| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDB5800 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK Technology: PowerTrench® Mounting: SMD Case: D2PAK Kind of package: reel; tape Drain-source voltage: 60V Drain current: 80A On-state resistance: 12.6mΩ Gate charge: 135nC Polarisation: unipolar Kind of channel: enhanced Power dissipation: 242W Gate-source voltage: ±20V Type of transistor: N-MOSFET |
на замовлення 725 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
FDC658P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SuperSOT-6 On-state resistance: 80mΩ Power dissipation: 1.6W Gate charge: 12nC Polarisation: unipolar Technology: PowerTrench® Drain current: -4A Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
 |
FDN358P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 1057 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
FDS2582 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8 Mounting: SMD On-state resistance: 146mΩ Type of transistor: N-MOSFET Drain-source voltage: 150V Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Case: SO8 Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Drain current: 2.6A |
на замовлення 907 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
FDT458P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223 Technology: PowerTrench® Mounting: SMD Case: SOT223 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3.4A On-state resistance: 210mΩ Gate charge: 3.5nC Polarisation: unipolar Kind of channel: enhanced Power dissipation: 3W Gate-source voltage: ±20V Type of transistor: P-MOSFET |
на замовлення 3964 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
FDC658AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±25V Case: SuperSOT-6 On-state resistance: 75mΩ Power dissipation: 1.6W Gate charge: 8.1nC Polarisation: unipolar Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: -4A Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
|
|
NC7SZ58P6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; configurable,multiple-function; IN: 3; SMD; SC70-6 Type of integrated circuit: digital Kind of gate: configurable; multiple-function Number of inputs: 3 Mounting: SMD Case: SC70-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger |
товар відсутній |
|||||||||||||||
 |
LM2931Z-5.0G | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 6...26V Manufacturer series: LM2931 |
на замовлення 1773 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
LM2931Z-5.0RAG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 6...26V |
товар відсутній |
|||||||||||||||
 |
MC14001UBDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 100ns Kind of package: tube Kind of gate: NOR Technology: CMOS Family: HEF4000B Case: SO14 Number of inputs: 2 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: quad; 4 |
товар відсутній |
|||||||||||||||
|
|
MC14001UBDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 100ns Kind of package: reel; tape Kind of gate: NOR Technology: CMOS Family: HEF4000B Case: SO14 Number of inputs: 2 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: quad; 4 |
товар відсутній |
|||||||||||||||
|
|
MC14106BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Number of channels: hex; 6 Case: SO14 Kind of package: tube Operating temperature: -55...125°C Delay time: 100ns Kind of input: with Schmitt trigger Kind of gate: NOT Technology: CMOS Family: HEF4000B Number of inputs: 1 Supply voltage: 3...18V DC Type of integrated circuit: digital |
товар відсутній |
|||||||||||||||
|
|
MC14106BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Number of channels: hex; 6 Case: SO14 Kind of package: reel; tape Operating temperature: -55...125°C Delay time: 100ns Kind of input: with Schmitt trigger Kind of gate: NOT Technology: CMOS Family: HEF4000B Number of inputs: 1 Supply voltage: 3...18V DC Type of integrated circuit: digital |
на замовлення 2285 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
MC14106BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Number of channels: hex; 6 Case: TSSOP14 Kind of package: reel; tape Operating temperature: -55...125°C Delay time: 100ns Kind of input: with Schmitt trigger Kind of gate: NOT Technology: CMOS Family: HEF4000B Number of inputs: 1 Supply voltage: 3...18V DC Type of integrated circuit: digital |
товар відсутній |
|||||||||||||||
 |
1SMB5935BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 27V; 13.9mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 27V Zener current: 13.9mA Mounting: SMD Tolerance: ±5% Zener resistance: 23Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
на замовлення 1481 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
NC7WZ125K8X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; VSOP8; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: VSOP8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 10µA |
товар відсутній |
|||||||||||||||
| NC7WZ125L8X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA Operating temperature: -40...85°C Type of integrated circuit: digital Number of channels: 2 Quiescent current: 10µA Kind of output: 3-state Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: MicroPak8 Supply voltage: 1.65...5.5V DC |
товар відсутній |
||||||||||||||||
| NL17SZ125DFT2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 1 Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC |
товар відсутній |
||||||||||||||||
 |
NL17SZ125DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; TSOP5; 1.65÷5.5VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 1 Quiescent current: 10µA Kind of output: 3-state Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: TSOP5 Supply voltage: 1.65...5.5V DC |
товар відсутній |
|||||||||||||||
| NL17SZ125XV5T2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 1 Quiescent current: 10µA Kind of output: 3-state Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SOT553 Supply voltage: 1.65...5.5V DC |
товар відсутній |
||||||||||||||||
| NL27WZ125USG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 2 Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC |
товар відсутній |
||||||||||||||||
 |
1N5370BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA Mounting: THT Kind of package: bulk Semiconductor structure: single diode Zener voltage: 56V Leakage current: 0.5µA Power dissipation: 5W Type of diode: Zener Case: CASE017AA Tolerance: ±5% |
товар відсутній |
|||||||||||||||
| FDMA1024NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6 Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.3nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6A Case: WDFN6 Drain-source voltage: 20V Drain current: 5A On-state resistance: 75mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||||
 |
HUF75545P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 73A Power dissipation: 270W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
FQD10N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
|
|
FDD10N20LZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 83W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
|
|
FQP10N20C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 6A Pulsed drain current: 38A Power dissipation: 72W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
| M74HCT4051ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Case: TSSOP16 Technology: CMOS; TTL Mounting: SMD Kind of package: reel; tape Manufacturer series: HCT Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Family: HCT Operating temperature: -55...125°C Number of inputs: 11 Supply voltage: 2...6V DC; 2...12V DC Type of integrated circuit: digital Number of channels: 1 |
товар відсутній |
||||||||||||||||
| M74HCT4053ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 2...6V DC; 2...12V DC Family: HCT Kind of package: reel; tape Operating temperature: -55...125°C |
товар відсутній |
||||||||||||||||
| M74HCT4094ADTR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 3-state,8bit,shift and store,register; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; register; shift and store Mounting: SMD Case: TSSOP16 Number of channels: 1 Operating temperature: -55...125°C Kind of package: reel; tape Technology: CMOS; TTL Manufacturer series: HCT Number of inputs: 4 Family: HCT Supply voltage: 4...5.5V DC Kind of output: 3-state |
товар відсутній |
||||||||||||||||
 |
FCPF20N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
MC33171DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Number of channels: 1 Case: SO8 Slew rate: 2.1V/μs Operating temperature: -40...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape |
на замовлення 1949 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| LM285Z-1.2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.235V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Kind of package: bulk Maximum output current: 20mA |
на замовлення 1499 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
 |
LM285Z-1.2RAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA Mounting: THT Case: TO92 Operating temperature: -40...85°C Tolerance: ±1% Maximum output current: 20mA Kind of package: reel; tape Type of integrated circuit: voltage reference source Reference voltage: 1.235V |
на замовлення 984 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| MC74ACT574DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Kind of output: 3-state |
товар відсутній |
||||||||||||||||
 |
MC74ACT574DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Manufacturer series: ACT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered Kind of output: 3-state |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
MC74ACT574DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Manufacturer series: ACT Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered Kind of output: 3-state |
на замовлення 389 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| NRVTSM245ET1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.65V Case: POWERMITE Kind of package: reel; tape Max. forward impulse current: 50A Application: automotive industry |
товар відсутній |
||||||||||||||||
| NRVTSM245ET3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.65V Case: POWERMITE Kind of package: reel; tape Max. forward impulse current: 50A Application: automotive industry |
товар відсутній |
||||||||||||||||
|
|
NDC7003P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.34A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
| NTGD1100LT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 8V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 0.43W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| NTGD4167CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 1.9/-1.4A Power dissipation: 0.9W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90/170mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| NTHC5513T1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.9/-3A Pulsed drain current: 12A Power dissipation: 2.1W Case: ChipFET Gate-source voltage: ±12V On-state resistance: 115/240mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| NTHD3100CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.9/-4.4A Pulsed drain current: 12A Power dissipation: 3.1W Case: ChipFET Gate-source voltage: ±12/±8V On-state resistance: 115/110mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2385 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
| NTHD3102CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 5.5/-4.2A Pulsed drain current: 16A Power dissipation: 0.6W Case: ChipFET Gate-source voltage: ±8/±8V On-state resistance: 37/83mΩ Mounting: SMD Gate charge: 5.8/6.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| NTHD4502NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2/2.9A Pulsed drain current: 16...12.6A Power dissipation: 0.6W Case: ChipFET Gate-source voltage: ±8/±8V On-state resistance: 37/83mΩ Mounting: SMD Gate charge: 5.8/6.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| NTHD4508NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.59W Case: ChipFET Gate-source voltage: ±12V On-state resistance: 80mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
|
|
NTJD4105CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-8V Drain current: 0.63/-0.755A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V; ±12V On-state resistance: 445/900mΩ Mounting: SMD Gate charge: 3/4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
|||||||||||||||
 |
NTJD4105CT2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-8V Drain current: 0.46/-0.558A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V; ±12V On-state resistance: 375/300mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
|
|
NTJD4401NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 445mΩ Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
NTJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.295A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| NTLJD3119CTBG | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 2.8/-2.4A Power dissipation: 1.5W Case: WDFN6 Gate-source voltage: ±8V On-state resistance: 65/100mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| NTUD3169CZT5G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.16/-0.14A Power dissipation: 0.125W Case: SOT963 Gate-source voltage: ±8V On-state resistance: 1.5/5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
||||||||||||||||
 |
NTZD3152PT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.43A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2950 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| NTD360N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.2A Pulsed drain current: 32.5A Power dissipation: 96W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| NTD600N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 60W On-state resistance: 0.55Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 21A Drain-source voltage: 800V Drain current: 5A |
товар відсутній |
||||||||||||||||
 |
1N4741ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 11V; DO41; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|||||||||||||||
 |
MC74HC390ADG | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Kind of package: tube Operating temperature: -55...125°C |
на замовлення 142 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
MC74HC390ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||||
| MC74HC390ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
товар відсутній |
| FDB5800 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK
Technology: PowerTrench®
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 12.6mΩ
Gate charge: 135nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 242W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK
Technology: PowerTrench®
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 12.6mΩ
Gate charge: 135nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 242W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
на замовлення 725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 192.32 грн |
| 5+ | 158.98 грн |
| 7+ | 130.67 грн |
| 17+ | 123.41 грн |
| FDC658P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SuperSOT-6
On-state resistance: 80mΩ
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4A
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SuperSOT-6
On-state resistance: 80mΩ
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4A
Kind of channel: enhanced
товар відсутній
| FDN358P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1057 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.58 грн |
| 22+ | 17.06 грн |
| 25+ | 15.46 грн |
| 66+ | 12.78 грн |
| 181+ | 12.12 грн |
| 1000+ | 11.62 грн |
| FDS2582 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Mounting: SMD
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Case: SO8
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 2.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Mounting: SMD
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Case: SO8
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 2.6A
на замовлення 907 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.49 грн |
| 7+ | 59.53 грн |
| 19+ | 45.01 грн |
| 51+ | 42.83 грн |
| FDT458P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223
Technology: PowerTrench®
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3.4A
On-state resistance: 210mΩ
Gate charge: 3.5nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223
Technology: PowerTrench®
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3.4A
On-state resistance: 210mΩ
Gate charge: 3.5nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
на замовлення 3964 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 32.84 грн |
| 25+ | 27.59 грн |
| 40+ | 20.33 грн |
| 109+ | 18.87 грн |
| FDC658AP |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Case: SuperSOT-6
On-state resistance: 75mΩ
Power dissipation: 1.6W
Gate charge: 8.1nC
Polarisation: unipolar
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: -4A
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Case: SuperSOT-6
On-state resistance: 75mΩ
Power dissipation: 1.6W
Gate charge: 8.1nC
Polarisation: unipolar
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: -4A
Kind of channel: enhanced
товар відсутній
| NC7SZ58P6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; SMD; SC70-6
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; SMD; SC70-6
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
товар відсутній
| LM2931Z-5.0G | |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 6...26V
Manufacturer series: LM2931
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 6...26V
Manufacturer series: LM2931
на замовлення 1773 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.92 грн |
| 25+ | 31.51 грн |
| 37+ | 23.59 грн |
| 100+ | 22.29 грн |
| LM2931Z-5.0RAG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 6...26V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 6...26V
товар відсутній
| MC14001UBDG | |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 100ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Case: SO14
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 100ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Case: SO14
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: quad; 4
товар відсутній
| MC14001UBDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 100ns
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Case: SO14
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 100ns
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Case: SO14
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: quad; 4
товар відсутній
| MC14106BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Kind of package: tube
Operating temperature: -55...125°C
Delay time: 100ns
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: CMOS
Family: HEF4000B
Number of inputs: 1
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Kind of package: tube
Operating temperature: -55...125°C
Delay time: 100ns
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: CMOS
Family: HEF4000B
Number of inputs: 1
Supply voltage: 3...18V DC
Type of integrated circuit: digital
товар відсутній
| MC14106BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Kind of package: reel; tape
Operating temperature: -55...125°C
Delay time: 100ns
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: CMOS
Family: HEF4000B
Number of inputs: 1
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Kind of package: reel; tape
Operating temperature: -55...125°C
Delay time: 100ns
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: CMOS
Family: HEF4000B
Number of inputs: 1
Supply voltage: 3...18V DC
Type of integrated circuit: digital
на замовлення 2285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.53 грн |
| 13+ | 28.53 грн |
| 51+ | 16.84 грн |
| 140+ | 15.9 грн |
| MC14106BDTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Number of channels: hex; 6
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -55...125°C
Delay time: 100ns
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: CMOS
Family: HEF4000B
Number of inputs: 1
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Number of channels: hex; 6
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -55...125°C
Delay time: 100ns
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: CMOS
Family: HEF4000B
Number of inputs: 1
Supply voltage: 3...18V DC
Type of integrated circuit: digital
товар відсутній
| 1SMB5935BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; 13.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Zener current: 13.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 23Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; 13.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Zener current: 13.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 23Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
на замовлення 1481 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 18.29 грн |
| 40+ | 9.07 грн |
| 100+ | 7.99 грн |
| 115+ | 7.48 грн |
| 315+ | 7.04 грн |
| NC7WZ125K8X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; VSOP8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: VSOP8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; VSOP8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: VSOP8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
товар відсутній
| NC7WZ125L8X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 2
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: MicroPak8
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 2
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: MicroPak8
Supply voltage: 1.65...5.5V DC
товар відсутній
| NL17SZ125DFT2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
товар відсутній
| NL17SZ125DTT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; TSOP5; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: TSOP5
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; TSOP5; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: TSOP5
Supply voltage: 1.65...5.5V DC
товар відсутній
| NL17SZ125XV5T2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
товар відсутній
| NL27WZ125USG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
товар відсутній
| 1N5370BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Zener voltage: 56V
Leakage current: 0.5µA
Power dissipation: 5W
Type of diode: Zener
Case: CASE017AA
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Zener voltage: 56V
Leakage current: 0.5µA
Power dissipation: 5W
Type of diode: Zener
Case: CASE017AA
Tolerance: ±5%
товар відсутній
| FDMA1024NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: WDFN6
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: WDFN6
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
товар відсутній
| HUF75545P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.93 грн |
| 8+ | 120.51 грн |
| 20+ | 113.97 грн |
| FQD10N20CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD10N20LZTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQP10N20C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| M74HCT4051ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Case: TSSOP16
Technology: CMOS; TTL
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: HCT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Family: HCT
Operating temperature: -55...125°C
Number of inputs: 11
Supply voltage: 2...6V DC; 2...12V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Case: TSSOP16
Technology: CMOS; TTL
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: HCT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Family: HCT
Operating temperature: -55...125°C
Number of inputs: 11
Supply voltage: 2...6V DC; 2...12V DC
Type of integrated circuit: digital
Number of channels: 1
товар відсутній
| M74HCT4053ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 2...6V DC; 2...12V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 2...6V DC; 2...12V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| M74HCT4094ADTR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 3-state,8bit,shift and store,register; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; register; shift and store
Mounting: SMD
Case: TSSOP16
Number of channels: 1
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS; TTL
Manufacturer series: HCT
Number of inputs: 4
Family: HCT
Supply voltage: 4...5.5V DC
Kind of output: 3-state
Category: Shift registers
Description: IC: digital; 3-state,8bit,shift and store,register; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; register; shift and store
Mounting: SMD
Case: TSSOP16
Number of channels: 1
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS; TTL
Manufacturer series: HCT
Number of inputs: 4
Family: HCT
Supply voltage: 4...5.5V DC
Kind of output: 3-state
товар відсутній
| FCPF20N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 363.53 грн |
| 3+ | 303.45 грн |
| 4+ | 234.48 грн |
| 10+ | 221.42 грн |
| MC33171DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
на замовлення 1949 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.14 грн |
| 10+ | 37.17 грн |
| 25+ | 31.72 грн |
| 31+ | 28.31 грн |
| 83+ | 26.86 грн |
| LM285Z-1.2G | |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: bulk
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: bulk
Maximum output current: 20mA
на замовлення 1499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 43.55 грн |
| 25+ | 36.52 грн |
| 30+ | 27.93 грн |
| 82+ | 26.4 грн |
| LM285Z-1.2RAG |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Tolerance: ±1%
Maximum output current: 20mA
Kind of package: reel; tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Tolerance: ±1%
Maximum output current: 20mA
Kind of package: reel; tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
на замовлення 984 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.17 грн |
| 11+ | 34.85 грн |
| 25+ | 32.96 грн |
| 34+ | 25.63 грн |
| 92+ | 24.17 грн |
| MC74ACT574DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Kind of output: 3-state
товар відсутній
| MC74ACT574DWG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Kind of output: 3-state
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 62.54 грн |
| 8+ | 50.82 грн |
| 25+ | 34.56 грн |
| 68+ | 32.68 грн |
| MC74ACT574DWR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Kind of output: 3-state
на замовлення 389 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 90.69 грн |
| 7+ | 60.04 грн |
| 25+ | 35.03 грн |
| 67+ | 33.12 грн |
| NRVTSM245ET1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: POWERMITE
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: POWERMITE
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
товар відсутній
| NRVTSM245ET3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: POWERMITE
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: POWERMITE
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
товар відсутній
| NDC7003P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGD1100LT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 0.43W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 0.43W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGD4167CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 1.9/-1.4A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90/170mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 1.9/-1.4A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90/170mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTHC5513T1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-3A
Pulsed drain current: 12A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 115/240mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-3A
Pulsed drain current: 12A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 115/240mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTHD3100CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-4.4A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: ChipFET
Gate-source voltage: ±12/±8V
On-state resistance: 115/110mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-4.4A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: ChipFET
Gate-source voltage: ±12/±8V
On-state resistance: 115/110mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2385 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.36 грн |
| 8+ | 49.22 грн |
| 25+ | 35.35 грн |
| 67+ | 33.39 грн |
| 500+ | 32.81 грн |
| NTHD3102CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 5.5/-4.2A
Pulsed drain current: 16A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 5.5/-4.2A
Pulsed drain current: 16A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTHD4502NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2/2.9A
Pulsed drain current: 16...12.6A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2/2.9A
Pulsed drain current: 16...12.6A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTHD4508NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.59W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.59W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTJD4105CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.63/-0.755A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 445/900mΩ
Mounting: SMD
Gate charge: 3/4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.63/-0.755A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 445/900mΩ
Mounting: SMD
Gate charge: 3/4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| NTJD4105CT2G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.46/-0.558A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 375/300mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.46/-0.558A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 375/300mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTJD4401NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 445mΩ
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 445mΩ
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.93 грн |
| 19+ | 19.89 грн |
| 25+ | 15.83 грн |
| 100+ | 10.89 грн |
| 117+ | 7.33 грн |
| 322+ | 6.9 грн |
| 1000+ | 6.61 грн |
| NTJD5121NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 105 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.89 грн |
| 31+ | 12.05 грн |
| 50+ | 8 грн |
| 100+ | 6.76 грн |
| NTLJD3119CTBG |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.8/-2.4A
Power dissipation: 1.5W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 65/100mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.8/-2.4A
Power dissipation: 1.5W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 65/100mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTUD3169CZT5G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.16/-0.14A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5/5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.16/-0.14A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5/5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| NTZD3152PT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 23.45 грн |
| 22+ | 17.21 грн |
| 26+ | 14.16 грн |
| 100+ | 10.09 грн |
| 111+ | 7.69 грн |
| 305+ | 7.27 грн |
| 500+ | 6.97 грн |
| NTD360N80S3Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTD600N80S3Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 60W
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 21A
Drain-source voltage: 800V
Drain current: 5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 60W
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 21A
Drain-source voltage: 800V
Drain current: 5A
товар відсутній
| 1N4741ATR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; DO41; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; DO41; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| MC74HC390ADG |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
на замовлення 142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.98 грн |
| 10+ | 46.9 грн |
| 26+ | 33.63 грн |
| 70+ | 31.8 грн |
| MC74HC390ADR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| MC74HC390ADTR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній