Технічний опис IS43DR16320E-25DBLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84, Type of integrated circuit: DRAM memory, Clock frequency: 400MHz, Mounting: SMD, Case: TWBGA84, Supply voltage: 1.7...1.9V DC, Memory: 512Mb DRAM, Operating temperature: -40...85°C, Kind of package: reel; tape, Access time: 12.5ns, Memory organisation: 8Mx16bitx4, Kind of memory: DDR2; SDRAM, Kind of interface: parallel, кількість в упаковці: 2500 шт.
Інші пропозиції IS43DR16320E-25DBLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IS43DR16320E-25DBLI-TR | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 512Mb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 8Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel кількість в упаковці: 2500 шт |
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| IS43DR16320E-25DBLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512M PARALLEL 84TWBGA |
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IS43DR16320E-25DBLI-TR | Виробник : ISSI |
DRAM 512M, 1.8V, DDR2, 32Mx16, 400Mhz a. CL5, 84 ball BGA (8mmx12.5mm) RoHS, IT, T&R |
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| IS43DR16320E-25DBLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 512Mb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 8Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |