Технічний опис IS43DR16160B-3DBLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84, Type of integrated circuit: DRAM memory, Kind of memory: DDR2; SDRAM, Memory: 256Mb DRAM, Memory organisation: 4Mx16bitx4, Clock frequency: 333MHz, Access time: 15ns, Case: TWBGA84, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 1.7...1.9V DC, кількість в упаковці: 2500 шт.
Інші пропозиції IS43DR16160B-3DBLI-TR
| Фото | Назва | Виробник | Інформація |
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| IS43DR16160B-3DBLI-TR | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC кількість в упаковці: 2500 шт |
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IS43DR16160B-3DBLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DDR2 256M 333MHZ 84BGA |
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IS43DR16160B-3DBLI-TR | Виробник : ISSI |
DRAM 256Mb, 1.8V, 333MHz 16M x 16 DDR2 |
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| IS43DR16160B-3DBLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
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