| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS45S16400J-7TLA1-TR | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS45S16400J-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS45S16800F-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-6BLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-6CTLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-6TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54 Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7CTLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7CTLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7CTLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7CTLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S16800F-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
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| IS45S32200L-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32200L-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32200L-6TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS45S32200L-6TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32200L-6TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512kx32bitx4; 166MHz; 6ns; TSOP86 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS45S32200L-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32200L-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512kx32bitx4; 143MHz; 7ns; TFBGA90; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA90 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS45S32200L-7TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32200L-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS45S32400F-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32400F-6BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32400F-6BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷105°C Kind of package: reel; tape Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Operating temperature: -40...105°C Clock frequency: 166MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns |
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| IS45S32400F-6TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32400F-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32400F-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32400F-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 143MHz; 7ns; TFBGA90; -40÷105°C Kind of package: reel; tape Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Operating temperature: -40...105°C Clock frequency: 143MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 7ns |
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| IS45S32400F-7TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32400F-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS45S32400F-7TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS45S32400F-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II; -40÷105°C Kind of package: reel; tape Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Operating temperature: -40...105°C Clock frequency: 143MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: TSOP86 II Kind of memory: SDRAM Mounting: SMD Access time: 7ns |
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| IS45S32800J-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC Access time: 6ns |
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| IS45S32800J-6BLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC Access time: 6ns |
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| IS45S32800J-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx32bitx4; 166MHz; 6ns; TSOP86 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS46DR16128C-3DBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84 Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 15ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 333MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC |
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| IS46DR16160B-3DBLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
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| IS46DR16160B-3DBLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
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| IS46DR16320E-3DBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
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| IS46DR16640C-3DBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
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| IS46LR16320C-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS46LR16320C-6BLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS46LR16320C-6BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS46LR32160C-6BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS46LR32160C-6BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Case: TFBGA90 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 1.7...1.95V DC Memory: 512Mb DRAM Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel |
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| IS46R16160F-5TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товар відсутній |
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| IS46R16160F-6BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товар відсутній |
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| IS46R16160F-6TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товар відсутній |
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| IS46TR16128C-15HBLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
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| IS46TR16128C-15HBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
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| IS46TR16128C-125KBLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
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| IS46TR16128C-125KBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
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| IS46TR16128CL-125KBLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
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| IS46TR16128CL-15HBLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 933MHz; 13.5ns; TWBGA96; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Clock frequency: 933MHz Access time: 13.5ns Case: TWBGA96 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
товар відсутній |
| IS45S16400J-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16400J-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16800F-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-6BLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-6CTLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-6TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7CTLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7CTLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7CTLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7CTLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S16800F-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS45S32200L-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32200L-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32200L-6TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32200L-6TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32200L-6TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx4; 166MHz; 6ns; TSOP86 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx4; 166MHz; 6ns; TSOP86 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32200L-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32200L-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx4; 143MHz; 7ns; TFBGA90; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA90
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx4; 143MHz; 7ns; TFBGA90; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA90
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32200L-7TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32200L-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-6BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-6BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷105°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 166MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷105°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 166MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
товар відсутній
| IS45S32400F-6TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 143MHz; 7ns; TFBGA90; -40÷105°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 143MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 143MHz; 7ns; TFBGA90; -40÷105°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 143MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7ns
товар відсутній
| IS45S32400F-7TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-7TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S32400F-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II; -40÷105°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 143MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: TSOP86 II
Kind of memory: SDRAM
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II; -40÷105°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 143MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: TSOP86 II
Kind of memory: SDRAM
Mounting: SMD
Access time: 7ns
товар відсутній
| IS45S32800J-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Access time: 6ns
товар відсутній
| IS45S32800J-6BLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Access time: 6ns
товар відсутній
| IS45S32800J-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx32bitx4; 166MHz; 6ns; TSOP86 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx32bitx4; 166MHz; 6ns; TSOP86 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS46DR16128C-3DBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA84
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 15ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 333MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS46DR16160B-3DBLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS46DR16160B-3DBLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS46DR16320E-3DBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS46DR16640C-3DBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS46LR16320C-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS46LR16320C-6BLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS46LR16320C-6BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS46LR32160C-6BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS46LR32160C-6BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Memory: 512Mb DRAM
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Memory: 512Mb DRAM
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
товар відсутній
| IS46R16160F-5TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS46R16160F-6BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS46R16160F-6TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS46TR16128C-15HBLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS46TR16128C-15HBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS46TR16128C-125KBLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS46TR16128C-125KBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS46TR16128CL-125KBLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS46TR16128CL-15HBLA1 |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 933MHz; 13.5ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Clock frequency: 933MHz
Access time: 13.5ns
Case: TWBGA96
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 933MHz; 13.5ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Clock frequency: 933MHz
Access time: 13.5ns
Case: TWBGA96
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товар відсутній