2N7636-GA GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO276
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-276
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
Description: TRANS SJT 650V 4A TO276
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 225°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-276
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис 2N7636-GA GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO276, Packaging: Bulk, Package / Case: TO-276AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 225°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415mOhm @ 4A, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-276, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V.