Технічний опис MIXA10W1200TML Littelfuse
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: fans; for pump; motors, Case: E1-Pack, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Sonic FRD™; XPT™, Topology: IGBT three-phase bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 12A, Pulsed collector current: 30A, Power dissipation: 65W, кількість в упаковці: 1 шт.
Інші пропозиції MIXA10W1200TML
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MIXA10W1200TML | Виробник : IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: fans; for pump; motors Case: E1-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 30A Power dissipation: 65W кількість в упаковці: 1 шт |
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MIXA10W1200TML | Виробник : IXYS |
![]() Packaging: Box Package / Case: E1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A NTC Thermistor: Yes Supplier Device Package: E1 IGBT Type: PT Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 65 W Current - Collector Cutoff (Max): 150 µA |
товар відсутній |
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MIXA10W1200TML | Виробник : IXYS |
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товар відсутній |
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MIXA10W1200TML | Виробник : IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: fans; for pump; motors Case: E1-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 30A Power dissipation: 65W |
товар відсутній |