Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5702) > Сторінка 3 з 96
Фото | Назва | Виробник | Інформація |
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GB100XCP12-227 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: PT Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V |
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GA040TH65 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-2 Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Structure: Single Current - Hold (Ih) (Max): 780 mA Current - Gate Trigger (Igt) (Max): 30 mA Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 40 A Current - On State (It (RMS)) (Max): 69 A Voltage - Off State: 6.5 kV |
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GA060TH65 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-2 Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Structure: Single Current - Gate Trigger (Igt) (Max): 100 mA Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 60 A Current - On State (It (RMS)) (Max): 104 A Voltage - Off State: 6.5 kV |
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GA080TH65 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-2 Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Structure: Single Current - Gate Trigger (Igt) (Max): 100 mA Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 80 A Current - On State (It (RMS)) (Max): 139 A Voltage - Off State: 6.5 kV |
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2N7635-GA | GeneSiC Semiconductor |
Description: TRANS SJT 650V 4A TO257 Packaging: Bulk Package / Case: TO-257-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 225°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C) Rds On (Max) @ Id, Vgs: 415mOhm @ 4A Power Dissipation (Max): 47W (Tc) Supplier Device Package: TO-257 Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V |
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2N7636-GA | GeneSiC Semiconductor |
Description: TRANS SJT 650V 4A TO276 Packaging: Bulk Package / Case: TO-276AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 225°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C) Rds On (Max) @ Id, Vgs: 415mOhm @ 4A Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-276 Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V |
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2N7637-GA | GeneSiC Semiconductor |
Description: TRANS SJT 650V 7A TO257 Packaging: Bulk Package / Case: TO-257-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 225°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C) Rds On (Max) @ Id, Vgs: 170mOhm @ 7A Power Dissipation (Max): 80W (Tc) Supplier Device Package: TO-257 Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V |
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2N7638-GA | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: TO-276AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 225°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C) Rds On (Max) @ Id, Vgs: 170mOhm @ 8A Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-276 Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V |
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2N7639-GA | GeneSiC Semiconductor |
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2N7640-GA | GeneSiC Semiconductor |
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GA03JT12-247 | GeneSiC Semiconductor |
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на замовлення 236 шт: термін постачання 21-31 дні (днів) |
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GA06JT12-247 | GeneSiC Semiconductor |
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GB01SLT06-214 | GeneSiC Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V |
на замовлення 13161 шт: термін постачання 21-31 дні (днів) |
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GB02SLT06-214 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 650V 2A |
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GB01SLT12-214 | GeneSiC Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 69pF @ 1V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
на замовлення 13148 шт: термін постачання 21-31 дні (днів) |
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GB02SLT12-214 | GeneSiC Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 18198 шт: термін постачання 21-31 дні (днів) |
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GAP3SLT33-214 | GeneSiC Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 42pF @ 1V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA Current - Reverse Leakage @ Vr: 10 µA @ 3300 V |
на замовлення 4738 шт: термін постачання 21-31 дні (днів) |
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GA05JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 5A |
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GA10JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 10A |
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GA02JT33-SMB | GeneSiC Semiconductor | Description: TRANS SJT 3.3KV 2A |
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GA05JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 5A |
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GA10JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 10A |
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GA02JT33-SMB | GeneSiC Semiconductor | Description: TRANS SJT 3.3KV 2A |
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GB01SLT06-214 | GeneSiC Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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GB02SLT06-214 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 650V 2A |
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GB01SLT12-214 | GeneSiC Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 69pF @ 1V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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GB02SLT12-214 | GeneSiC Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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GAP3SLT33-214 | GeneSiC Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 42pF @ 1V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA Current - Reverse Leakage @ Vr: 10 µA @ 3300 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GA05JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 5A |
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GA10JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 10A |
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GA02JT33-SMB | GeneSiC Semiconductor | Description: TRANS SJT 3.3KV 2A |
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GB50SLT12-247 | GeneSiC Semiconductor |
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GB04SLT17-247 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 1700V 4A |
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GB08SLT17-247 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 1700V 8A |
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GB16SLT17-247 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 1700V 16A |
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GAP3SLT33-220FP | GeneSiC Semiconductor |
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на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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GA05JT12-263 | GeneSiC Semiconductor |
![]() Packaging: Tube Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Power Dissipation (Max): 106W (Tc) Supplier Device Package: TO-263-7 Drain to Source Voltage (Vdss): 1200 V |
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GA05JT12-247 | GeneSiC Semiconductor |
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на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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GA10JT12-263 | GeneSiC Semiconductor |
![]() Packaging: Tube Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 10A Power Dissipation (Max): 170W (Tc) Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V |
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GA10JT12-247 | GeneSiC Semiconductor |
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на замовлення 221 шт: термін постачання 21-31 дні (днів) |
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GA20JT12-247 | GeneSiC Semiconductor |
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на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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GA20JT12-263 | GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 20A Power Dissipation (Max): 282W (Tc) Supplier Device Package: TO-263-7 Part Status: Active Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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GA50JT12-247 | GeneSiC Semiconductor |
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на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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GA10SICP12-247 | GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Current: 10 A Voltage: 1.2 kV |
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GA20SICP12-263 | GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Part Status: Active Current: 20 A Voltage: 1.2 kV |
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GA50SICP12-227 | GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Current: 50 A Voltage: 1.2 kV |
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GA100SICP12-227 | GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Current: 100 A Voltage: 1.2 kV |
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GA100SCPL12-227E | GeneSiC Semiconductor | Description: SIC PHASE LEG BRIDGE 100A 1.2KV |
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150K100A | GeneSiC Semiconductor |
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150K20A | GeneSiC Semiconductor |
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150K40A | GeneSiC Semiconductor |
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150K60A | GeneSiC Semiconductor |
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150K80A | GeneSiC Semiconductor |
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150KR100A | GeneSiC Semiconductor |
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150KR20A | GeneSiC Semiconductor |
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150KR40A | GeneSiC Semiconductor |
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150KR60A | GeneSiC Semiconductor |
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150KR80A | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150A Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A Current - Reverse Leakage @ Vr: 32 mA @ 800 V |
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1N1183 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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1N1183AR | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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GB100XCP12-227 |
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Виробник: GeneSiC Semiconductor
Description: IGBT MODULE 1200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V
Description: IGBT MODULE 1200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V
товар відсутній
GA040TH65 |
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Виробник: GeneSiC Semiconductor
Description: MOD THYRSTR SIC SGL 6500V SOT227
Packaging: Bulk
Package / Case: SOT-227-2
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 780 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 40 A
Current - On State (It (RMS)) (Max): 69 A
Voltage - Off State: 6.5 kV
Description: MOD THYRSTR SIC SGL 6500V SOT227
Packaging: Bulk
Package / Case: SOT-227-2
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 780 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 40 A
Current - On State (It (RMS)) (Max): 69 A
Voltage - Off State: 6.5 kV
товар відсутній
GA060TH65 |
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Виробник: GeneSiC Semiconductor
Description: MOD THYRSTR SIC SGL 6500V SOT227
Packaging: Bulk
Package / Case: SOT-227-2
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 60 A
Current - On State (It (RMS)) (Max): 104 A
Voltage - Off State: 6.5 kV
Description: MOD THYRSTR SIC SGL 6500V SOT227
Packaging: Bulk
Package / Case: SOT-227-2
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 60 A
Current - On State (It (RMS)) (Max): 104 A
Voltage - Off State: 6.5 kV
товар відсутній
GA080TH65 |
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Виробник: GeneSiC Semiconductor
Description: MOD THYRSTR SIC SGL 6500V SOT227
Packaging: Bulk
Package / Case: SOT-227-2
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
Description: MOD THYRSTR SIC SGL 6500V SOT227
Packaging: Bulk
Package / Case: SOT-227-2
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
товар відсутній
2N7635-GA |
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Power Dissipation (Max): 47W (Tc)
Supplier Device Package: TO-257
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
Description: TRANS SJT 650V 4A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Power Dissipation (Max): 47W (Tc)
Supplier Device Package: TO-257
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
товар відсутній
2N7636-GA |
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO276
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-276
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
Description: TRANS SJT 650V 4A TO276
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-276
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
товар відсутній
2N7637-GA |
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 650V 7A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7A
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-257
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V
Description: TRANS SJT 650V 7A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7A
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-257
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V
товар відсутній
2N7638-GA |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 650V 8A TO276
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
Rds On (Max) @ Id, Vgs: 170mOhm @ 8A
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-276
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V
Description: TRANS SJT 650V 8A TO276
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
Rds On (Max) @ Id, Vgs: 170mOhm @ 8A
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-276
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V
товар відсутній
GA03JT12-247 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 3A TO-247AB
Description: TRANS SJT 1200V 3A TO-247AB
на замовлення 236 шт:
термін постачання 21-31 дні (днів)GA06JT12-247 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 6A TO-247AB
Description: TRANS SJT 1200V 6A TO-247AB
товар відсутній
GB01SLT06-214 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
на замовлення 13161 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 114.05 грн |
10+ | 95.62 грн |
25+ | 90.26 грн |
100+ | 77.75 грн |
250+ | 73.33 грн |
500+ | 70.17 грн |
1000+ | 66.53 грн |
GB02SLT06-214 |
Виробник: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 650V 2A
Description: SIC SCHOTTKY DIODE 650V 2A
товар відсутній
GB01SLT12-214 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 2.5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 2.5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 13148 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 179.43 грн |
10+ | 152.87 грн |
25+ | 145.49 грн |
100+ | 126.42 грн |
250+ | 120.74 грн |
500+ | 116.31 грн |
1000+ | 110.05 грн |
GB02SLT12-214 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 18198 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 223.53 грн |
10+ | 191.97 грн |
25+ | 183.21 грн |
100+ | 159.93 грн |
250+ | 152.34 грн |
500+ | 147.28 грн |
1000+ | 139.9 грн |
GAP3SLT33-214 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
на замовлення 4738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 762.58 грн |
10+ | 669.11 грн |
25+ | 644.49 грн |
100+ | 571.51 грн |
250+ | 551.01 грн |
500+ | 535.64 грн |
1000+ | 512.36 грн |
GB01SLT06-214 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 70.65 грн |
6000+ | 65.34 грн |
GB02SLT06-214 |
Виробник: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 650V 2A
Description: SIC SCHOTTKY DIODE 650V 2A
товар відсутній
GB01SLT12-214 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 2.5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 2.5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 117.51 грн |
6000+ | 109.12 грн |
GB02SLT12-214 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 150.39 грн |
GAP3SLT33-214 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 555.14 грн |
GB50SLT12-247 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 50A TO247-2
Description: DIODE SIL CARB 1.2KV 50A TO247-2
товар відсутній
GB04SLT17-247 |
Виробник: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1700V 4A
Description: SIC SCHOTTKY DIODE 1700V 4A
товар відсутній
GB08SLT17-247 |
Виробник: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1700V 8A
Description: SIC SCHOTTKY DIODE 1700V 8A
товар відсутній
GB16SLT17-247 |
Виробник: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1700V 16A
Description: SIC SCHOTTKY DIODE 1700V 16A
товар відсутній
GAP3SLT33-220FP |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 3.3KV 300MA TO220
Description: DIODE SCHOTTKY 3.3KV 300MA TO220
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 900.96 грн |
GA05JT12-263 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 15A D2PAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-263-7
Drain to Source Voltage (Vdss): 1200 V
Description: TRANS SJT 1200V 15A D2PAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-263-7
Drain to Source Voltage (Vdss): 1200 V
товар відсутній
GA05JT12-247 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 5A
Description: TRANS SJT 1200V 5A
на замовлення 15 шт:
термін постачання 21-31 дні (днів)GA10JT12-263 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Description: TRANS SJT 1200V 25A
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
товар відсутній
GA10JT12-247 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 10A
Description: TRANS SJT 1.2KV 10A
на замовлення 221 шт:
термін постачання 21-31 дні (днів)GA20JT12-247 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 20A
Description: TRANS SJT 1.2KV 20A
на замовлення 45 шт:
термін постачання 21-31 дні (днів)GA20JT12-263 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 45A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
Description: TRANS SJT 1200V 45A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2793.35 грн |
10+ | 2481.01 грн |
GA50JT12-247 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 100A TO247AB
Description: TRANS SJT 1200V 100A TO247AB
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 7635.71 грн |
GA10SICP12-247 |
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Виробник: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 10A 1.2KV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Current: 10 A
Voltage: 1.2 kV
Description: SIC CO-PACK SJT/RECT 10A 1.2KV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Current: 10 A
Voltage: 1.2 kV
товар відсутній
GA20SICP12-263 |
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Виробник: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 20A 1.2KV
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Part Status: Active
Current: 20 A
Voltage: 1.2 kV
Description: SIC CO-PACK SJT/RECT 20A 1.2KV
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Part Status: Active
Current: 20 A
Voltage: 1.2 kV
товар відсутній
GA50SICP12-227 |
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Виробник: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 50A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current: 50 A
Voltage: 1.2 kV
Description: SIC CO-PACK SJT/RECT 50A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current: 50 A
Voltage: 1.2 kV
товар відсутній
GA100SICP12-227 |
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Виробник: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 100A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current: 100 A
Voltage: 1.2 kV
Description: SIC CO-PACK SJT/RECT 100A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current: 100 A
Voltage: 1.2 kV
товар відсутній
GA100SCPL12-227E |
Виробник: GeneSiC Semiconductor
Description: SIC PHASE LEG BRIDGE 100A 1.2KV
Description: SIC PHASE LEG BRIDGE 100A 1.2KV
товар відсутній
150K20A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 150A DO205AA
Description: DIODE GEN PURP 200V 150A DO205AA
товар відсутній
150K40A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 150A DO205AA
Description: DIODE GEN PURP 400V 150A DO205AA
товар відсутній
150K60A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A DO205AA
Description: DIODE GEN PURP 600V 150A DO205AA
товар відсутній
150K80A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 150A DO205AA
Description: DIODE GEN PURP 800V 150A DO205AA
товар відсутній
150KR100A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV DO205AA
Description: DIODE GEN PURP REV 1KV DO205AA
товар відсутній
150KR20A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN REV 200V 150A DO205AA
Description: DIODE GEN REV 200V 150A DO205AA
товар відсутній
150KR40A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN REV 400V 150A DO205AA
Description: DIODE GEN REV 400V 150A DO205AA
товар відсутній
150KR60A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A DO205AA
Description: DIODE GEN PURP 600V 150A DO205AA
товар відсутній
150KR80A |
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Виробник: GeneSiC Semiconductor
Description: DIODE GP REV 800V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A
Current - Reverse Leakage @ Vr: 32 mA @ 800 V
Description: DIODE GP REV 800V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A
Current - Reverse Leakage @ Vr: 32 mA @ 800 V
товар відсутній
1N1183 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1183AR |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 50V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній