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET |
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| RF4C100BCTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020-8S Polarisation: unipolar Power dissipation: 2W Type of transistor: P-MOSFET On-state resistance: 15.6mΩ Drain current: -10A Gate charge: 23.5nC Drain-source voltage: -20V Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -36A |
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| RF4E075ATTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.5A Pulsed drain current: -30A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 21.7mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
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RF4E080BNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 17.6mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2954 шт: термін постачання 21-30 дні (днів) |
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RF4E080GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 17.6mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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RF4E100AJTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±12V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2989 шт: термін постачання 21-30 дні (днів) |
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| RF4E110GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 44A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
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RS3E180ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -72A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -72A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced |
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RS3L110ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Pulsed drain current: -44A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14.3mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhanced |
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RRH050P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8 Power dissipation: 2W Case: SOP8 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Pulsed drain current: -20A Gate charge: 17nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 50mΩ |
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RRH140P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
| EMG8T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT553
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT553
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| EMH25FHAT2R |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| EMH25T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 150mW
Case: SOT563
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 150mW
Case: SOT563
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| EMH75T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 150mW
Case: SOT563
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 150mW
Case: SOT563
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| DTC114WUAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 24
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 24
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 4.7kΩ
товар відсутній
| UMG8NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 705 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 6.23 грн |
| 95+ | 3.95 грн |
| 250+ | 3.48 грн |
| 285+ | 3.02 грн |
| EMD6FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
товар відсутній
| EMD6T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 100...600
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 100...600
Type of transistor: NPN / PNP
Kind of package: reel; tape
товар відсутній
| IMD6AT108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Frequency: 250MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC74; SOT457
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Frequency: 250MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC74; SOT457
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN / PNP
товар відсутній
| UMD6NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC88; SOT363
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 100...600
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC88; SOT363
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 100...600
Type of transistor: NPN / PNP
Kind of package: reel; tape
товар відсутній
| EMD22FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SOT563
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SOT563
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
товар відсутній
| EMD22T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
товар відсутній
| EMD72T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 80
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 80
Type of transistor: NPN / PNP
Kind of package: reel; tape
товар відсутній
| UMD22NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| EMD5T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 47/4.7kΩ
Base-emitter resistor: 47/10kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 30...68
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 47/4.7kΩ
Base-emitter resistor: 47/10kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 30...68
Type of transistor: NPN / PNP
Kind of package: reel; tape
товар відсутній
| UMD5NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC88; SOT363
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 47/4.7kΩ
Base-emitter resistor: 47/10kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 30...68
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC88; SOT363
Power dissipation: 150mW
Kind of transistor: BRT; complementary pair
Base resistor: 47/4.7kΩ
Base-emitter resistor: 47/10kΩ
Frequency: 250MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Current gain: 30...68
Type of transistor: NPN / PNP
Kind of package: reel; tape
товар відсутній
| RB731UFHT108 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC74,SOT457; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: triple independent
Max. forward voltage: 0.37V
Case: SC74; SOT457
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC74,SOT457; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: triple independent
Max. forward voltage: 0.37V
Case: SC74; SOT457
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
товар відсутній
| UDZVTE-1712B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 2650 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.65 грн |
| 215+ | 1.71 грн |
| 500+ | 1.51 грн |
| 625+ | 1.35 грн |
| 1720+ | 1.27 грн |
| UDZLVTE-17120 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 120V; SMD; reel,tape; SOD323F; single diode
Kind of package: reel; tape
Zener voltage: 120V
Leakage current: 200nA
Case: SOD323F
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Power dissipation: 200mW
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 120V; SMD; reel,tape; SOD323F; single diode
Kind of package: reel; tape
Zener voltage: 120V
Leakage current: 200nA
Case: SOD323F
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Power dissipation: 200mW
товар відсутній
| UDZVFHTE-1712B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| RFN1L6SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
товар відсутній
| RFN2L6SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
товар відсутній
| 1SS380VMFHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1.2V
Max. load current: 225mA
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1.2V
Max. load current: 225mA
Max. forward impulse current: 0.4A
Kind of package: reel; tape
на замовлення 2096 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.19 грн |
| 37+ | 10.03 грн |
| 54+ | 6.79 грн |
| 100+ | 5.73 грн |
| 224+ | 3.81 грн |
| 615+ | 3.61 грн |
| 1SS380VMTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1.2V
Max. load current: 225mA
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1.2V
Max. load current: 225mA
Max. forward impulse current: 0.4A
Kind of package: reel; tape
товар відсутній
| BC848BWT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 450
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 450
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товар відсутній
| RSS100N03HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSR030N06FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSR030N06HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2586 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.12 грн |
| 14+ | 27.09 грн |
| 57+ | 15.01 грн |
| 157+ | 14.2 грн |
| MSL0104RGBU1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 2709; RGB; 6.9x2.2x2.15mm; 2.1/3.3/3.2V; 20mA; Front: flat
Type of diode: LED
Mounting: SMD
Case: 2709
LED colour: RGB
Dimensions: 6.9x2.2x2.15mm
LED current: 20mA
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: angular; tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
Front: flat
Operating voltage: 2.1/3.3/3.2V
Category: SMD colour LEDs
Description: LED; SMD; 2709; RGB; 6.9x2.2x2.15mm; 2.1/3.3/3.2V; 20mA; Front: flat
Type of diode: LED
Mounting: SMD
Case: 2709
LED colour: RGB
Dimensions: 6.9x2.2x2.15mm
LED current: 20mA
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: angular; tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
Front: flat
Operating voltage: 2.1/3.3/3.2V
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.56 грн |
| DAN222WMFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
товар відсутній
| DAN222WMTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
товар відсутній
| DAP222WMTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
товар відсутній
| SP8K80TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 500mA; Idm: 2A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±30V
On-state resistance: 11.7Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 500mA; Idm: 2A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±30V
On-state resistance: 11.7Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RF4C050APTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -20A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020-8S
Polarisation: unipolar
Power dissipation: 2W
Type of transistor: P-MOSFET
On-state resistance: 26mΩ
Drain current: -10A
Gate charge: 55nC
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -20A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020-8S
Polarisation: unipolar
Power dissipation: 2W
Type of transistor: P-MOSFET
On-state resistance: 26mΩ
Drain current: -10A
Gate charge: 55nC
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
товар відсутній
| RF4G060ATTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6A; Idm: -24A; 2W; DFN2020-8S
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 17.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6A; Idm: -24A; 2W; DFN2020-8S
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 17.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RF4L040ATTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 2W; DFN2020-8S
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 89mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 2W; DFN2020-8S
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 89mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RHP020N06T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RHP030N03T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RJP020N06T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RQ3E160ADTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 64A; 2W; HSMT8
Case: HSMT8
Mounting: SMD
On-state resistance: 7mΩ
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 64A
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 64A; 2W; HSMT8
Case: HSMT8
Mounting: SMD
On-state resistance: 7mΩ
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 64A
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| RS3E075ATTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSH065N06GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSH065N06TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSH070N05GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSH070N05TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSH070P05GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSH070P05TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSS060P05FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| UT6K30TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 223mΩ
Gate-source voltage: ±20V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 2.1nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 223mΩ
Gate-source voltage: ±20V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 2.1nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
товар відсутній
| UT6K3TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 63mΩ
Gate-source voltage: ±12V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: 5.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 63mΩ
Gate-source voltage: ±12V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: 5.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
товар відсутній
| RF4C100BCTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020-8S
Polarisation: unipolar
Power dissipation: 2W
Type of transistor: P-MOSFET
On-state resistance: 15.6mΩ
Drain current: -10A
Gate charge: 23.5nC
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -36A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020-8S
Polarisation: unipolar
Power dissipation: 2W
Type of transistor: P-MOSFET
On-state resistance: 15.6mΩ
Drain current: -10A
Gate charge: 23.5nC
Drain-source voltage: -20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -36A
товар відсутній
| RF4E075ATTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 21.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 21.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RF4E080BNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 17.6mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 17.6mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2954 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 31.54 грн |
| 64+ | 13.33 грн |
| 176+ | 12.6 грн |
| RF4E080GNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 17.6mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 17.6mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.75 грн |
| 16+ | 24.16 грн |
| 55+ | 15.59 грн |
| 151+ | 14.72 грн |
| RF4E100AJTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2989 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.85 грн |
| 13+ | 29.43 грн |
| 49+ | 17.75 грн |
| 133+ | 16.78 грн |
| RF4E110GNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RS3E180ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -72A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -72A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RS3L110ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14.3mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14.3mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RRH050P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
товар відсутній
| RRH140P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
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