Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5727) > Сторінка 7 з 96
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| FR40K05 | GeneSiC Semiconductor |
 Description: DIODE GEN PURP 800V 40A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
товар відсутній |
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FR40KR05 | GeneSiC Semiconductor |
Description: DIODE GP REV 800V 40A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
на замовлення 78 шт: термін постачання 21-31 дні (днів) |
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FR40M05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
товар відсутній |
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FR40MR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1KV 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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| FR6A02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 6A DO4 |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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| FR6A05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 16A DO4 |
товар відсутній |
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| FR6AR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 6A DO4 |
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| FR6AR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 16A DO4 |
товар відсутній |
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| FR6B02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 6A DO4 |
товар відсутній |
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| FR6B05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 16A DO4 |
товар відсутній |
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| FR6BR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 6A DO4 |
товар відсутній |
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| FR6BR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 16A DO4 |
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| FR6D02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 6A DO4 |
товар відсутній |
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| FR6D05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 16A DO4 |
товар відсутній |
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| FR6DR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 6A DO4 |
товар відсутній |
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| FR6DR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 16A DO4 |
товар відсутній |
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| FR6G02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 6A DO4 |
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| FR6G05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 16A DO4 |
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| FR6GR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 6A DO4 |
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| FR6GR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 16A DO4 |
товар відсутній |
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| FR6J02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 6A DO4 |
товар відсутній |
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| FR6J05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 6A DO4 |
товар відсутній |
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| FR6JR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 6A DO4 |
товар відсутній |
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| FR6JR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 6A DO4 |
товар відсутній |
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| FR6K05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 6A DO4 |
товар відсутній |
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| FR6KR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 800V 6A DO4 |
товар відсутній |
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| FR6M05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 6A DO4 |
товар відсутній |
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| FR6MR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1KV 6A DO4 |
товар відсутній |
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| FR70B02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 70A DO5 |
товар відсутній |
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| FR70B05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 70A DO5 |
товар відсутній |
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| FR70BR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 70A DO5 |
товар відсутній |
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| FR70BR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 70A DO5 |
товар відсутній |
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| FR70D02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 70A DO5 |
товар відсутній |
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| FR70D05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 70A DO5 |
товар відсутній |
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| FR70DR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 70A DO5 |
товар відсутній |
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| FR70DR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 70A DO5 |
товар відсутній |
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| FR70G05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 70A DO5 |
товар відсутній |
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| FR70GR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 70A DO5 |
товар відсутній |
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| FR70J02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 70A DO5 |
товар відсутній |
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| FR70J05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 70A DO5 |
товар відсутній |
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| FR70JR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 70A DO5 |
товар відсутній |
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| FR70JR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 70A DO5 |
товар відсутній |
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| FR70K05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
товар відсутній |
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| FR70KR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 800V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
товар відсутній |
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| FR70M05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 70A DO5 |
товар відсутній |
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| FR70MR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1KV 70A DO5 |
товар відсутній |
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| FR85B02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 85A DO5 |
товар відсутній |
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| FR85B05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 85A DO5 |
товар відсутній |
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| FR85BR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 85A DO5 |
товар відсутній |
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| FR85BR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 85A DO5 |
товар відсутній |
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| FR85D02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 85A DO5 |
товар відсутній |
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| FR85D05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 85A DO5 |
товар відсутній |
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| FR85DR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 85A DO5 |
товар відсутній |
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| FR85DR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 85A DO5 |
товар відсутній |
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| FR85G05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 85A DO5 |
товар відсутній |
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| FR85GR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 85A DO5 |
товар відсутній |
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| FR85J02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 85A DO5 |
товар відсутній |
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| FR85J05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 85A DO5 |
товар відсутній |
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FR85JR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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FR85JR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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| FR40K05 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP 800V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товар відсутній
| FR40KR05 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GP REV 800V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GP REV 800V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1242.67 грн |
| 10+ | 1015.23 грн |
| 25+ | 950.78 грн |
| FR40M05 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товар відсутній
| FR40MR05 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP REV 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1226.32 грн |
| 10+ | 1001.67 грн |
| 25+ | 938.04 грн |
| 100+ | 797.09 грн |
| FR6A02 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 6A DO4
Description: DIODE GEN PURP 50V 6A DO4
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 588.26 грн |
| FR70BR02 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 70A DO5
Description: DIODE GEN PURP REV 100V 70A DO5
товар відсутній
| FR70BR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 70A DO5
Description: DIODE GEN PURP REV 100V 70A DO5
товар відсутній
| FR70DR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 70A DO5
Description: DIODE GEN PURP REV 200V 70A DO5
товар відсутній
| FR70DR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 70A DO5
Description: DIODE GEN PURP REV 200V 70A DO5
товар відсутній
| FR70GR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 70A DO5
Description: DIODE GEN PURP REV 400V 70A DO5
товар відсутній
| FR70JR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 70A DO5
Description: DIODE GEN PURP REV 600V 70A DO5
товар відсутній
| FR70JR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 70A DO5
Description: DIODE GEN PURP REV 600V 70A DO5
товар відсутній
| FR70K05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP 800V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товар відсутній
| FR70KR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP REV 800V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товар відсутній
| FR85BR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 85A DO5
Description: DIODE GEN PURP REV 100V 85A DO5
товар відсутній
| FR85BR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 85A DO5
Description: DIODE GEN PURP REV 100V 85A DO5
товар відсутній
| FR85DR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 85A DO5
Description: DIODE GEN PURP REV 200V 85A DO5
товар відсутній
| FR85DR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 85A DO5
Description: DIODE GEN PURP REV 200V 85A DO5
товар відсутній
| FR85GR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 85A DO5
Description: DIODE GEN PURP REV 400V 85A DO5
товар відсутній
| FR85JR02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP REV 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2171.75 грн |
| FR85JR05 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP REV 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2171.75 грн |
| 10+ | 1807.77 грн |