IS42VM32160E-6BLI-TR ISSI
Виробник: ISSICategory: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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Технічний опис IS42VM32160E-6BLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 4Mx32bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA90, Memory capacity: 512Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 1.7...1.95V DC.
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IS42VM32160E-6BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SDRAM 512M 166MHZ 90BGA |
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| IS42VM32160E-6BLI-TR | Виробник : ISSI |
DRAM 512M, 1.8V, 166Mhz 16Mx32 Mobile SDRAM |
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| IS42VM32160E-6BLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товар відсутній |