IS42VM32160E-6BLI ISSI
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Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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Технічний опис IS42VM32160E-6BLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 4Mx32bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA90, Memory capacity: 512Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 1.7...1.95V DC.
Інші пропозиції IS42VM32160E-6BLI
Фото | Назва | Виробник | Інформація |
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IS42VM32160E-6BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
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товар відсутній |
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IS42VM32160E-6BLI | Виробник : ISSI |
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товар відсутній |
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IS42VM32160E-6BLI | Виробник : ISSI |
![]() Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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