IXFK27N80Q Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 800V 27A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Description: MOSFET N-CH 800V 27A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1589.95 грн |
25+ | 1046.92 грн |
100+ | 1043.24 грн |
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Технічний опис IXFK27N80Q Littelfuse Inc.
Description: MOSFET N-CH 800V 27A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V.
Інші пропозиції IXFK27N80Q
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFK27N80Q | Виробник : Littelfuse | Trans MOSFET N-CH 800V 27A 3-Pin(3+Tab) TO-264AA |
товару немає в наявності |
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IXFK27N80Q | Виробник : Littelfuse | Trans MOSFET N-CH 800V 27A 3-Pin(3+Tab) TO-264AA |
товару немає в наявності |
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IXFK27N80Q | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFK27N80Q | Виробник : IXYS | MOSFETs 27 Amps 800V 0.32 Rds |
товару немає в наявності |
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IXFK27N80Q | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |