Технічний опис DMA30P1200HB Littelfuse
Description: DIODE GEN PURP 1.2KV 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 11pF @ 400V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247 (IXTH), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V.
Інші пропозиції DMA30P1200HB
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMA30P1200HB | Виробник : IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 30A Type of diode: rectifying Max. forward impulse current: 370A кількість в упаковці: 1 шт |
товар відсутній |
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DMA30P1200HB | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 11pF @ 400V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 (IXTH) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V |
товар відсутній |
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![]() |
DMA30P1200HB | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
DMA30P1200HB | Виробник : IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 30A Type of diode: rectifying Max. forward impulse current: 370A |
товар відсутній |