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IS62WV10248DBLL-55TLI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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| IS62WV10248EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.2...3.6V |
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| IS62WV10248EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.2...3.6V |
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IS62WV12816BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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IS62WV12816BLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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| IS62WV12816BLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
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| IS62WV12816EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.2...3.6V |
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| IS62WV20488BLL-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 25ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2048x8bit Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS62WV25616EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II; parallel Case: TSOP44 II Operating temperature: -40...85°C Mounting: SMD Kind of memory: SRAM Kind of interface: parallel Memory capacity: 4Mb Operating voltage: 2.2...3.6V Type of integrated circuit: SRAM memory Memory organisation: 256kx16bit Access time: 45ns |
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| IS62WV25616EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II; parallel Case: TSOP44 II Operating temperature: -40...85°C Mounting: SMD Kind of memory: SRAM Kind of interface: parallel Memory capacity: 4Mb Operating voltage: 2.2...3.6V Type of integrated circuit: SRAM memory Memory organisation: 256kx16bit Access time: 45ns |
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| IS62WV51216BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
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| IS62WV51216EALL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2.2V |
товар відсутній |
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| IS62WV51216EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.2...3.6V |
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| IS62WV51216EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.2...3.6V |
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IS62WV5128BLL-55T2LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 55ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
на замовлення 114 шт: термін постачання 21-30 дні (днів) |
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| IS62WV5128BLL-55T2LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 55ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
товар відсутній |
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IS62WV2568BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Access time: 55ns |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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IS62WV6416BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
на замовлення 133 шт: термін постачання 21-30 дні (днів) |
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| IS62WV1288BLL-55QLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
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IS62WV2568BLL-55HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Access time: 55ns |
на замовлення 178 шт: термін постачання 21-30 дні (днів) |
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IS62WVS0648FBLL-20NLI | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; 2.2÷3.6V; SO8; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 64kx8bit Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 2.2...3.6V Kind of package: in-tray; tube |
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IS62WVS1288FBLL-20NLI | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 2.2...3.6V Kind of package: in-tray; tube |
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| IS62WV6416BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: MBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V |
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| IS62WV10248BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V |
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| IS62WV1288FBLL-45HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV2568BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Access time: 55ns |
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| IS62WV2568BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Kind of package: in-tray; tube Access time: 55ns |
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| IS62WV2568EBLL-45HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.2...3.6V Kind of package: in-tray; tube Access time: 45ns |
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| IS62WV51216ALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
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| IS62WV51216BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V |
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| IS62WV5128EBLL-45QLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 45ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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IS62WVS0648FBLL-20NLI-TR | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; 2.2÷3.6V; SO8; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 64kx8bit Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 2.2...3.6V Kind of package: reel; tape |
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IS62WVS1288FBLL-20NLI-TR | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 2.2...3.6V Kind of package: reel; tape |
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IS62WVS2568FBLL-20NLI-TR | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 2.2...3.6V Kind of package: reel; tape |
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| IS62WV10248EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV12816BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V |
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| IS62WV1288BLL-55QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 55ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
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| IS62WV1288FBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV25616BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V |
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| IS62WV25616EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
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| IS62WV25616EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV2568BLL-55HLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Kind of package: reel; tape Access time: 55ns |
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| IS62WV2568EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.2...3.6V Kind of package: in-tray; tube Access time: 45ns |
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| IS62WV2568EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.2...3.6V Kind of package: in-tray; tube Access time: 45ns |
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| IS62WV51216EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
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| IS62WV51216EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV5128EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 45ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV6416BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: MBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V |
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| IS62WV102416ALL-35MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 35ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
товар відсутній |
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| IS62WV102416ALL-35TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 35ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
товар відсутній |
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| IS62WV102416BLL-25MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
товар відсутній |
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| IS62WV102416BLL-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
товар відсутній |
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| IS62WV102416EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷1.98V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...1.98V |
товар відсутній |
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| IS62WV102416EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
товар відсутній |
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| IS62WV102416EBLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
товар відсутній |
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| IS62WV102416FBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Memory capacity: 16Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
товар відсутній |
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| IS62WV10248BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V |
товар відсутній |
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| IS62WV12816BLL-55B2LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V |
товар відсутній |
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| IS62WV12816EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
товар відсутній |
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| IS62WV1288BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 55ns Case: TSOP32 Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
товар відсутній |
| IS62WV10248DBLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV10248EBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV10248EBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV12816BLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.8 грн |
| 5+ | 183.49 грн |
| 13+ | 173.83 грн |
| 25+ | 167.14 грн |
| IS62WV12816BLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.4 грн |
| 5+ | 193.89 грн |
| 13+ | 183.49 грн |
| 25+ | 176.06 грн |
| IS62WV12816BLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV12816EBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV20488BLL-25TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 25ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 25ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV25616EBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II; parallel
Case: TSOP44 II
Operating temperature: -40...85°C
Mounting: SMD
Kind of memory: SRAM
Kind of interface: parallel
Memory capacity: 4Mb
Operating voltage: 2.2...3.6V
Type of integrated circuit: SRAM memory
Memory organisation: 256kx16bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II; parallel
Case: TSOP44 II
Operating temperature: -40...85°C
Mounting: SMD
Kind of memory: SRAM
Kind of interface: parallel
Memory capacity: 4Mb
Operating voltage: 2.2...3.6V
Type of integrated circuit: SRAM memory
Memory organisation: 256kx16bit
Access time: 45ns
товар відсутній
| IS62WV25616EBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II; parallel
Case: TSOP44 II
Operating temperature: -40...85°C
Mounting: SMD
Kind of memory: SRAM
Kind of interface: parallel
Memory capacity: 4Mb
Operating voltage: 2.2...3.6V
Type of integrated circuit: SRAM memory
Memory organisation: 256kx16bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II; parallel
Case: TSOP44 II
Operating temperature: -40...85°C
Mounting: SMD
Kind of memory: SRAM
Kind of interface: parallel
Memory capacity: 4Mb
Operating voltage: 2.2...3.6V
Type of integrated circuit: SRAM memory
Memory organisation: 256kx16bit
Access time: 45ns
товар відсутній
| IS62WV51216BLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV51216EALL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV51216EBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV51216EBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV5128BLL-55T2LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
на замовлення 114 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.8 грн |
| 3+ | 377.37 грн |
| 7+ | 356.57 грн |
| 25+ | 343.2 грн |
| IS62WV5128BLL-55T2LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV2568BLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Access time: 55ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.8 грн |
| 5+ | 182.74 грн |
| 13+ | 173.09 грн |
| 25+ | 166.4 грн |
| IS62WV6416BLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
на замовлення 133 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.6 грн |
| 5+ | 188.69 грн |
| 13+ | 178.29 грн |
| IS62WV1288BLL-55QLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV2568BLL-55HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Access time: 55ns
на замовлення 178 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 198.4 грн |
| 5+ | 176.3 грн |
| 14+ | 166.69 грн |
| 25+ | 160.46 грн |
| IS62WVS0648FBLL-20NLI |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 64kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 64kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
товар відсутній
| IS62WVS1288FBLL-20NLI |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
товар відсутній
| IS62WV6416BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: MBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: MBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV10248BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV1288FBLL-45HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV2568BLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Access time: 55ns
товар відсутній
| IS62WV2568BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 55ns
товар відсутній
| IS62WV2568EBLL-45HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
Access time: 45ns
товар відсутній
| IS62WV51216ALL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV51216BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV5128EBLL-45QLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WVS0648FBLL-20NLI-TR |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 64kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: reel; tape
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 64kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: reel; tape
товар відсутній
| IS62WVS1288FBLL-20NLI-TR |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: reel; tape
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: reel; tape
товар відсутній
| IS62WVS2568FBLL-20NLI-TR |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: reel; tape
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 2.2...3.6V
Kind of package: reel; tape
товар відсутній
| IS62WV10248EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV12816BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV1288BLL-55QLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV1288FBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV25616BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV25616EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV25616EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV2568BLL-55HLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 55ns
товар відсутній
| IS62WV2568EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
Access time: 45ns
товар відсутній
| IS62WV2568EBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.2...3.6V
Kind of package: in-tray; tube
Access time: 45ns
товар відсутній
| IS62WV51216EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV51216EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV5128EBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV6416BLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: MBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: MBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV102416ALL-35MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 35ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 35ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV102416ALL-35TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 35ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 35ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV102416BLL-25MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV102416BLL-25TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV102416EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷1.98V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...1.98V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷1.98V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...1.98V
товар відсутній
| IS62WV102416EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV102416EBLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV102416FBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV10248BLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV12816BLL-55B2LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV12816EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV1288BLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
товар відсутній