APT47N60BC3G Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 943.87 грн |
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Технічний опис APT47N60BC3G Microchip Technology
Description: MOSFET N-CH 600V 47A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V.
Інші пропозиції APT47N60BC3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT47N60BC3G | Виробник : Microchip Technology | Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT47N60BC3G | Виробник : Microchip Technology | Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT47N60BC3G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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APT47N60BC3G | Виробник : MICROSEMI |
TO 247/MOSFET N-CH 47A 600V APT47N кількість в упаковці: 30 шт |
товар відсутній |
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APT47N60BC3G | Виробник : Microchip Technology | MOSFETs MOSFET COOLMOS 600 V 47 A TO-247 |
товар відсутній |
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APT47N60BC3G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |