2N7638-GA GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: TRANS SJT 650V 8A TO276
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
Rds On (Max) @ Id, Vgs: 170mOhm @ 8A
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-276
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V
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Технічний опис 2N7638-GA GeneSiC Semiconductor
Description: TRANS SJT 650V 8A TO276, Packaging: Bulk, Package / Case: TO-276AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 225°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C), Rds On (Max) @ Id, Vgs: 170mOhm @ 8A, Power Dissipation (Max): 200W (Tc), Supplier Device Package: TO-276, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V.