APT6025SVRG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Mounting: SMD
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Case: D3PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Mounting: SMD
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Case: D3PAK
кількість в упаковці: 1 шт
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Технічний опис APT6025SVRG MICROCHIP (MICROSEMI)
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A, Mounting: SMD, Drain-source voltage: 600V, Drain current: 25A, On-state resistance: 0.25Ω, Type of transistor: N-MOSFET, Power dissipation: 370W, Polarisation: unipolar, Gate charge: 275nC, Technology: POWER MOS 5®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 100A, Case: D3PAK, кількість в упаковці: 1 шт.
Інші пропозиції APT6025SVRG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT6025SVRG | Виробник : Microchip Technology | Description: MOSFET N-CH 600V 25A D3PAK |
товар відсутній |
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APT6025SVRG | Виробник : Microchip / Microsemi | MOSFET FG, MOSFET, 600V, 0.25_OHM, D3, TO-268, RoHS |
товар відсутній |
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APT6025SVRG | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A Mounting: SMD Drain-source voltage: 600V Drain current: 25A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 370W Polarisation: unipolar Gate charge: 275nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Case: D3PAK |
товар відсутній |