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1N6096 GeneSiC Semiconductor 1n6096.pdf Description: DIODE SCHOTTKY 40V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
товар відсутній
1N6096R GeneSiC Semiconductor 1n6096.pdf Description: DIODE SCHOTTKY REV 40V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
товар відсутній
1N6097R GeneSiC Semiconductor 1n6097.pdf Description: DIODE SCHOTTKY REV 30V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
1N6098R GeneSiC Semiconductor 1n6097.pdf Description: DIODE SCHOTTKY REV 40V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
2W005M GeneSiC Semiconductor 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 50V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
2W01M GeneSiC Semiconductor 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 100V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
2W02M GeneSiC Semiconductor 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 200V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
2W04M GeneSiC Semiconductor 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 400V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
2W06M GeneSiC Semiconductor 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
2W08M GeneSiC Semiconductor 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 800V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
2W10M GeneSiC Semiconductor 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
BR101 GeneSiC Semiconductor br1005.pdf Description: BRIDGE RECT 1P 100V 10A BR-10
товар відсутній
BR102 GeneSiC Semiconductor br1005.pdf Description: BRIDGE RECT 1P 200V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BR104 GeneSiC Semiconductor br1005.pdf Description: BRIDGE RECT 1P 400V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4972 шт:
термін постачання 21-31 дні (днів)
3+147.5 грн
10+ 106.89 грн
25+ 95.38 грн
100+ 75.28 грн
250+ 67.19 грн
500+ 61.63 грн
1000+ 55.59 грн
2500+ 49.55 грн
Мінімальне замовлення: 3
BR106 GeneSiC Semiconductor br1010.pdf Description: BRIDGE RECT 1P 600V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BR108 GeneSiC Semiconductor br1010.pdf Description: BRIDGE RECT 1P 800V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BR305 GeneSiC Semiconductor br305.pdf Description: BRIDGE RECT 1PHASE 50V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
BR31 GeneSiC Semiconductor br305_thru_br34.pdf Description: DIODE BRIDGE 100V 3A BR-3
товар відсутній
BR310 GeneSiC Semiconductor br36.pdf Description: BRIDGE RECT 1PHASE 1KV 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
BR32 GeneSiC Semiconductor br305_thru_br34.pdf Description: DIODE BRIDGE 200V 3A BR-3
товар відсутній
BR34 GeneSiC Semiconductor br305.pdf Description: BRIDGE RECT 1PHASE 400V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BR36 GeneSiC Semiconductor br36_thru_br310.pdf Description: DIODE BRIDGE 600V 3A BR-3
товар відсутній
BR38 GeneSiC Semiconductor br36_thru_br310.pdf Description: DIODE BRIDGE 800V 3A BR-3
товар відсутній
BR61 GeneSiC Semiconductor br605_thru_br64.pdf Description: DIODE BRIDGE 100V 6A BR-6
товар відсутній
BR610 GeneSiC Semiconductor br66.pdf Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
BR62 BR62 GeneSiC Semiconductor br62.pdf Description: BRIDGE RECT 1PHASE 200V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1331 шт:
термін постачання 21-31 дні (днів)
3+129.25 грн
10+ 90.42 грн
25+ 79.74 грн
100+ 61.83 грн
250+ 54.52 грн
500+ 49.59 грн
1000+ 44.37 грн
Мінімальне замовлення: 3
BR64 GeneSiC Semiconductor br62.pdf Description: BRIDGE RECT 1PHASE 400V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BR66 GeneSiC Semiconductor br66_thru_br610.pdf Description: DIODE BRIDGE 600V 6A BR-6
товар відсутній
BR68 GeneSiC Semiconductor br66.pdf Description: BRIDGE RECT 1PHASE 800V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BR805 BR805 GeneSiC Semiconductor br81.pdf Description: BRIDGE RECT 1PHASE 50V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
BR81 BR81 GeneSiC Semiconductor br81.pdf Description: BRIDGE RECT 1PHASE 100V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
3+142.18 грн
10+ 101.91 грн
25+ 90.67 грн
100+ 71.25 грн
250+ 63.32 грн
Мінімальне замовлення: 3
BR82 GeneSiC Semiconductor br805_thru_br84.pdf Description: DIODE BRIDGE 200V 8A BR-8
товар відсутній
BR84 GeneSiC Semiconductor br805_thru_br84.pdf Description: DIODE BRIDGE 400V 8A BR-8
товар відсутній
BR86 GeneSiC Semiconductor br86_thru_br810.pdf Description: DIODE BRIDGE 600V 8A BR-8
товар відсутній
BR88 GeneSiC Semiconductor br86_thru_br810.pdf Description: DIODE BRIDGE 800V 8A BR-8
товар відсутній
DB101G GeneSiC Semiconductor db101g.pdf Description: BRIDGE RECT 1PHASE 50V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 19975 шт:
термін постачання 21-31 дні (днів)
4+91.24 грн
10+ 51.69 грн
25+ 41.76 грн
100+ 28.51 грн
250+ 23.07 грн
500+ 19.66 грн
1000+ 16.48 грн
2500+ 13.31 грн
Мінімальне замовлення: 4
DB102G GeneSiC Semiconductor db101g.pdf Description: BRIDGE RECT 1PHASE 100V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
DB103G DB103G GeneSiC Semiconductor db101g.pdf Description: BRIDGE RECT 1PHASE 200V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 5651 шт:
термін постачання 21-31 дні (днів)
4+90.48 грн
10+ 51.32 грн
25+ 41.5 грн
100+ 28.32 грн
250+ 22.92 грн
500+ 19.53 грн
1000+ 16.37 грн
2500+ 13.22 грн
Мінімальне замовлення: 4
DB104G GeneSiC Semiconductor db101g.pdf Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
DB105G GeneSiC Semiconductor db105g.pdf Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
DB106G GeneSiC Semiconductor db105g.pdf Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
DB107G GeneSiC Semiconductor db105g.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
FR12B02 GeneSiC Semiconductor fr12b02_thru_fr12jr02.pdf Description: DIODE GEN PURP 100V 12A DO4
товар відсутній
FR12B05 GeneSiC Semiconductor fr12b05.pdf Description: DIODE GEN PURP 100V 12A DO4
товар відсутній
FR12BR02 GeneSiC Semiconductor fr12b02_thru_fr12jr02.pdf Description: DIODE GEN PURP REV 100V 12A DO4
товар відсутній
FR12BR05 GeneSiC Semiconductor fr12b05_thru_fr12jr05.pdf Description: DIODE GEN PURP REV 100V 12A DO4
товар відсутній
FR12D02 GeneSiC Semiconductor fr12b02.pdf Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товар відсутній
FR12D05 GeneSiC Semiconductor fr12b05_thru_fr12jr05.pdf Description: DIODE GEN PURP 200V 12A DO4
товар відсутній
FR12DR02 GeneSiC Semiconductor fr12b02_thru_fr12jr02.pdf Description: DIODE GEN PURP REV 200V 12A DO4
товар відсутній
FR12DR05 GeneSiC Semiconductor fr12b05_thru_fr12jr05.pdf Description: DIODE GEN PURP REV 200V 12A DO4
товар відсутній
FR12G02 GeneSiC Semiconductor fr12b02_thru_fr12jr02.pdf Description: DIODE GEN PURP 400V 12A DO4
товар відсутній
FR12G05 FR12G05 GeneSiC Semiconductor fr12b05_thru_fr12jr05.pdf Description: DIODE GEN PURP 400V 12A DO4
товар відсутній
FR12GR02 GeneSiC Semiconductor fr12b02_thru_fr12jr02.pdf Description: DIODE GEN PURP REV 400V 12A DO4
товар відсутній
FR12GR05 GeneSiC Semiconductor fr12b05_thru_fr12jr05.pdf Description: DIODE GEN PURP REV 400V 12A DO4
товар відсутній
FR12J02 GeneSiC Semiconductor fr12b02.pdf Description: DIODE GEN PURP 600V 12A DO4
товар відсутній
FR12J05 GeneSiC Semiconductor fr12b05_thru_fr12jr05.pdf Description: DIODE GEN PURP 600V 12A DO4
товар відсутній
FR12JR02 FR12JR02 GeneSiC Semiconductor fr12b05_thru_fr12jr05.pdf Description: DIODE GEN PURP REV 600V 12A DO4
товар відсутній
FR12JR05 GeneSiC Semiconductor fr12b05_thru_fr12jr05.pdf Description: DIODE GEN PURP REV 600V 12A DO4
товар відсутній
FR12K05 GeneSiC Semiconductor fr12k05_thru_fr12mr05.pdf Description: DIODE GEN PURP 800V 12A DO4
товар відсутній
FR12KR05 GeneSiC Semiconductor fr12k05_thru_fr12mr05.pdf Description: DIODE GEN PURP REV 800V 12A DO4
товар відсутній
1N6096 1n6096.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
товар відсутній
1N6096R 1n6096.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
товар відсутній
1N6097R 1n6097.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
1N6098R 1n6097.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 50 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
2W005M 2W005M-2W10M.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
2W01M 2W005M-2W10M.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
2W02M 2W005M-2W10M.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
2W04M 2W005M-2W10M.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
2W06M 2W005M-2W10M.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
2W08M 2W005M-2W10M.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
2W10M 2W005M-2W10M.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
BR101 br1005.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 10A BR-10
товар відсутній
BR102 br1005.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BR104 br1005.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4972 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+147.5 грн
10+ 106.89 грн
25+ 95.38 грн
100+ 75.28 грн
250+ 67.19 грн
500+ 61.63 грн
1000+ 55.59 грн
2500+ 49.55 грн
Мінімальне замовлення: 3
BR106 br1010.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BR108 br1010.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BR305 br305.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
BR31 br305_thru_br34.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 3A BR-3
товар відсутній
BR310 br36.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
BR32 br305_thru_br34.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 3A BR-3
товар відсутній
BR34 br305.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BR36 br36_thru_br310.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 3A BR-3
товар відсутній
BR38 br36_thru_br310.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 3A BR-3
товар відсутній
BR61 br605_thru_br64.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 6A BR-6
товар відсутній
BR610 br66.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
BR62 br62.pdf
BR62
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+129.25 грн
10+ 90.42 грн
25+ 79.74 грн
100+ 61.83 грн
250+ 54.52 грн
500+ 49.59 грн
1000+ 44.37 грн
Мінімальне замовлення: 3
BR64 br62.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BR66 br66_thru_br610.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 6A BR-6
товар відсутній
BR68 br66.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BR805 br81.pdf
BR805
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
BR81 br81.pdf
BR81
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+142.18 грн
10+ 101.91 грн
25+ 90.67 грн
100+ 71.25 грн
250+ 63.32 грн
Мінімальне замовлення: 3
BR82 br805_thru_br84.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 8A BR-8
товар відсутній
BR84 br805_thru_br84.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 8A BR-8
товар відсутній
BR86 br86_thru_br810.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 8A BR-8
товар відсутній
BR88 br86_thru_br810.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 8A BR-8
товар відсутній
DB101G db101g.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 19975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+91.24 грн
10+ 51.69 грн
25+ 41.76 грн
100+ 28.51 грн
250+ 23.07 грн
500+ 19.66 грн
1000+ 16.48 грн
2500+ 13.31 грн
Мінімальне замовлення: 4
DB102G db101g.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
DB103G db101g.pdf
DB103G
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 5651 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+90.48 грн
10+ 51.32 грн
25+ 41.5 грн
100+ 28.32 грн
250+ 22.92 грн
500+ 19.53 грн
1000+ 16.37 грн
2500+ 13.22 грн
Мінімальне замовлення: 4
DB104G db101g.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
DB105G db105g.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
DB106G db105g.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
DB107G db105g.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
FR12B02 fr12b02_thru_fr12jr02.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
товар відсутній
FR12B05 fr12b05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
товар відсутній
FR12BR02 fr12b02_thru_fr12jr02.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
товар відсутній
FR12BR05 fr12b05_thru_fr12jr05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
товар відсутній
FR12D02 fr12b02.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товар відсутній
FR12D05 fr12b05_thru_fr12jr05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
товар відсутній
FR12DR02 fr12b02_thru_fr12jr02.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
товар відсутній
FR12DR05 fr12b05_thru_fr12jr05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
товар відсутній
FR12G02 fr12b02_thru_fr12jr02.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
товар відсутній
FR12G05 fr12b05_thru_fr12jr05.pdf
FR12G05
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
товар відсутній
FR12GR02 fr12b02_thru_fr12jr02.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
товар відсутній
FR12GR05 fr12b05_thru_fr12jr05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
товар відсутній
FR12J02 fr12b02.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
товар відсутній
FR12J05 fr12b05_thru_fr12jr05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
товар відсутній
FR12JR02 fr12b05_thru_fr12jr05.pdf
FR12JR02
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
товар відсутній
FR12JR05 fr12b05_thru_fr12jr05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
товар відсутній
FR12K05 fr12k05_thru_fr12mr05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 12A DO4
товар відсутній
FR12KR05 fr12k05_thru_fr12mr05.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 12A DO4
товар відсутній
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