| Фото | Назва | Виробник | Інформація |
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| IS61WV25616BLL-10TLI-TR | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS61WV3216DBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS25WP016D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 1.65...1.95V |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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IS25WP032D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32Mb; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 32Mb Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 1.65...1.95V |
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IS25LP064D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
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IS25WP064D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64Mb; DTR,QPI,SPI; 166MHz; 1.65÷1.95V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 64Mb Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 1.65...1.95V |
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IS25LP064D-JKLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP080D-JKLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 8Mb; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 8Mb Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25WP032D-JKLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32Mb; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 32Mb Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 1.65...1.95V |
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IS25WP064D-JKLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64Mb; DTR,QPI,SPI; 166MHz; 1.65÷1.95V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 64Mb Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 1.65...1.95V |
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IS61C5128AL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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| IS61C5128AL-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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IS61C5128AS-25QLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 25ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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IS61C5128AS-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 25ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS61C5128AS-25HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 25ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS25LP020E-JYLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP064A-JBLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP064A-JKLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP064A-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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| IS25LP064A-JMLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP064D-JBLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
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| IS63WV1024BLL-12HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64kx16bit; 3.3V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
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| IS63WV1024BLL-12HLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; STSOP32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 12ns Case: STSOP32 Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
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| IS63WV1024BLL-12JLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; SOJ32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
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| IS63WV1024BLL-12TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 12ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
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| IS63WV1024BLL-12BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; TFBGA48; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 12ns Case: TFBGA48 Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61WV5128EDBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV5128EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS64WV5128EDBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS64WV5128EDBLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS61C5128AS-25QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 25ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS61C5128AS-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 25ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS62C5128BL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel Mounting: SMD Operating temperature: -40...85°C Case: TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx8bit Access time: 45ns Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 5V |
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| IS65C256AL-25ULA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 25ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 5V |
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| IS65C256AL-25ULA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 25ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 5V |
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IS62LV256AL-45ULI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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| IS61LV256AL-10JLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel Case: SOP28 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 256kb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 10ns |
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| IS62LV256AL-45ULI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 45ns Kind of interface: parallel Memory: 256kb SRAM Mounting: SMD Operating temperature: -40...85°C Case: SOP28 Operating voltage: 3.3V Type of integrated circuit: SRAM memory |
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| IS29GL032-70BLED | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; CFI,parallel; 70ns; TFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Interface: CFI; parallel Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Memory: 32Mb FLASH NOR Kind of package: in-tray; tube Operating voltage: 2.7...3.6V |
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| IS29GL032-70BLED-TR | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; CFI,parallel; 70ns; TFBGA48; parallel; reel,tape Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Interface: CFI; parallel Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Memory: 32Mb FLASH NOR Kind of package: reel; tape Operating voltage: 2.7...3.6V |
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| IS29GL032-70TLED | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Interface: CFI; parallel Operating temperature: -40...105°C Kind of interface: parallel Memory: 32Mb FLASH Operating voltage: 2.7...3.6V Kind of memory: NOR Flash Access time: 70ns Kind of package: in-tray; tube |
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IS25LP064D-JBLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25WP128-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 8x6mm Operating voltage: 1.65...1.95V |
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| IS61NLP51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM |
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| IS61VPS51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 2.5V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM |
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| IS61VPS51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 2.5V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM |
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| IS61LPS102436B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 1Mx36bit Access time: 3.1ns Kind of interface: parallel Memory: 36Mb SRAM |
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| IS61NLP102436B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 1Mx36bit Access time: 3.1ns Kind of interface: parallel Memory: 36Mb SRAM |
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IS61NLP102436B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TQFP100; parallel Type of integrated circuit: SRAM memory Case: TQFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 1Mx36bit Access time: 3.1ns Kind of interface: parallel Memory: 36Mb SRAM |
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IS61NLP6432A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 3.1ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 64kx32bit Access time: 3.1ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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IS61NLF12836A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
товар відсутній |
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IS61NLF51218A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Operating voltage: 3.3V |
товар відсутній |
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| IS61NLF51218B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel; 9MbSRAM Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of interface: parallel Memory organisation: 512kx18bit Operating voltage: 3.3V Kind of memory: SRAM Access time: 7.5ns |
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| IS61NLP102418B-250B3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61NLP25618A-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165 Operating temperature: -40...85°C Case: PBGA165 Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 256kx18bit Operating voltage: 3.3V Kind of memory: SRAM Mounting: SMD Access time: 3.1ns |
товар відсутній |
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IS61NLP25618A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100 Operating temperature: -40...85°C Case: TQFP100 Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 256kx18bit Operating voltage: 3.3V Kind of memory: SRAM Mounting: SMD Access time: 3.1ns |
товар відсутній |
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| IS61NLP25636A-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165 Type of integrated circuit: SRAM memory Case: PBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 200ns Kind of interface: parallel Memory: 9Mb SRAM Operating voltage: 3.3V |
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| IS34ML02G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Interface: parallel 8bit Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Kind of memory: NAND Flash Kind of package: in-tray; tube |
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| IS34ML02G081-TLI-TR | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Interface: parallel 8bit Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Kind of memory: NAND Flash Kind of package: reel; tape |
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| IS34ML02G084-TLI-TR | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Interface: parallel 8bit Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Kind of memory: NAND Flash Kind of package: reel; tape |
товар відсутній |
| IS61WV25616BLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV3216DBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS25WP016D-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.2 грн |
| 10+ | 79.49 грн |
| 14+ | 63.89 грн |
| 38+ | 60.17 грн |
| IS25WP032D-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32Mb; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 32Mb
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32Mb; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 32Mb
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
товар відсутній
| IS25LP064D-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25WP064D-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64Mb; DTR,QPI,SPI; 166MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 64Mb
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64Mb; DTR,QPI,SPI; 166MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 64Mb
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.65...1.95V
товар відсутній
| IS25LP064D-JKLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP080D-JKLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8Mb; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 8Mb
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8Mb; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 8Mb
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25WP032D-JKLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32Mb; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 32Mb
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32Mb; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 32Mb
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
товар відсутній
| IS25WP064D-JKLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64Mb; DTR,QPI,SPI; 166MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 64Mb
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64Mb; DTR,QPI,SPI; 166MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory capacity: 64Mb
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
товар відсутній
| IS61C5128AL-10KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 456 грн |
| 3+ | 405.6 грн |
| 6+ | 386.29 грн |
| 10+ | 371.43 грн |
| IS61C5128AL-10KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61C5128AS-25QLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 692.8 грн |
| 2+ | 572 грн |
| 5+ | 540.8 грн |
| 25+ | 520.74 грн |
| IS61C5128AS-25TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61C5128AS-25HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS25LP020E-JYLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP064A-JBLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP064A-JKLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP064A-JLLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP064A-JMLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP064D-JBLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS63WV1024BLL-12HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kx16bit; 3.3V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kx16bit; 3.3V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
товар відсутній
| IS63WV1024BLL-12HLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; STSOP32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; STSOP32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
товар відсутній
| IS63WV1024BLL-12JLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; SOJ32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; SOJ32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
товар відсутній
| IS63WV1024BLL-12TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
товар відсутній
| IS63WV1024BLL-12BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; TFBGA48; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 3.3V; 12ns; TFBGA48; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61WV5128EDBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV5128EDBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV5128EDBLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV5128EDBLL-10CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS61C5128AS-25QLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61C5128AS-25TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 25ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS62C5128BL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
товар відсутній
| IS65C256AL-25ULA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 5V
товар відсутній
| IS65C256AL-25ULA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5V
товар відсутній
| IS62LV256AL-45ULI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.4 грн |
| 5+ | 134.46 грн |
| 9+ | 98.8 грн |
| 24+ | 93.6 грн |
| IS61LV256AL-10JLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel
Case: SOP28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel
Case: SOP28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
товар відсутній
| IS62LV256AL-45ULI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP28
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP28
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
товар відсутній
| IS29GL032-70BLED |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; CFI,parallel; 70ns; TFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Interface: CFI; parallel
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Memory: 32Mb FLASH NOR
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; CFI,parallel; 70ns; TFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Interface: CFI; parallel
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Memory: 32Mb FLASH NOR
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
| IS29GL032-70BLED-TR |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; CFI,parallel; 70ns; TFBGA48; parallel; reel,tape
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Interface: CFI; parallel
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Memory: 32Mb FLASH NOR
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; CFI,parallel; 70ns; TFBGA48; parallel; reel,tape
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Interface: CFI; parallel
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Memory: 32Mb FLASH NOR
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
| IS29GL032-70TLED |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Interface: CFI; parallel
Operating temperature: -40...105°C
Kind of interface: parallel
Memory: 32Mb FLASH
Operating voltage: 2.7...3.6V
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Interface: CFI; parallel
Operating temperature: -40...105°C
Kind of interface: parallel
Memory: 32Mb FLASH
Operating voltage: 2.7...3.6V
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray; tube
товар відсутній
| IS25LP064D-JBLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25WP128-JLLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 8x6mm
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 8x6mm
Operating voltage: 1.65...1.95V
товар відсутній
| IS61NLP51236B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
| IS61VPS51236B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
| IS61VPS51236B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
товар відсутній
| IS61LPS102436B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
товар відсутній
| IS61NLP102436B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
товар відсутній
| IS61NLP102436B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
товар відсутній
| IS61NLP6432A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 64kx32bit
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 64kx32bit
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61NLF12836A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61NLF51218A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
товар відсутній
| IS61NLF51218B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel; 9MbSRAM
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel; 9MbSRAM
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Access time: 7.5ns
товар відсутній
| IS61NLP102418B-250B3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61NLP25618A-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165
Operating temperature: -40...85°C
Case: PBGA165
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165
Operating temperature: -40...85°C
Case: PBGA165
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
товар відсутній
| IS61NLP25618A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Operating temperature: -40...85°C
Case: TQFP100
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Operating temperature: -40...85°C
Case: TQFP100
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
товар відсутній
| IS61NLP25636A-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
товар відсутній
| IS34ML02G081-TLI |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Interface: parallel 8bit
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Kind of memory: NAND Flash
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Interface: parallel 8bit
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Kind of memory: NAND Flash
Kind of package: in-tray; tube
товар відсутній
| IS34ML02G081-TLI-TR |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Interface: parallel 8bit
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Kind of memory: NAND Flash
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Interface: parallel 8bit
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Kind of memory: NAND Flash
Kind of package: reel; tape
товар відсутній
| IS34ML02G084-TLI-TR |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Interface: parallel 8bit
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Kind of memory: NAND Flash
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Interface: parallel 8bit
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Kind of memory: NAND Flash
Kind of package: reel; tape
товар відсутній