Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5727) > Сторінка 8 з 96
| Фото | Назва | Виробник | Інформація |
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| FR85K05 | GeneSiC Semiconductor |
 Description: DIODE GEN PURP 800V 85A DO5 |
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| FR85KR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 800V 85A DO5 |
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| FR85M05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 85A DO5 |
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| FR85MR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1KV 85A DO5 |
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FST100100 | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 100A TO249AB |
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FST10020 | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 100A TO249AB |
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FST10030 | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 100A TO249AB |
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FST10035 | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 100A TO249AB |
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FST10040 | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 100A TO249AB |
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FST10045 | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 100A TO249AB |
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FST10060 | GeneSiC Semiconductor |
Description: DIODE MODULE 60V 100A TO249AB |
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FST10080 | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 100A TO249AB |
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FST120100 | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 120A TO249AB |
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FST12020 | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 120A TO249AB |
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FST12030 | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 120A TO249AB Packaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
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FST12035 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 35V 120A TO249AB Packaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
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FST12040 | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 120A TO249AB |
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FST12045 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 45V 120A TO249AB Packaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
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FST12060 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 60V 120A TO249AB Packaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
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FST12080 | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 120A TO249AB |
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FST160100 | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 160A TO249AB Packaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 160A (DC) Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 160 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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FST16020 | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 160A TO249AB |
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FST16030 | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 160A TO249AB |
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FST16040 | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 160A TO249AB |
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FST16045 | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 160A TO249AB |
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FST16060 | GeneSiC Semiconductor |
Description: DIODE MODULE 60V 160A TO249AB Packaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 160A (DC) Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 160 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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FST16080 | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 160A TO249AB |
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FST83100M | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 80A D61-3M Packaging: Bulk Package / Case: D61-3M Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 80A (DC) Supplier Device Package: D61-3M Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
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| FST83100SM | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 80A D61-3SM Packaging: Bulk Package / Case: D61-3SM Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 80A (DC) Supplier Device Package: D61-3SM Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
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FST8320M | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 80A D61-3M |
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| FST8320SM | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 80A D61-3SM |
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FST8330M | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 80A D61-3M |
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| FST8330SM | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 80A D61-3SM |
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FST8335M | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 80A D61-3M |
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| FST8335SM | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 80A D61-3SM |
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FST8340M | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 80A D61-3M |
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| FST8340SM | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 80A D61-3SM |
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FST8345M | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 80A D61-3M |
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| FST8345SM | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 80A D61-3SM |
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FST8360M | GeneSiC Semiconductor |
Description: DIODE MODULE 60V 80A D61-3M |
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| FST8360SM | GeneSiC Semiconductor |
Description: DIODE MODULE 60V 80A D61-3SM |
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FST8380M | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 80A D61-3M |
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| FST8380SM | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 80A D61-3SM |
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GBL005 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 4A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 178 шт: термін постачання 21-31 дні (днів) |
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| GBL01 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 4A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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| GBL10 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 4A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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| GBPC15010T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 15A GBPC-T Packaging: Bulk Package / Case: 4-Square, GBPC-T Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-T Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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| GBPC1501T | GeneSiC Semiconductor |
Description: DIODE BRIDGE 100V 15A GBPC-T/W |
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| GBPC1502T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 15A GBPC Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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| GBPC1504T | GeneSiC Semiconductor |
Description: DIODE BRIDGE 400V 15A GBPC-T/W |
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| GBPC1506T | GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 15A GBPC-T/W |
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| GBPC1508T | GeneSiC Semiconductor |
Description: DIODE BRIDGE 800V 15A GBPC-T/W |
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| GBPC25005T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 25A GBPC |
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| GBPC25010T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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| GBPC2501T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 25A GBPC Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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| GBPC2502T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 25A GBPC |
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GBPC2504T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 25A GBPC Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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GBPC2506T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 25A GBPC Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 2016 шт: термін постачання 21-31 дні (днів) |
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GBPC2508T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 25A GBPC Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| GBPC35005T | GeneSiC Semiconductor |
Description: DIODE BRIDGE 50V 35A GBPC-T/W |
товар відсутній |
| FR85KR05 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 85A DO5
Description: DIODE GEN PURP REV 800V 85A DO5
товар відсутній
| FST100100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 100A TO249AB
Description: DIODE MODULE 100V 100A TO249AB
товар відсутній
| FST120100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 120A TO249AB
Description: DIODE MODULE 100V 120A TO249AB
товар відсутній
| FST12030 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE MODULE 30V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
товар відсутній
| FST12035 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 35V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE MOD SCHOT 35V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
товар відсутній
| FST12045 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 45V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE MOD SCHOT 45V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
товар відсутній
| FST12060 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 60V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE MOD SCHOT 60V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
товар відсутній
| FST160100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 100V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| FST16060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 60V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| FST83100M |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 80A D61-3M
Packaging: Bulk
Package / Case: D61-3M
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A (DC)
Supplier Device Package: D61-3M
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE MODULE 100V 80A D61-3M
Packaging: Bulk
Package / Case: D61-3M
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A (DC)
Supplier Device Package: D61-3M
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товар відсутній
| FST83100SM |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 80A D61-3SM
Packaging: Bulk
Package / Case: D61-3SM
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A (DC)
Supplier Device Package: D61-3SM
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE MODULE 100V 80A D61-3SM
Packaging: Bulk
Package / Case: D61-3SM
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A (DC)
Supplier Device Package: D61-3SM
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товар відсутній
| GBL005 |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 366.5 грн |
| GBL01 |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
| GBL10 |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
| GBPC15010T |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 15A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
| GBPC1501T |
|
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 15A GBPC-T/W
Description: DIODE BRIDGE 100V 15A GBPC-T/W
товар відсутній
| GBPC1502T |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| GBPC1504T |
|
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 15A GBPC-T/W
Description: DIODE BRIDGE 400V 15A GBPC-T/W
товар відсутній
| GBPC1506T |
|
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 15A GBPC-T/W
Description: DIODE BRIDGE 600V 15A GBPC-T/W
товар відсутній
| GBPC1508T |
|
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 15A GBPC-T/W
Description: DIODE BRIDGE 800V 15A GBPC-T/W
товар відсутній
| GBPC25005T |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 25A GBPC
Description: BRIDGE RECT 1PHASE 50V 25A GBPC
товар відсутній
| GBPC25010T |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
| GBPC2501T |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
| GBPC2502T |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 25A GBPC
Description: BRIDGE RECT 1PHASE 200V 25A GBPC
товар відсутній
| GBPC2504T |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.8 грн |
| 10+ | 234.31 грн |
| 25+ | 213.97 грн |
| GBPC2506T |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.8 грн |
| 10+ | 234.31 грн |
| 25+ | 213.97 грн |
| 100+ | 174.93 грн |
| 250+ | 159.73 грн |
| 500+ | 149.06 грн |
| 1000+ | 136.84 грн |
| GBPC2508T |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 293.35 грн |
| GBPC35005T |
|
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 50V 35A GBPC-T/W
Description: DIODE BRIDGE 50V 35A GBPC-T/W
товар відсутній