RJ1G12BGNTLL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 40V 120A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: LPTL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Description: MOSFET N-CH 40V 120A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: LPTL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1000+ | 170.41 грн |
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Технічний опис RJ1G12BGNTLL Rohm Semiconductor
Description: MOSFET N-CH 40V 120A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: LPTL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V.
Інші пропозиції RJ1G12BGNTLL за ціною від 150.34 грн до 362.54 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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RJ1G12BGNTLL | Виробник : Rohm Semiconductor | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) LPTL T/R |
на замовлення 926 шт: термін постачання 21-31 дні (днів) |
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RJ1G12BGNTLL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 40V 120A LPTL Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: LPTL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V |
на замовлення 1804 шт: термін постачання 21-31 дні (днів) |
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RJ1G12BGNTLL | Виробник : ROHM Semiconductor | MOSFETs RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. |
на замовлення 1166 шт: термін постачання 21-30 дні (днів) |
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RJ1G12BGNTLL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.08mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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RJ1G12BGNTLL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.08mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |