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GB100XCP12-227 GeneSiC Semiconductor
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Description: IGBT MODULE 1200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V
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Технічний опис GB100XCP12-227 GeneSiC Semiconductor
Description: IGBT MODULE 1200V 100A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: PT, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V.
Інші пропозиції GB100XCP12-227
Фото | Назва | Виробник | Інформація |
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GB100XCP12-227 | Виробник : GeneSiC Semiconductor |
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