Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139428) > Сторінка 2296 з 2324
Фото | Назва | Виробник | Інформація |
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BSS205NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 20V Drain current: 2.5A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W |
на замовлення 6173 шт: термін постачання 21-30 дні (днів) |
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BSS306NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 93mΩ Type of transistor: N-MOSFET Drain current: 2.3A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 30V |
на замовлення 7070 шт: термін постачання 21-30 дні (днів) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 5869 шт: термін постачання 21-30 дні (днів) |
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BSL214NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6 Mounting: SMD Case: TSOP6 Drain current: 1.5A Power dissipation: 0.5W Polarisation: unipolar Type of transistor: N-MOSFET x2 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 20V On-state resistance: 0.25Ω |
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BCR185WH6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SOT323 Frequency: 200MHz Collector-emitter voltage: 50V |
на замовлення 2330 шт: термін постачання 21-30 дні (днів) |
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IPB024N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET |
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IDW10G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3 Technology: CoolSiC™ 5G; SiC Power dissipation: 65W Case: PG-TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 1.8V Load current: 10A Leakage current: 2µA Type of diode: Schottky rectifying Max. forward impulse current: 46A |
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XC878CM16FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 26.7MHz Interface: CAN x2; SPI; UART Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 10 Memory: 64kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 2 Number of input capture channels: 2 |
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IRF135B203 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 135V Drain current: 91A Pulsed drain current: 512A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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IRF135S203 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 135V Drain current: 91A Pulsed drain current: 512A Power dissipation: 441W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 0.27µC Kind of channel: enhanced |
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SPP80P06PHXKSA1 | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Drain-source voltage: -60V Drain current: -80A On-state resistance: 23mΩ Type of transistor: P-MOSFET Power dissipation: 340W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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BSP77E6433 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V |
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IRS2186PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -4...4A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
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IRS2186STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
на замовлення 2390 шт: термін постачання 21-30 дні (днів) |
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TLS850D0TAV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 70mV Output voltage: 5V Output current: 0.5A Case: PG-TO263-7 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 3...40V |
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TLS850F0TAV33ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 80mV Output voltage: 3.3V Output current: 0.5A Case: PG-TO263-7 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 3...40V |
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TLS850F2TAV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.425V Output voltage: 5V Output current: 0.5A Case: PG-TO263-7 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 3...40V |
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IPZ65R095C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 24A On-state resistance: 95mΩ Type of transistor: N-MOSFET Power dissipation: 128W Polarisation: unipolar |
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IPP093N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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DD340N18S | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 330A Case: BG-PB50SB-1 Max. forward voltage: 1.31V Max. forward impulse current: 10kA Electrical mounting: screw Mechanical mounting: screw |
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BSC340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 4556 шт: термін постачання 21-30 дні (днів) |
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AIGW50N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Manufacturer series: H5 Turn-on time: 33ns Turn-off time: 184ns |
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IRFR3410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7946TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Power dissipation: 96W Case: DirectFET Mounting: SMD Kind of channel: enhanced |
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IRFR825TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 119W Case: DPAK Mounting: SMD Kind of channel: enhanced |
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IRF7580MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 116A Power dissipation: 115W Case: DirectFET Mounting: SMD Kind of channel: enhanced |
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IRFH7084TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Type of integrated circuit: RF switch Number of channels: 2 Mounting: SMD Case: TSNP6 Supply voltage: 1.8...3.5V DC Application: telecommunication Bandwidth: 0.1...6GHz Output configuration: SPDT |
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TLE4207GXUMA2 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: IMC; motor controller Case: PG-DSO-14 Output current: 0.8A Number of channels: 2 Integrated circuit features: fault detection Mounting: SMD Operating temperature: -40...150°C Operating voltage: 8...18V Kind of package: reel; tape |
на замовлення 2454 шт: термін постачання 21-30 дні (днів) |
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TLE42502GHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 2.5...36V Output current: 50mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 4...40V |
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TLE42642GHTSA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 5V Output current: 0.15A Case: PG-SOT223-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Input voltage: 5.5...45V |
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TLE4264GHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.16A Case: PG-SOT223-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 5.5...45V |
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TLE4266GHTMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.15A Case: PG-SOT223-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 5.5...45V |
на замовлення 4158 шт: термін постачання 21-30 дні (днів) |
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TLE4268GXUMA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.15A Case: PG-DSO-20 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 5.5...45V |
на замовлення 413 шт: термін постачання 21-30 дні (днів) |
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TLE4269GXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.1A Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 5.5...45V |
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TLE4291EXUMA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.45A Case: PG-SSOP-14-EP Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 3.3...42V |
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TLE42962GV33HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 3.3V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 4...45V |
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TLE42962GV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 5.5...45V |
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TLE4296GV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 5.5...45V |
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TLE42994EXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD Kind of package: reel; tape Input voltage: 4.4...45V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...150°C Case: PG-SSOP-14-EP Output voltage: 3.3V Output current: 0.15A Type of integrated circuit: voltage regulator |
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TLE7257SJXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8 Type of integrated circuit: interface Interface: LIN Supply voltage: 5.5...18V DC Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Case: PG-DSO-8 Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: transceiver DC supply current: 3mA |
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TLE7258DXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8 Type of integrated circuit: interface Interface: LIN Supply voltage: 5.5...18V DC Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Case: PG-TSON-8 Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: transceiver DC supply current: 3mA |
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TLE7268LCXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14 Operating temperature: -40...150°C Type of integrated circuit: interface Interface: LIN Kind of package: reel; tape Number of receivers: 2 Number of transmitters: 2 Kind of integrated circuit: transceiver Mounting: SMD Case: PG-TSON-14 Supply voltage: 5.5...40V DC |
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TLE7268SKXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14 Operating temperature: -40...150°C Type of integrated circuit: interface Interface: LIN Kind of package: reel; tape Number of receivers: 2 Number of transmitters: 2 Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-14 Supply voltage: 5.5...40V DC |
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 156W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 387 шт: термін постачання 21-30 дні (днів) |
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FP06R12W1T4B3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 12A Power dissipation: 94W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-1 |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IRLR7807ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 40W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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BSM25GD120DN2E3224BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 25A Power dissipation: 200W Case: ECONOPACK 2K Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Application: Inverter Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge Mechanical mounting: screw Type of module: IGBT |
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AIKB20N60CTATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 156W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
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IKQ120N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: PG-TO247-3-46 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 703nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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IKQ120N60TAXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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AIKQ120N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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IRFR3910TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPP037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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DD261N20K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V Max. off-state voltage: 2kV Max. forward voltage: 1.42V Load current: 261A Semiconductor structure: double series Max. forward impulse current: 9.5kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: BG-PB50-1 |
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TT122N22KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 122A Case: BG-PB34-1 Max. forward voltage: 1.95V Max. forward impulse current: 3.3kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IRFR3504ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 90W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPP80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IRF3805PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 220A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
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IPP50R190CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 500V Drain current: 18.5A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 127W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
BSS205NH6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 20V
Drain current: 2.5A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 20V
Drain current: 2.5A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
на замовлення 6173 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 29.05 грн |
20+ | 19.18 грн |
28+ | 13.43 грн |
50+ | 11.58 грн |
100+ | 10.05 грн |
213+ | 4.12 грн |
585+ | 3.9 грн |
BSS306NH6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Type of transistor: N-MOSFET
Drain current: 2.3A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Type of transistor: N-MOSFET
Drain current: 2.3A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 30V
на замовлення 7070 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 23.4 грн |
21+ | 18.43 грн |
50+ | 11.84 грн |
100+ | 10.34 грн |
171+ | 5.17 грн |
470+ | 4.87 грн |
BSS806NH6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 5869 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 30.66 грн |
19+ | 19.93 грн |
32+ | 11.76 грн |
100+ | 8.54 грн |
152+ | 5.77 грн |
419+ | 5.47 грн |
BSL214NH6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Drain current: 1.5A
Power dissipation: 0.5W
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
On-state resistance: 0.25Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Drain current: 1.5A
Power dissipation: 0.5W
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
On-state resistance: 0.25Ω
товар відсутній
BCR185WH6327 |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 200MHz
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 200MHz
Collector-emitter voltage: 50V
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
81+ | 5 грн |
100+ | 4.17 грн |
250+ | 3.69 грн |
272+ | 3.24 грн |
745+ | 3.06 грн |
IPB024N08N5ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
товар відсутній
IDW10G65C5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 46A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 46A
товар відсутній
XC878CM16FFI5VACFXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: CAN x2; SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: CAN x2; SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
товар відсутній
IRF135B203 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 196.89 грн |
9+ | 103.4 грн |
24+ | 98.16 грн |
IRF135S203 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of channel: enhanced
товар відсутній
SPP80P06PHXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 340W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 340W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 243.7 грн |
6+ | 154.36 грн |
16+ | 146.11 грн |
BSP77E6433 |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
товар відсутній
IRS2186PBF |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
товар відсутній
IRS2186STRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
на замовлення 2390 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 131.53 грн |
10+ | 100.41 грн |
11+ | 82.42 грн |
30+ | 77.93 грн |
1000+ | 74.93 грн |
TLS850D0TAV50ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 70mV
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 70mV
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
товар відсутній
TLS850F0TAV33ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
товар відсутній
TLS850F2TAV50ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
товар відсутній
IPZ65R095C7XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
товар відсутній
IPP093N06N3GXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
DD340N18S |
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
BSC340N08NS3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 4556 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 59.71 грн |
50+ | 17.53 грн |
138+ | 16.56 грн |
AIGW50N65H5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
товар відсутній
IRFR3410TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7946TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFR825TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF7580MTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 116A
Power dissipation: 115W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 116A
Power dissipation: 115W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFH7084TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BGS12SN6E6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Application: telecommunication
Bandwidth: 0.1...6GHz
Output configuration: SPDT
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Application: telecommunication
Bandwidth: 0.1...6GHz
Output configuration: SPDT
товар відсутній
TLE4207GXUMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-DSO-14
Output current: 0.8A
Number of channels: 2
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...18V
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-DSO-14
Output current: 0.8A
Number of channels: 2
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...18V
Kind of package: reel; tape
на замовлення 2454 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 144.44 грн |
5+ | 119.89 грн |
8+ | 110.9 грн |
22+ | 104.9 грн |
100+ | 104.15 грн |
500+ | 100.41 грн |
TLE42502GHTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5...36V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4...40V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5...36V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4...40V
товар відсутній
TLE42642GHTSA2 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 5.5...45V
товар відсутній
TLE4264GHTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.16A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.16A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
товар відсутній
TLE4266GHTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
на замовлення 4158 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 123.46 грн |
10+ | 89.17 грн |
27+ | 84.67 грн |
100+ | 82.42 грн |
250+ | 80.92 грн |
TLE4268GXUMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
на замовлення 413 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 120.23 грн |
5+ | 101.16 грн |
10+ | 89.17 грн |
28+ | 83.92 грн |
250+ | 80.92 грн |
TLE4269GXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
товар відсутній
TLE4291EXUMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
товар відсутній
TLE42962GV33HTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 4...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 4...45V
товар відсутній
TLE42962GV50HTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
товар відсутній
TLE4296GV50HTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
товар відсутній
TLE42994EXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD
Kind of package: reel; tape
Input voltage: 4.4...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-SSOP-14-EP
Output voltage: 3.3V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD
Kind of package: reel; tape
Input voltage: 4.4...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-SSOP-14-EP
Output voltage: 3.3V
Output current: 0.15A
Type of integrated circuit: voltage regulator
товар відсутній
TLE7257SJXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
DC supply current: 3mA
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
DC supply current: 3mA
товар відсутній
TLE7258DXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-TSON-8
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
DC supply current: 3mA
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-TSON-8
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
DC supply current: 3mA
товар відсутній
TLE7268LCXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Supply voltage: 5.5...40V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Supply voltage: 5.5...40V DC
товар відсутній
TLE7268SKXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Supply voltage: 5.5...40V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Supply voltage: 5.5...40V DC
товар відсутній
AIKP20N60CTAKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 387 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 298.57 грн |
3+ | 245.02 грн |
5+ | 212.8 грн |
12+ | 200.81 грн |
250+ | 193.32 грн |
FP06R12W1T4B3BOMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-1
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-1
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2517.67 грн |
IRLR7807ZTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
BSM25GD120DN2E3224BOSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 25A
Power dissipation: 200W
Case: ECONOPACK 2K
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 25A
Power dissipation: 200W
Case: ECONOPACK 2K
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
AIKB20N60CTATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKQ120N60TXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 703nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 703nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKQ120N60TAXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
AIKQ120N60CTXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRFR3910TRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IPP037N08N3GXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 32 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 157.35 грн |
8+ | 120.64 грн |
20+ | 113.89 грн |
DD261N20K |
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V
Max. off-state voltage: 2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V
Max. off-state voltage: 2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
товар відсутній
TT122N22KOFHPSA2 |
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
IRFR3504ZTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IPP80R360P7XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.58 грн |
3+ | 170.09 грн |
6+ | 158.85 грн |
10+ | 153.61 грн |
16+ | 150.61 грн |
IRF3805PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP50R190CEXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній