Технічний опис IS42VM32200M-75BLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90, Supply voltage: 1.7...1.95V DC, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel; tape, Kind of interface: parallel, Memory: 64Mb DRAM, Case: TFBGA90, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 512kx32bitx4, Access time: 7.5ns, Clock frequency: 133MHz, кількість в упаковці: 2500 шт.
Інші пропозиції IS42VM32200M-75BLI-TR
| Фото | Назва | Виробник | Інформація |
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| IS42VM32200M-75BLI-TR | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 64Mb DRAM Case: TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Access time: 7.5ns Clock frequency: 133MHz кількість в упаковці: 2500 шт |
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%20Renders/90-BGA%2013x8.jpg "IS42VM32200M-75BLI-TR") |
IS42VM32200M-75BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SDRAM 64MBIT 90BGA |
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| IS42VM32200M-75BLI-TR | Виробник : ISSI |
DRAM 64M, 1.8V, Mobile SDRAM, 2Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R |
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| IS42VM32200M-75BLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 64Mb DRAM Case: TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Access time: 7.5ns Clock frequency: 133MHz |
товар відсутній |