Технічний опис IS42VM16800H-6BLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54, Type of integrated circuit: DRAM memory, Case: TFBGA54, Mounting: SMD, Operating temperature: -40...85°C, Supply voltage: 1.7...1.95V DC, Kind of package: in-tray; tube, Kind of interface: parallel, Memory: 128Mb DRAM, Kind of memory: SDRAM, Memory organisation: 2Mx16bitx4, Access time: 6ns, Clock frequency: 166MHz, кількість в упаковці: 348 шт.
Інші пропозиції IS42VM16800H-6BLI
| Фото | Назва | Виробник | Інформація |
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| IS42VM16800H-6BLI | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Kind of interface: parallel Memory: 128Mb DRAM Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz кількість в упаковці: 348 шт |
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%20Renders/54-BGA%208x8.jpg "IS42VM16800H-6BLI") |
IS42VM16800H-6BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SDRAM 128MBIT 54BGA |
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IS42VM16800H-6BLI | Виробник : ISSI |
DRAM 128M, 1.8V, M-SDRAM 8Mx16, 166Mhz, RoHS |
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| IS42VM16800H-6BLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Kind of interface: parallel Memory: 128Mb DRAM Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz |
товар відсутній |