Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 64 з 69
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MSCGTQ100HD65C1AG | MICROCHIP (MICROSEMI) |
 MSCGTQ100HD65C1AG IGBT modules |
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| MSCM20AM058G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Case: LP8 Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 250A On-state resistance: 5mΩ Mechanical mounting: screw |
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| MSCM20AM058G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Case: LP8 Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 250A On-state resistance: 5mΩ Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MSCM20XM10T3XG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge Case: SP3X Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 84A On-state resistance: 10mΩ Mechanical mounting: screw |
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| MSCM20XM10T3XG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge Case: SP3X Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 84A On-state resistance: 10mΩ Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MSCM20XM16F4G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge Case: SP4 Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 16mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MSCM20XM16F4G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge Case: SP4 Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 16mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MSCMC90AM12C3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 900V Case: SP3F Topology: Vienna Rectifier Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw |
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| MSCMC90AM12C3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 900V Case: SP3F Topology: Vienna Rectifier Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MSCSM120AM027CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM027CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM027CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW Case: SP6C Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM027CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW Case: SP6C Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM042CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 990A Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor |
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| MSCSM120AM042CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 990A Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| MSCSM120AM042CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 990A Case: SP6C Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor |
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| MSCSM120AM042CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 990A Case: SP6C Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| MSCSM120AM08CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 675A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 268A On-state resistance: 7.8mΩ Power dissipation: 1409W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM08CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 675A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 268A On-state resistance: 7.8mΩ Power dissipation: 1409W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM16CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM16CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM31CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM31CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM50CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM50CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120DAM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: boost chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120DAM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: boost chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120HM16CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120HM16CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120HM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120HM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120HM50CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120HM50CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120SKM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: buck chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120SKM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: buck chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120TAM11CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120TAM11CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120TAM16CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 136A On-state resistance: 16mΩ Power dissipation: 728W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120TAM16CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 136A On-state resistance: 16mΩ Power dissipation: 728W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120TAM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120TAM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM70AM025CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw Case: D3 Topology: MOSFET half-bridge Semiconductor structure: transistor/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM70AM025CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw Case: D3 Topology: MOSFET half-bridge Semiconductor structure: transistor/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM70AM025CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw Case: SP6C Topology: MOSFET half-bridge Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM70AM025CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw Case: SP6C Topology: MOSFET half-bridge Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM70AM07CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 700A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 281A On-state resistance: 6.4mΩ Power dissipation: 988W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |
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| MSCSM70AM07CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 700A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 281A On-state resistance: 6.4mΩ Power dissipation: 988W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
товар відсутній |
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| MSCSM70AM10CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 482A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 192A On-state resistance: 9.5mΩ Power dissipation: 690W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |
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| MSCSM70AM10CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 482A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 192A On-state resistance: 9.5mΩ Power dissipation: 690W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
товар відсутній |
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| MSCSM70AM19CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |
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| MSCSM70AM19CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
товар відсутній |
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| MSCSM70HM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |
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| MSCSM70HM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
товар відсутній |
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| MSCSM70TAM05TPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W Case: SP6P Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 700A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 278A On-state resistance: 6.4mΩ Power dissipation: 966W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |
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| MSCSM70TAM05TPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W Case: SP6P Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 700A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 278A On-state resistance: 6.4mΩ Power dissipation: 966W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
товар відсутній |
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| MSCSM70TAM10CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 476A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |
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| MSCSM70TAM10CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 476A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
товар відсутній |
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| MSCSM70TAM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |
| MSCM20AM058G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: LP8
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 250A
On-state resistance: 5mΩ
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: LP8
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 250A
On-state resistance: 5mΩ
Mechanical mounting: screw
товар відсутній
| MSCM20AM058G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: LP8
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 250A
On-state resistance: 5mΩ
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: LP8
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 250A
On-state resistance: 5mΩ
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MSCM20XM10T3XG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP3X
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 10mΩ
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP3X
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 10mΩ
Mechanical mounting: screw
товар відсутній
| MSCM20XM10T3XG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP3X
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 10mΩ
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP3X
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 10mΩ
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MSCM20XM16F4G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP4
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 16mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP4
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 16mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MSCM20XM16F4G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP4
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 16mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP4
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 16mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MSCMC90AM12C3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 900V
Case: SP3F
Topology: Vienna Rectifier
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 900V
Case: SP3F
Topology: Vienna Rectifier
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
товар відсутній
| MSCMC90AM12C3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 900V
Case: SP3F
Topology: Vienna Rectifier
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 900V
Case: SP3F
Topology: Vienna Rectifier
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM027CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM027CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM027CT6AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM027CT6AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM042CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 990A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 990A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
товар відсутній
| MSCSM120AM042CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 990A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 990A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM042CT6AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 990A
Case: SP6C
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 990A
Case: SP6C
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
товар відсутній
| MSCSM120AM042CT6AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 990A
Case: SP6C
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 990A
Case: SP6C
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM08CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM08CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM16CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM16CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM31CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM31CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM50CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM50CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120DAM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: boost chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: boost chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120DAM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: boost chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: boost chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120HM16CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120HM16CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120HM31CT3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120HM31CT3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120HM50CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120HM50CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120SKM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120SKM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120TAM11CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120TAM11CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120TAM16CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120TAM16CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120TAM31CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120TAM31CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM025CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM70AM025CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM025CT6AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM70AM025CT6AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM07CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM70AM07CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM10CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM70AM10CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM19CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM70AM19CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70HM19CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM70HM19CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70TAM05TPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM70TAM05TPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70TAM10CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM70TAM10CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70TAM19CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній