IS43DR81280C-3DBLI ISSI
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60
Supply voltage: 1.7...1.9V DC
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Memory organisation: 16Mx8bitx8
Access time: 15ns
Clock frequency: 333MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60
Supply voltage: 1.7...1.9V DC
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Memory organisation: 16Mx8bitx8
Access time: 15ns
Clock frequency: 333MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
кількість в упаковці: 242 шт
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Технічний опис IS43DR81280C-3DBLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60, Supply voltage: 1.7...1.9V DC, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Memory organisation: 16Mx8bitx8, Access time: 15ns, Clock frequency: 333MHz, Kind of interface: parallel, Memory: 1Gb DRAM, Mounting: SMD, Case: TWBGA60, Type of integrated circuit: DRAM memory, Kind of memory: DDR2; SDRAM, кількість в упаковці: 242 шт.
Інші пропозиції IS43DR81280C-3DBLI
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IS43DR81280C-3DBLI | Виробник : ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 1GBIT PARALLEL 60TWBGA |
товар відсутній |
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IS43DR81280C-3DBLI | Виробник : ISSI | DRAM DDR2,1G,1.8V, RoHs 333MHz,128Mx8, IT |
товар відсутній |
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IS43DR81280C-3DBLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 333MHz; 15ns; TWBGA60 Supply voltage: 1.7...1.9V DC Operating temperature: -40...85°C Kind of package: in-tray; tube Memory organisation: 16Mx8bitx8 Access time: 15ns Clock frequency: 333MHz Kind of interface: parallel Memory: 1Gb DRAM Mounting: SMD Case: TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM |
товар відсутній |