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IRF40R207 IRF40R207 INFINEON TECHNOLOGIES IRF40R207.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhanced
товару немає в наявності
XMC4400F100K512ABXQSA1 XMC4400F100K512ABXQSA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 80kB SRAM; 512kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4400
товару немає в наявності
SPW55N80C3FKSA1 INFINEON TECHNOLOGIES Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES IR2132JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+523.87 грн
3+ 337.11 грн
8+ 319.37 грн
IR2132STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
товару немає в наявності
IPB64N25S320ATMA1 INFINEON TECHNOLOGIES Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 256A
Case: PG-TO263-3-2
Drain-source voltage: 250V
Drain current: 46A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
товару немає в наявності
IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES irfr5505.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 3894 шт:
термін постачання 21-30 дні (днів)
6+69.27 грн
41+ 21 грн
113+ 19.81 грн
Мінімальне замовлення: 6
IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES irlr9343pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
IR2136SPBF IR2136SPBF INFINEON TECHNOLOGIES IR2136STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -350...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+644.88 грн
3+ 414.74 грн
6+ 392.56 грн
IR2136STRPBF IR2136STRPBF INFINEON TECHNOLOGIES IR2136STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -350...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
товару немає в наявності
2N7002H6327XTSA2 2N7002H6327XTSA2 INFINEON TECHNOLOGIES 2N7002H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 10684 шт:
термін постачання 21-30 дні (днів)
25+15.92 грн
40+ 9.39 грн
56+ 6.62 грн
100+ 5.71 грн
243+ 3.53 грн
666+ 3.34 грн
Мінімальне замовлення: 25
AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES AUIRGP35B60PD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
товару немає в наявності
IRL3803PBF IRL3803PBF INFINEON TECHNOLOGIES irl3803.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
3+162.42 грн
Мінімальне замовлення: 3
IRF7328TRPBF IRF7328TRPBF INFINEON TECHNOLOGIES irf7328pbf.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF1405PBF IRF1405PBF INFINEON TECHNOLOGIES irf1405.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 635 шт:
термін постачання 21-30 дні (днів)
4+117.83 грн
10+ 79.84 грн
15+ 58.4 грн
41+ 55.45 грн
Мінімальне замовлення: 4
IRF1405STRLPBF IRF1405STRLPBF INFINEON TECHNOLOGIES irf1405spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF1405ZPBF IRF1405ZPBF INFINEON TECHNOLOGIES irf1405zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 165 шт:
термін постачання 21-30 дні (днів)
3+193.47 грн
9+ 98.32 грн
25+ 93.15 грн
Мінімальне замовлення: 3
IRS44273LTRPBF IRS44273LTRPBF INFINEON TECHNOLOGIES IRS44273LTRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -1.5...1.5A
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 50ns
на замовлення 2994 шт:
термін постачання 21-30 дні (днів)
8+46.43 грн
25+ 35.34 грн
67+ 33.42 грн
Мінімальне замовлення: 8
IRS21814SPBF IRS21814SPBF INFINEON TECHNOLOGIES irs2181.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
товару немає в наявності
IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
2+281.04 грн
3+ 231.4 грн
5+ 211.44 грн
10+ 201.09 грн
12+ 199.61 грн
25+ 192.21 грн
Мінімальне замовлення: 2
IRS21064SPBF IRS21064SPBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
товару немає в наявності
IRS2106PBF IRS2106PBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
товару немає в наявності
IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
товару немає в наявності
IRF7456TRPBF IRF7456TRPBF INFINEON TECHNOLOGIES irf7456pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Case: SO8
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
товару немає в наявності
IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES IRFB4115.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 565 шт:
термін постачання 21-30 дні (днів)
2+242.83 грн
6+ 151.55 грн
16+ 143.42 грн
500+ 142.68 грн
Мінімальне замовлення: 2
BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
на замовлення 5975 шт:
термін постачання 21-30 дні (днів)
36+11.31 грн
85+ 4.38 грн
105+ 3.54 грн
284+ 3.05 грн
780+ 2.88 грн
1000+ 2.85 грн
3000+ 2.77 грн
Мінімальне замовлення: 36
SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES SPW47N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 109 шт:
термін постачання 21-30 дні (днів)
1+1171.94 грн
2+ 788.08 грн
4+ 745.2 грн
SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES SPW47N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
TLE7259-3GE TLE7259-3GE INFINEON TECHNOLOGIES TLE7259-3.pdf Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...27V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
DC supply current: 5mA
товару немає в наявності
IRFR024NTRPBF IRFR024NTRPBF INFINEON TECHNOLOGIES irfr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel
Power dissipation: 38W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 55V
Drain current: 16A
Type of transistor: N-MOSFET
на замовлення 11262 шт:
термін постачання 21-30 дні (днів)
7+65.28 грн
9+ 41.84 грн
25+ 38 грн
30+ 29.28 грн
81+ 27.72 грн
1000+ 27.13 грн
2000+ 26.61 грн
Мінімальне замовлення: 7
AUIRFR024N AUIRFR024N INFINEON TECHNOLOGIES auirfr024n.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
товару немає в наявності
IRF1018ESTRLPBF IRF1018ESTRLPBF INFINEON TECHNOLOGIES irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 527 шт:
термін постачання 21-30 дні (днів)
4+99.52 грн
10+ 74.52 грн
20+ 43.84 грн
55+ 41.47 грн
Мінімальне замовлення: 4
IRF6775MTRPBF IRF6775MTRPBF INFINEON TECHNOLOGIES irf6775mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Drain-source voltage: 150V
Drain current: 28A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
товару немає в наявності
IR2301PBF IR2301PBF INFINEON TECHNOLOGIES IR2301-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Supply voltage: 5...20V DC
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Output current: -350...200mA
Power: 1W
Turn-off time: 200ns
Turn-on time: 220ns
товару немає в наявності
IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES IR2301-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 5...20V DC
Kind of package: tube
Number of channels: 2
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Output current: -350...200mA
Power: 625mW
Turn-off time: 200ns
Turn-on time: 220ns
товару немає в наявності
IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES ir2304.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Output current: -130...60mA
Power: 625mW
Turn-off time: 0.22µs
Turn-on time: 220ns
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
4+112.26 грн
5+ 93.89 грн
12+ 75.41 грн
32+ 70.97 грн
Мінімальне замовлення: 4
IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES ir2308.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Output current: -350...200mA
Power: 625mW
Turn-off time: 200ns
Turn-on time: 220ns
товару немає в наявності
IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES irf8010.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 335 шт:
термін постачання 21-30 дні (днів)
4+105.09 грн
10+ 66.54 грн
17+ 52.49 грн
46+ 49.53 грн
Мінімальне замовлення: 4
IRF8010STRLPBF IRF8010STRLPBF INFINEON TECHNOLOGIES irf8010spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF8113TRPBF IRF8113TRPBF INFINEON TECHNOLOGIES irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IRF8313TRPBF IRF8313TRPBF INFINEON TECHNOLOGIES irf8313pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.7A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF8707TRPBF IRF8707TRPBF INFINEON TECHNOLOGIES irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товару немає в наявності
IPB019N08N3G
+1
 		IPB019N08N3G INFINEON TECHNOLOGIES IPB019N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товару немає в наявності
IRFS7430TRL7PP IRFS7430TRL7PP INFINEON TECHNOLOGIES IRFS7430TRL7PP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 240A
On-state resistance: 0.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 305nC
товару немає в наявності
IRFH8311TRPBF IRFH8311TRPBF INFINEON TECHNOLOGIES IRFH8311TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRFS7440TRLPBF IRFS7440TRLPBF INFINEON TECHNOLOGIES IRFS7440TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES IRLS3034TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
AUIRLS3034 INFINEON TECHNOLOGIES AUIRLS3034.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
товару немає в наявності
BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES BSC030P03NS3GAUMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 3145 шт:
термін постачання 21-30 дні (днів)
3+159.69 грн
10+ 142.68 грн
11+ 82.06 грн
29+ 77.62 грн
Мінімальне замовлення: 3
IFCM20T65GDXKMA1 IFCM20T65GDXKMA1 INFINEON TECHNOLOGIES IFCM20T65GD.pdf Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Case: PG-MDIP24
Output current: 20A
Integrated circuit features: interleaved PFC
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V
Frequency: 60kHz
Kind of package: tube
Voltage class: 650V
Power dissipation: 52.3W
товару немає в наявності
IGCM04F60GAXKMA1 IGCM04F60GAXKMA1 INFINEON TECHNOLOGIES IGCM04F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
на замовлення 246 шт:
термін постачання 21-30 дні (днів)
1+808.89 грн
2+ 572.95 грн
3+ 572.21 грн
5+ 541.16 грн
IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES IKCM10H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+688.67 грн
2+ 490.15 грн
3+ 489.41 грн
5+ 462.79 грн
IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES IKCM15H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+793.77 грн
2+ 558.16 грн
5+ 527.85 грн
IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES IKCM30F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+1447.41 грн
2+ 1270.83 грн
IRFH9310TRPBF IRFH9310TRPBF INFINEON TECHNOLOGIES irfh9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 3495 шт:
термін постачання 21-30 дні (днів)
4+99.52 грн
10+ 78.36 грн
15+ 60.62 грн
40+ 57.66 грн
250+ 55.45 грн
Мінімальне замовлення: 4
IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES irf9317pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES ICE2PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
на замовлення 863 шт:
термін постачання 21-30 дні (днів)
5+82.06 грн
13+ 68.75 грн
35+ 64.32 грн
500+ 62.1 грн
Мінімальне замовлення: 5
ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
товару немає в наявності
IPB035N08N3GATMA1 IPB035N08N3GATMA1 INFINEON TECHNOLOGIES IPB035N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.5mΩ
товару немає в наявності
IRF40R207 IRF40R207.pdf
IRF40R207
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhanced
товару немає в наявності
XMC4400F100K512ABXQSA1 XMC4400-DTE.pdf
XMC4400F100K512ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 80kB SRAM; 512kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4400
товару немає в наявності
SPW55N80C3FKSA1 Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
IR2132SPBF description IR2132JPBF.pdf
IR2132SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+523.87 грн
3+ 337.11 грн
8+ 319.37 грн
IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
товару немає в наявності
IPB64N25S320ATMA1 Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 256A
Case: PG-TO263-3-2
Drain-source voltage: 250V
Drain current: 46A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
товару немає в наявності
IRFR5505TRPBF description irfr5505.pdf
IRFR5505TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 3894 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+69.27 грн
41+ 21 грн
113+ 19.81 грн
Мінімальне замовлення: 6
IRLR9343TRPBF irlr9343pbf.pdf
IRLR9343TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
IR2136SPBF IR2136STRPBF.pdf
IR2136SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -350...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+644.88 грн
3+ 414.74 грн
6+ 392.56 грн
IR2136STRPBF IR2136STRPBF.pdf
IR2136STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -350...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
товару немає в наявності
2N7002H6327XTSA2 2N7002H6327XTSA2.pdf
2N7002H6327XTSA2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 10684 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
25+15.92 грн
40+ 9.39 грн
56+ 6.62 грн
100+ 5.71 грн
243+ 3.53 грн
666+ 3.34 грн
Мінімальне замовлення: 25
AUIRGP35B60PD AUIRGP35B60PD.pdf
AUIRGP35B60PD
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
товару немає в наявності
IRL3803PBF description irl3803.pdf
IRL3803PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+162.42 грн
Мінімальне замовлення: 3
IRF7328TRPBF irf7328pbf.pdf
IRF7328TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF1405PBF irf1405.pdf
IRF1405PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 635 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+117.83 грн
10+ 79.84 грн
15+ 58.4 грн
41+ 55.45 грн
Мінімальне замовлення: 4
IRF1405STRLPBF irf1405spbf.pdf
IRF1405STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF1405ZPBF irf1405zpbf.pdf
IRF1405ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 165 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+193.47 грн
9+ 98.32 грн
25+ 93.15 грн
Мінімальне замовлення: 3
IRS44273LTRPBF IRS44273LTRPBF.pdf
IRS44273LTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -1.5...1.5A
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 50ns
на замовлення 2994 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+46.43 грн
25+ 35.34 грн
67+ 33.42 грн
Мінімальне замовлення: 8
IRS21814SPBF description irs2181.pdf
IRS21814SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
товару немає в наявності
IRS21064PBF irs2106.pdf
IRS21064PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+281.04 грн
3+ 231.4 грн
5+ 211.44 грн
10+ 201.09 грн
12+ 199.61 грн
25+ 192.21 грн
Мінімальне замовлення: 2
IRS21064SPBF irs2106.pdf
IRS21064SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
товару немає в наявності
IRS2106PBF irs2106.pdf
IRS2106PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
товару немає в наявності
IRS2106SPBF irs2106.pdf
IRS2106SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
товару немає в наявності
IRF7456TRPBF irf7456pbf.pdf
IRF7456TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Case: SO8
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
товару немає в наявності
IRFB4115PBF IRFB4115.pdf
IRFB4115PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 565 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+242.83 грн
6+ 151.55 грн
16+ 143.42 грн
500+ 142.68 грн
Мінімальне замовлення: 2
BCV47E6327 BCV27E6327.pdf
BCV47E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
на замовлення 5975 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
36+11.31 грн
85+ 4.38 грн
105+ 3.54 грн
284+ 3.05 грн
780+ 2.88 грн
1000+ 2.85 грн
3000+ 2.77 грн
Мінімальне замовлення: 36
SPW47N60C3 SPW47N60C3.pdf
SPW47N60C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 109 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1171.94 грн
2+ 788.08 грн
4+ 745.2 грн
SPW47N60CFDFKSA1 SPW47N60CFD.pdf
SPW47N60CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
TLE7259-3GE TLE7259-3.pdf
TLE7259-3GE
Виробник: INFINEON TECHNOLOGIES
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...27V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
DC supply current: 5mA
товару немає в наявності
IRFR024NTRPBF description irfr024npbf.pdf
IRFR024NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel
Power dissipation: 38W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 55V
Drain current: 16A
Type of transistor: N-MOSFET
на замовлення 11262 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+65.28 грн
9+ 41.84 грн
25+ 38 грн
30+ 29.28 грн
81+ 27.72 грн
1000+ 27.13 грн
2000+ 26.61 грн
Мінімальне замовлення: 7
AUIRFR024N auirfr024n.pdf
AUIRFR024N
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IR2118SPBF description ir2117.pdf
IR2118SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
товару немає в наявності
IRF1018ESTRLPBF irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
IRF1018ESTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 527 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+99.52 грн
10+ 74.52 грн
20+ 43.84 грн
55+ 41.47 грн
Мінімальне замовлення: 4
IRF6775MTRPBF irf6775mpbf.pdf
IRF6775MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Drain-source voltage: 150V
Drain current: 28A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
товару немає в наявності
IR2301PBF IR2301-DTE.pdf
IR2301PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Supply voltage: 5...20V DC
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Output current: -350...200mA
Power: 1W
Turn-off time: 200ns
Turn-on time: 220ns
товару немає в наявності
IR2301SPBF IR2301-DTE.pdf
IR2301SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 5...20V DC
Kind of package: tube
Number of channels: 2
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Output current: -350...200mA
Power: 625mW
Turn-off time: 200ns
Turn-on time: 220ns
товару немає в наявності
IR2304SPBF ir2304.pdf
IR2304SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Output current: -130...60mA
Power: 625mW
Turn-off time: 0.22µs
Turn-on time: 220ns
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+112.26 грн
5+ 93.89 грн
12+ 75.41 грн
32+ 70.97 грн
Мінімальне замовлення: 4
IR2308SPBF ir2308.pdf
IR2308SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Output current: -350...200mA
Power: 625mW
Turn-off time: 200ns
Turn-on time: 220ns
товару немає в наявності
IRF8010PBF description irf8010.pdf
IRF8010PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 335 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+105.09 грн
10+ 66.54 грн
17+ 52.49 грн
46+ 49.53 грн
Мінімальне замовлення: 4
IRF8010STRLPBF irf8010spbf.pdf
IRF8010STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF8113TRPBF description irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50
IRF8113TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IRF8313TRPBF irf8313pbf.pdf
IRF8313TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.7A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF8707TRPBF irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товару немає в наявності
IPB019N08N3G IPB019N08N3G-DTE.pdf
IPB019N08N3G
+1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товару немає в наявності
IRFS7430TRL7PP IRFS7430TRL7PP.pdf
IRFS7430TRL7PP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 240A
On-state resistance: 0.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 305nC
товару немає в наявності
IRFH8311TRPBF IRFH8311TRPBF.pdf
IRFH8311TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRFS7440TRLPBF IRFS7440TRLPBF.pdf
IRFS7440TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IRLS3034TRLPBF IRLS3034TRLPBF.pdf
IRLS3034TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
AUIRLS3034 AUIRLS3034.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
товару немає в наявності
BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1-DTE.pdf
BSC030P03NS3GAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 3145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+159.69 грн
10+ 142.68 грн
11+ 82.06 грн
29+ 77.62 грн
Мінімальне замовлення: 3
IFCM20T65GDXKMA1 IFCM20T65GD.pdf
IFCM20T65GDXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Case: PG-MDIP24
Output current: 20A
Integrated circuit features: interleaved PFC
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V
Frequency: 60kHz
Kind of package: tube
Voltage class: 650V
Power dissipation: 52.3W
товару немає в наявності
IGCM04F60GAXKMA1 IGCM04F60GA.pdf
IGCM04F60GAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
на замовлення 246 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+808.89 грн
2+ 572.95 грн
3+ 572.21 грн
5+ 541.16 грн
IKCM10H60GAXKMA1 IKCM10H60GA.pdf
IKCM10H60GAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+688.67 грн
2+ 490.15 грн
3+ 489.41 грн
5+ 462.79 грн
IKCM15H60GAXKMA2 IKCM15H60GA.pdf
IKCM15H60GAXKMA2
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+793.77 грн
2+ 558.16 грн
5+ 527.85 грн
IKCM30F60GAXKMA1 IKCM30F60GA.pdf
IKCM30F60GAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1447.41 грн
2+ 1270.83 грн
IRFH9310TRPBF irfh9310pbf.pdf
IRFH9310TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 3495 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+99.52 грн
10+ 78.36 грн
15+ 60.62 грн
40+ 57.66 грн
250+ 55.45 грн
Мінімальне замовлення: 4
IRF9317TRPBF irf9317pbf.pdf
IRF9317TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
ICE2PCS01GXUMA1 ICE2PCS01G.pdf
ICE2PCS01GXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
на замовлення 863 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+82.06 грн
13+ 68.75 грн
35+ 64.32 грн
500+ 62.1 грн
Мінімальне замовлення: 5
ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
товару немає в наявності
IPB035N08N3GATMA1 IPB035N08N3G-DTE.pdf
IPB035N08N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.5mΩ
товару немає в наявності
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