2N7635-GA GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Power Dissipation (Max): 47W (Tc)
Supplier Device Package: TO-257
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
Description: TRANS SJT 650V 4A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Power Dissipation (Max): 47W (Tc)
Supplier Device Package: TO-257
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
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Технічний опис 2N7635-GA GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO257, Packaging: Bulk, Package / Case: TO-257-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 225°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415mOhm @ 4A, Power Dissipation (Max): 47W (Tc), Supplier Device Package: TO-257, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V.