IS66WV51216EBLL-70TLI ISSI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 1 шт
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Технічний опис IS66WV51216EBLL-70TLI ISSI
Description: IC PSRAM 8MBIT PAR 44TSOP II, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.5V ~ 3.6V, Technology: PSRAM (Pseudo SRAM), Memory Format: PSRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS66WV51216EBLL-70TLI
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IS66WV51216EBLL-70TLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 8MBIT PAR 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Memory Format: PSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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IS66WV51216EBLL-70TLI | Виробник : ISSI | SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v~3.6v,44 Pin TSOP II, RoHS |
товар відсутній |
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IS66WV51216EBLL-70TLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 70ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V |
товар відсутній |