Технічний опис IS61LPS51236B-200B3LI ISSI
Description: IC SRAM 18MBIT PARALLEL 165TFBGA, Packaging: Tray, Package / Case: 165-TBGA, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 165-TFBGA (13x15), Memory Interface: Parallel, Access Time: 3 ns, Memory Organization: 512K x 36, DigiKey Programmable: Not Verified.
Інші пропозиції IS61LPS51236B-200B3LI
| Фото | Назва | Виробник | Інформація |
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| IS61LPS51236B-200B3LI | Виробник : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 144 шт |
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IS61LPS51236B-200B3LI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 18MBIT PARALLEL 165TFBGA Packaging: Tray Package / Case: 165-TBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-TFBGA (13x15) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
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IS61LPS51236B-200B3LI | Виробник : ISSI |
SRAM 18Mb,Pipeline,Sync,512K x 36,200MHz,3.3v or 2.5v I/O, 165 Ball BGA, Lead Free |
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| IS61LPS51236B-200B3LI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM |
товар відсутній |