IS43DR16640C-3DBLI-TR ISSI
Виробник: ISSICategory: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Access time: 15ns
Clock frequency: 333MHz
Kind of interface: parallel
Memory: 1Gb DRAM
кількість в упаковці: 2500 шт
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Технічний опис IS43DR16640C-3DBLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 333MHz; 15ns; TWBGA84, Type of integrated circuit: DRAM memory, Mounting: SMD, Case: TWBGA84, Supply voltage: 1.7...1.9V DC, Operating temperature: -40...85°C, Kind of package: reel; tape, Kind of memory: DDR2; SDRAM, Memory organisation: 8Mx16bitx8, Access time: 15ns, Clock frequency: 333MHz, Kind of interface: parallel, Memory: 1Gb DRAM, кількість в упаковці: 2500 шт.
Інші пропозиції IS43DR16640C-3DBLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IS43DR16640C-3DBLI-TR | Виробник : ISSI |
DRAM DDR2,1G,1.8V, RoHs 333MHz,64Mx16, IT |
товар відсутній |
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| IS43DR16640C-3DBLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Access time: 15ns Clock frequency: 333MHz Kind of interface: parallel Memory: 1Gb DRAM |
товар відсутній |