Технічний опис FMD40-06KC Littelfuse
Category: THT N channel transistors, Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 38A; 280W, Mounting: THT, Features of semiconductor devices: super junction coolmos, Gate charge: 250nC, Technology: HiPerDynFRED, Kind of channel: enhanced, Gate-source voltage: ±20V, Topology: boost chopper, Case: ISOPLUS i4-pac™ x024a, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Drain current: 38A, On-state resistance: 70mΩ, Type of transistor: N-MOSFET, Power dissipation: 280W, Polarisation: unipolar, Kind of package: tube, кількість в упаковці: 1 шт.
Інші пропозиції FMD40-06KC
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FMD40-06KC | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 38A; 280W Mounting: THT Features of semiconductor devices: super junction coolmos Gate charge: 250nC Technology: HiPerDynFRED Kind of channel: enhanced Gate-source voltage: ±20V Topology: boost chopper Case: ISOPLUS i4-pac™ x024a Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
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| FMD40-06KC | Виробник : IXYS |
Description: MOSFET N-CH 600V 38A I4PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: ISOPLUS i4-PAC™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
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FMD40-06KC | Виробник : IXYS |
MOSFET 40 Amps 600V |
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FMD40-06KC | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 38A; 280W Mounting: THT Features of semiconductor devices: super junction coolmos Gate charge: 250nC Technology: HiPerDynFRED Kind of channel: enhanced Gate-source voltage: ±20V Topology: boost chopper Case: ISOPLUS i4-pac™ x024a Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube |
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