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FMD47-06KC5 IXYS
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Mounting: THT
Features of semiconductor devices: super junction coolmos
Gate charge: 150nC
Technology: HiPerDynFRED
Kind of channel: enhanced
Gate-source voltage: ±20V
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 32A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
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Технічний опис FMD47-06KC5 IXYS
Description: MOSFET N-CH 600V 47A I4PAC, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: ISOPLUS i4-PAC™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V.
Інші пропозиції FMD47-06KC5
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FMD47-06KC5 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: ISOPLUS i4-PAC™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
товар відсутній |
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FMD47-06KC5 | Виробник : IXYS |
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товар відсутній |
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FMD47-06KC5 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A Mounting: THT Features of semiconductor devices: super junction coolmos Gate charge: 150nC Technology: HiPerDynFRED Kind of channel: enhanced Gate-source voltage: ±20V Topology: boost chopper Case: ISOPLUS i4-pac™ x024a Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 32A On-state resistance: 45mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube |
товар відсутній |