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IS61QDPB44M18A-400M3L ISSI IS61QDPB42M36A1-500M3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
IS66WVH16M8DALL-166B1LI ISSI IS66WVH16M8DALL-166B1LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Kind of package: in-tray; tube
товар відсутній
IS66WVH16M8DBLL-100B1LI ISSI IS66WVH16M8DALL-166B1LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Kind of package: in-tray; tube
товар відсутній
IS66WVO32M8DALL-200BLI ISSI IS66WVO32M8DALL-200BLI.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 1.8V
Kind of package: in-tray; tube
товар відсутній
IS66WV1M16EBLL-55BLI ISSI IS66WV1M16EBLL-55BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 55ns
товар відсутній
IS66WV1M16EBLL-55BLI-TR ISSI IS66WV1M16EBLL-55BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 55ns
товар відсутній
IS66WV1M16EBLL-70BLI ISSI IS66WV1M16EBLL-55BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 70ns
товар відсутній
IS64LF12836A-7.5B3LA3-TR ISSI IS61LF12836A-7.5TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
товар відсутній
IS29GL256-70DLEB ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70DLET ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70FLEB ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70FLET ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70SLEB ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70SLET ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70DLEB-TR ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70DLET-TR ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70FLET-TR ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70SLEB-TR ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70SLET-TR ISSI IS29GL128-70DLEB.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS61NLP12836B-200TQLI IS61NLP12836B-200TQLI ISSI IS61NLP12836B-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
товар відсутній
IS61NLP12836B-200TQLI-TR IS61NLP12836B-200TQLI-TR ISSI IS61NLP12836B-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
товар відсутній
IS61NLP12836EC-200B3LI ISSI IS61NLP12836EC-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
товар відсутній
IS61NLP12836EC-200B3LI-TR ISSI IS61NLP12836EC-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
товар відсутній
IS25LP128-JBLE-TR IS25LP128-JBLE-TR ISSI IS25LP128-JBLE.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS25LP128-JKLE-TR IS25LP128-JKLE-TR ISSI IS25LP128-JBLE.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: WSON8
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS25LP128-JLLE-TR IS25LP128-JLLE-TR ISSI IS25LP128-JBLE.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: WSON8
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS25LP128-JMLE-TR ISSI IS25LP128-JBLE.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: SO16
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS25LP128F-JBLA3 IS25LP128F-JBLA3 ISSI IS25LP128F-JBLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Case: SO8
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 166MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS62C256AL-45TLI IS62C256AL-45TLI ISSI 62-65C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
4+102.4 грн
5+ 91.37 грн
25+ 85.43 грн
Мінімальне замовлення: 4
IS62C256AL-45ULI IS62C256AL-45ULI ISSI 62-65C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
4+102.51 грн
10+ 95.83 грн
25+ 90.63 грн
Мінімальне замовлення: 4
IS62C256AL-25ULI ISSI 62-65C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C25616BL-45TLI ISSI 62-65C25616BL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
товар відсутній
IS62C256AL-25ULI-TR ISSI 62-65C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C256AL-45TLI-TR ISSI 62-65C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C256AL-45ULI-TR IS62C256AL-45ULI-TR ISSI 62-65C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32x8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C25616BL-45TLI-TR ISSI 62-65C25616BL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
товар відсутній
IS64WV51216BLL-10CTLA3 ISSI IS61WV51216BLL-10MLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216BLL-10CTLA3-TR ISSI IS61WV51216BLL-10MLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216BLL-10MLA3 ISSI IS61WV51216BLL-10MLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216BLL-10MLA3-TR ISSI IS61WV51216BLL-10MLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216BLL-10MLI ISSI IS61WV51216BLL-10MLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216BLL-10MLI-TR ISSI IS61WV51216BLL-10MLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS66WV51216EALL-70BLI-TR ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...1.95V
товар відсутній
IS66WV51216EBLL-55TLI ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-55TLI-TR ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-70BLI ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-70BLI-TR ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-70TLI ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-70TLI-TR ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
IS61LPS25636B-200TQLI ISSI IS61LPS25636B-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61LPS25636B-200TQLI-TR ISSI IS61LPS25636B-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61LPS51236B-200B3LI ISSI IS61LPS51236B-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61LPS51236B-200B3LI-TR ISSI IS61LPS51236B-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61LPS51236B-200TQLI ISSI IS61LPS51236B-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61LPS51236B-200TQLI-TR ISSI IS61LPS51236B-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61NLP25636B-200B3LI ISSI IS61NLP25636B-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61NLP25636B-200B3LI-TR ISSI IS61NLP25636B-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61NLP25636B-200TQLI ISSI IS61NLP25636B-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61NLP25636B-200TQLI-TR ISSI IS61NLP25636B-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61NLP51236B-200B3LI ISSI IS61NLP102418B-200B3L.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61QDPB44M18A-400M3L IS61QDPB42M36A1-500M3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
IS66WVH16M8DALL-166B1LI IS66WVH16M8DALL-166B1LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Kind of package: in-tray; tube
товар відсутній
IS66WVH16M8DBLL-100B1LI IS66WVH16M8DALL-166B1LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Kind of package: in-tray; tube
товар відсутній
IS66WVO32M8DALL-200BLI IS66WVO32M8DALL-200BLI.pdf
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 1.8V
Kind of package: in-tray; tube
товар відсутній
IS66WV1M16EBLL-55BLI IS66WV1M16EBLL-55BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 55ns
товар відсутній
IS66WV1M16EBLL-55BLI-TR IS66WV1M16EBLL-55BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 55ns
товар відсутній
IS66WV1M16EBLL-70BLI IS66WV1M16EBLL-55BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 70ns
товар відсутній
IS64LF12836A-7.5B3LA3-TR IS61LF12836A-7.5TQLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
товар відсутній
IS29GL256-70DLEB IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70DLET IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70FLEB IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70FLET IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70SLEB IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70SLET IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70DLEB-TR IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70DLET-TR IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70FLET-TR IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70SLEB-TR IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS29GL256-70SLET-TR IS29GL128-70DLEB.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
IS61NLP12836B-200TQLI IS61NLP12836B-200TQLI.pdf
IS61NLP12836B-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
товар відсутній
IS61NLP12836B-200TQLI-TR IS61NLP12836B-200TQLI.pdf
IS61NLP12836B-200TQLI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
товар відсутній
IS61NLP12836EC-200B3LI IS61NLP12836EC-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
товар відсутній
IS61NLP12836EC-200B3LI-TR IS61NLP12836EC-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
товар відсутній
IS25LP128-JBLE-TR IS25LP128-JBLE.pdf
IS25LP128-JBLE-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS25LP128-JKLE-TR IS25LP128-JBLE.pdf
IS25LP128-JKLE-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: WSON8
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS25LP128-JLLE-TR IS25LP128-JBLE.pdf
IS25LP128-JLLE-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: WSON8
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS25LP128-JMLE-TR IS25LP128-JBLE.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: SO16
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS25LP128F-JBLA3 IS25LP128F-JBLA3.pdf
IS25LP128F-JBLA3
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Case: SO8
Mounting: SMD
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 166MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
товар відсутній
IS62C256AL-45TLI 62-65C256AL.pdf
IS62C256AL-45TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+102.4 грн
5+ 91.37 грн
25+ 85.43 грн
Мінімальне замовлення: 4
IS62C256AL-45ULI 62-65C256AL.pdf
IS62C256AL-45ULI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+102.51 грн
10+ 95.83 грн
25+ 90.63 грн
Мінімальне замовлення: 4
IS62C256AL-25ULI 62-65C256AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C25616BL-45TLI 62-65C25616BL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
товар відсутній
IS62C256AL-25ULI-TR 62-65C256AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C256AL-45TLI-TR 62-65C256AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C256AL-45ULI-TR 62-65C256AL.pdf
IS62C256AL-45ULI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32x8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
IS62C25616BL-45TLI-TR 62-65C25616BL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
товар відсутній
IS64WV51216BLL-10CTLA3 IS61WV51216BLL-10MLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216BLL-10CTLA3-TR IS61WV51216BLL-10MLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216BLL-10MLA3 IS61WV51216BLL-10MLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS64WV51216BLL-10MLA3-TR IS61WV51216BLL-10MLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216BLL-10MLI IS61WV51216BLL-10MLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV51216BLL-10MLI-TR IS61WV51216BLL-10MLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
IS66WV51216EALL-70BLI-TR IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...1.95V
товар відсутній
IS66WV51216EBLL-55TLI IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-55TLI-TR IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-70BLI IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-70BLI-TR IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-70TLI IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
IS66WV51216EBLL-70TLI-TR IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
IS61LPS25636B-200TQLI IS61LPS25636B-200TQLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61LPS25636B-200TQLI-TR IS61LPS25636B-200TQLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61LPS51236B-200B3LI IS61LPS51236B-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61LPS51236B-200B3LI-TR IS61LPS51236B-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61LPS51236B-200TQLI IS61LPS51236B-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61LPS51236B-200TQLI-TR IS61LPS51236B-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
IS61NLP25636B-200B3LI IS61NLP25636B-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61NLP25636B-200B3LI-TR IS61NLP25636B-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61NLP25636B-200TQLI IS61NLP25636B-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61NLP25636B-200TQLI-TR IS61NLP25636B-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
товар відсутній
IS61NLP51236B-200B3LI IS61NLP102418B-200B3L.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
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