Технічний опис IS61LPS25636B-200TQLI-TR ISSI
Description: IC SRAM 9MBIT PARALLEL 100LQFP, Packaging: Tape & Reel (TR), Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 9Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 256K x 36, DigiKey Programmable: Not Verified.
Інші пропозиції IS61LPS25636B-200TQLI-TR
| Фото | Назва | Виробник | Інформація |
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| IS61LPS25636B-200TQLI-TR | Виробник : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 9Mb SRAM кількість в упаковці: 800 шт |
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IS61LPS25636B-200TQLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 9MBIT PARALLEL 100LQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Memory Interface: Parallel Access Time: 3.1 ns Memory Organization: 256K x 36 DigiKey Programmable: Not Verified |
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IS61LPS25636B-200TQLI-TR | Виробник : ISSI |
SRAM 8Mb,Pipeline,Sync,256K x 36,200Mhz,3.3v I/O,100 Pin TQFP,3CE, RoHS |
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| IS61LPS25636B-200TQLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 9Mb SRAM |
товар відсутній |